Abstract:
본 발명은 하기 식 1의 금속 이온 포착제를 포함하는 것을 특징으로 하는 반도체용 접착 조성물 혹은 반도체용 접착 필름, 및 상기 반도체용 접착 필름에 의해 접속된 반도체 장치에 관한 것이다. [식 1] X (m) Y (n) Z (1-mn) · (H 2 O) p 상기 식 1에서, X, Y 및 Z는 각각 서로 상이하고, Zr, Sn, Mg, Ti, Al, Bi 및 Sb 중 어느 하나, 혹은 상기 금속의 산화물, 탄산염 또는 인산염이며, m 및 n은 서로 독립적으로 0 초과 1 미만의 수이고, 1-mn은 0이 아니며, p는 0 이상의 수이다.
Abstract:
The present invention relates to an epoxy resin composition for sealing a semiconductor device, which comprises an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and a dispersing agent; and to a semiconductor device sealed by using the same, wherein the epoxy resin comprises an epoxy resin expressed as chemical formula 1; the curing agent comprises a curing agent expressed as checmical formula 2; the curing accelerator comprises an imidazole-based curing accelerator; the dispersing agent comprises a dispersing agent having a phosphate ester bond.
Abstract:
PURPOSE: An epoxy resin composition and a semiconductor device using thereof are provided to prevent the curving of the semiconductor device including an asymmetric flat structure, and to improve the fire retardant property, and the reliability of the semiconductor device. CONSTITUTION: An epoxy resin composition for sealing a semiconductor device contains an epoxy resin, a hardener, a curing accelerator, an inorganic filler, and an additive. The epoxy resin is either a polyaromatic epoxy resin marked with chemical formula 1, or a phenol aralkyl type epoxy resin marked with chemical formula 2. The inorganic filler is molten silica in which the content of a particle with the particle diameter more than 53 microns is less than 0.4wt%. The additive is a phenolic antioxidant marked with chemical formula 3.
Abstract:
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자에 관한 것으로, 에폭시수지, 경화제, 경화촉진제, 무기 충전제, 및 커플링제를 포함하는 에폭시 수지 조성물에 있어서, 상기 에폭시수지로 다방향족 에폭시수지와 페놀아랄킬형 에폭시수지를 병용하고, 상기 커플링제로 에폭시계 실란 커플링제와 아미노계 실란 커플링제를 병용함으로써, 패키지의 휨 특성과 신뢰성이 양호하고, 우수한 성형성과 난연성을 갖는 반도체 소자를 제공할 수 있다. 반도체, 에폭시, 다방향족 에폭시수지, 페놀아랄킬형 에폭시수지, 에폭시계 실란 커플링제, 아미노계 실란 커플링제, 휨 특성, 신뢰성, 성형성, 난연성
Abstract:
An epoxy resin composition for encapsulating a semiconductor device is provided to ensure excellent flame retardancy without the use of a halogen-based flame retardant, bending property, moldability and reliability by using an epoxy resin mixed with polyaromatic epoxy resin and phenolaralkyl type epoxy resin. An epoxy resin composition for encapsulating a semiconductor device comprises epoxy resin, curing agent, curing accelerator and inorganic filler. The epoxy resin is a mixture of a polyaromatic epoxy resin indicated as the chemical formula 1 and a phenolaralkyl type epoxy resin indicated as the following chemical formula 2. The inorganic filler is a fused silica of which the content of the particles having a particle diameter of 53 micron or more is 0.3 weight% or less. In the chemical formula 1, R^1-R^10 are independently hydrogen atom or C1-6 alkyl group and the average of m is 1-7. In the chemical formula 2, the average of n is 1-5.
Abstract:
An epoxy resin composition for encapsulating a semiconductor device is provided to realize excellent flame resistance without using a halogen- or phosphor-based flame retardant, to maintain excellent reflow property, and to impart excellent moldability even in a thin package. An epoxy resin composition for encapsulating a semiconductor device comprises 3-15 wt% of an epoxy resin, 0.1-10 wt% of a curing agent, 0.001-1 wt% of a curing accelerator, and 80-93 wt% of an inorganic filler. The epoxy resin is a polyaromatic epoxy resin represented by the following formula 1, wherein R1-R10 are the same or different and represent H or a C1-C6 alkyl, and n has an average of 1-7. The curing agent includes a phenolaralkyl type phenolic resin represented by the following formula 3 and a multi-functional phenolic resin represented by the following formula 4, wherein n has an average of 1-7. The inorganic filler comprises 0.3% or less of particles having a particle diameter of 53 micrometers or higher, and is silica having an average spheronization degree of 0.85 or higher.
Abstract:
PURPOSE: An epoxy resin composition for sealing a semiconductor device is provided to improve reliability of a semiconductor device by improving a composition of an epoxy resin. CONSTITUTION: An epoxy resin composition is formed with a mixture of an ortho-cresol-novolac-based epoxy resin formed by the first chemical reaction formula and a hetero-bi-functional epoxy resin of 3.0 to 12 weight percents formed by the second chemical reaction formula, a hardener of 2.0 to 6.5 weight percents formed by the third chemical reaction formula, an accelerator of 0.1 to 0.3 weight percent, an amine denatured silicon oil of 0.1 to 10 weight percent, an inorganic absorbing agent of 82 to 90 weight percents. A mixed weight ratio of the mixture of the ortho-cresol-novolac-based epoxy resin and the hetero-bi-functional epoxy resin is 2 to 8 or 6 to 4.
Abstract:
PURPOSE: An epoxy resin composition for sealing a semiconductor device is provided to improve stability and reliability by using 2-(demethylaminomethyl)phenol or 2,4,6-tris(demethylaminomethyl)phenol as a hardening catalytic agent. CONSTITUTION: An epoxy resin composition for sealing a semiconductor device comprises an epoxy resin composition using a biphenyl epoxy resin as a necessary component, an ortho-cresol-noblock epoxy resin and a hardening agent of a phenol or a xyloc series. The epoxy resin composition uses not triphenylpospin or an imidazol catalytic agent but 2-(demethylaminomethyl)phenol or 2,4,6-tris(demethylaminomethyl)phenol as a hardening catalytic agent.
Abstract:
본 발명은 이온 포착제로서 화학식 1로 표시되는 고리 화합물을 포함하여 금속 이온과 결합되거나, 금속 이온을 산화 또는 환원시켜 금속의 이동도를 현저히 감소시켜, 반도체 공정 중 또는 공정이 끝난 후 반도체 소자의 작동 효율을 극대화시킬 수 있는 반도체용 접착 조성물 및 이를 이용한 접착 필름을 제공하는 것이다.