-
-
公开(公告)号：KR1020140063327A
公开(公告)日：2014-05-27
申请号：KR1020120130550
申请日：2012-11-16
Applicant: 한국전자통신연구원 , 단국대학교 산학협력단
IPC: H01L29/73 , H01L21/331
Abstract: A horizontal insulated gate bipolar transistor according to an embodiment of the present invention comprises: a first conductive semiconductor substrate; a second conductive drift region formed on the upper part of the first conductive semiconductor substrate; a gate electrode arranged on the first conductive semiconductor substrate; a first emitter electrode which is spaced apart from the gate electrode and is arranged on the first conductive semiconductor substrate to be adjacent to one side surface of the gate electrode; a collector electrode which is spaced apart from the gate electrode and is arranged on a second conductive semiconductor substrate to be adjacent to the other side surface of the gate electrode; a second emitter electrode arranged between the gate electrode and the collector electrode; and a trench insulation film formed between the second emitter electrode and the collector electrode in the second conductive drift region.
Abstract translation: 根据本发明实施例的水平绝缘栅双极晶体管包括：第一导电半导体衬底; 形成在第一导电半导体衬底的上部的第二导电漂移区; 布置在所述第一导电半导体衬底上的栅电极; 第一发射电极，与栅电极间隔开，并配置在第一导电半导体衬底上，与栅电极的一个侧表面相邻; 与所述栅电极间隔开并配置在与所述栅电极的另一侧面相邻的第二导电半导体衬底上的集电极; 布置在栅电极和集电极之间的第二发射极; 以及在第二导电漂移区域中形成在第二发射极和集电极之间的沟槽绝缘膜。
-
公开(公告)号：KR1020140071103A
公开(公告)日：2014-06-11
申请号：KR1020120139074
申请日：2012-12-03
Applicant: 한국전자통신연구원 , 단국대학교 산학협력단
Abstract: A voltage regulator according to an embodiment of the present invention includes a reference voltage generator which generates a reference voltage; an error amplifier which compares and amplifies a difference between the reference voltage and an input voltage; a pass transistor which changes the level of a drive current according to an output voltage which is generated from the error amplifier; and a voltage distributor which distributes the output voltage of the pass transistor and provides the output voltage as an input voltage of the error amplifier. The error amplifier comprises an input end of a rail-to-rail structure which respectively receives the reference voltage and the input voltage by using a pair of NMOS and PMOS transistors; and an output end of a voltage buffer structure for driving a load.
Abstract translation: 根据本发明实施例的电压调节器包括产生参考电压的参考电压发生器; 误差放大器，其比较和放大参考电压和输入电压之间的差; 传输晶体管，其根据从误差放大器产生的输出电压来改变驱动电流的电平; 以及电压分配器，其分配所述通过晶体管的输出电压，并提供所述输出电压作为所述误差放大器的输入电压。 误差放大器包括通过使用一对NMOS和PMOS晶体管分别接收参考电压和输入电压的轨到轨结构的输入端; 以及用于驱动负载的电压缓冲结构的输出端。
-
公开(公告)号：KR1020140071102A
公开(公告)日：2014-06-11
申请号：KR1020120139070
申请日：2012-12-03
Applicant: 한국전자통신연구원 , 단국대학교 산학협력단
CPC classification number: H03F3/45192 , H03F2203/45244 , H03F2203/45508
Abstract: An error amplifier according to an embodiment of the present invention includes an amplifying unit amplifying and outputting the voltage difference between a first signal and a second signal; a first current source providing a bias current for operating the amplifying unit; and a first voltage generation unit generating first and second body voltages by using a body biasing method and providing the first current source of the generated first and second body voltages. The first current source includes first and second PMOS transistors including a cascade connection structure, and the first and second PMOS transistors individually receive the first and second body voltages through a body terminal.
Abstract translation: 根据本发明的实施例的误差放大器包括放大并输出第一信号和第二信号之间的电压差的放大单元; 提供用于操作所述放大单元的偏置电流的第一电流源; 以及第一电压产生单元，其通过使用体偏置方法产生第一和第二体电压，并且提供所产生的第一和第二体电压的第一电流源。 第一电流源包括包括级联连接结构的第一和第二PMOS晶体管，并且第一和第二PMOS晶体管通过主体端子分别接收第一和第二体电压。
-
-
Patent Agency Ranking
公开(公告)号：KR102013226B1
公开(公告)日：2019-08-22
申请号：KR1020120130550
申请日：2012-11-16
Applicant: 한국전자통신연구원 , 단국대학교 산학협력단
IPC: H01L29/739 , H01L29/66 , H01L21/31
-
-
公开(公告)号：KR101374322B1
公开(公告)日：2014-03-17
申请号：KR1020100125025
申请日：2010-12-08
Applicant: 한국전자통신연구원
IPC: H01L21/336 , H01L29/78
Abstract: 반도체 소자의 제조 방법이 제공된다. 반도체 소자의 제조 방법은 제1 도전형의 반도체 기판에 트렌치를 형성하는 것, 트렌치의 측벽 및 바닥면 상에 제2 도전형의 도펀트를 포함하는 트렌치 도펀트 함유막을 형성하는 것, 트렌치 도펀트 함유막 내의 도펀트를 반도체 기판으로 확산시키는 것, 및 트렌치 도펀트 함유막을 제거하는 것을 포함한다.
-
公开(公告)号：KR1020130087777A
公开(公告)日：2013-08-07
申请号：KR1020120008906
申请日：2012-01-30
Applicant: 한국전자통신연구원
CPC classification number: H02J50/00 , H02J5/005 , H02J7/0063 , H02J7/025
Abstract: PURPOSE: An energy storage system which is equipped with a wired and wireless energy transmission function is provided to store and distribute various energies by providing a system for smart grid. CONSTITUTION: An energy input unit (110) inputs energy. An energy wireless transceiver (130) wirelessly transmits and receives the energy. An energy storage/control unit (140) stores the energy. An energy output unit (160) consumes the stored energy. An energy output control unit (150) distributes the stored energy to the energy output unit. [Reference numerals] (110) Energy input unit; (120) Energy input control unit; (130) Energy wireless transmission/receiving unit; (140) Energy storage/control unit; (150) Energy output control unit; (160) Energy output unit
Abstract translation: 目的：提供一种配备有线和无线能量传输功能的能量存储系统，通过提供智能电网系统来存储和分配各种能量。 构成：能量输入单元（110）输入能量。 能量无线收发器（130）无线地传输和接收能量。 能量储存/控制单元（140）存储能量。 能量输出单元（160）消耗存储的能量。 能量输出控制单元（150）将存储的能量分配到能量输出单元。 （附图标记）（110）能量输入单元; （120）能量输入控制单元; （130）能量无线发射/接收单元; （140）储能/控制单元; （150）能量输出控制单元; （160）能量输出单元
-
公开(公告)号：KR1020120091981A
公开(公告)日：2012-08-20
申请号：KR1020110068818
申请日：2011-07-12
Applicant: 한국전자통신연구원
IPC: G01N27/407 , G01N27/26
Abstract: PURPOSE: A MEMS(Micro Electro Mechanical Systems) type semiconductive gas sensor using a micro heater having a plurality of holes and a method for manufacturing the same are provided to obtained a MEMS semiconductive gas sensor which is structural/mechanically/electrically stable, thereby extending a lifetime of the sensor. CONSTITUTION: A MEMS(Micro Electro Mechanical Systems) type semiconductive gas sensor using a micro heater having a plurality of holes comprises a substrate(110), a second membrane(120), a heating resistant(130), a first membrane(140), a sensing electrode(150), and a sensing material(160). A predetermined thickness of the central part of the substrate is etched. The second membrane is formed in the upper part of the central part of the substrate and comprises a plurality of holes. The heating resistant is formed in the second membrane and comprises a plurality of holes. The first membrane is formed on the second membrane and comprises a plurality of holes. The sensing electrode is formed in the first membrane and comprises a plurality of holes. The sensing material is formed in the sensing electrode.
Abstract translation: 目的：提供一种使用具有多个孔的微加热器的MEMS（微机电系统）型半导体气体传感器及其制造方法，以获得结构/机械/电气稳定的MEMS半导体气体传感器，由此延伸 一生的传感器。 构成：使用具有多个孔的微加热器的MEMS（微机电系统）型半导体气体传感器包括基底（110），第二膜（120），耐热（130），第一膜（140） ，感测电极（150）和感测材料（160）。 蚀刻基板中心部分的预定厚度。 第二膜形成在基板的中心部分的上部，并且包括多个孔。 耐热性形成在第二膜中并且包括多个孔。 第一膜形成在第二膜上并且包括多个孔。 感测电极形成在第一膜中并且包括多个孔。 感测材料形成在感测电极中。
-
-
-
-
-
-
-
-
-
Search Results
494
records
(took 0.027 seconds)
