公开(公告)号：KR1020120127070A

公开(公告)日：2012-11-21

申请号：KR1020110045303

申请日：2011-05-13

Applicant: 한국화학연구원

Inventor： 이선숙 ,  정민욱 ,  박보근 ,  정석종 ,  이영국 ,  정택모 ,  김창균 ,  안기석 ,  신용숙 ,  정대성

IPC: C01B31/02 ,  H01B1/04 ,  H01L21/20 ,  C23C16/26

CPC classification number: C01B32/194 ,  C01B2204/22 ,  C23C16/26 ,  H01B1/04 ,  H01L21/2026

Abstract: PURPOSE: Graphene and a manufacturing method of the same, a semiconductor device using the same, and a manufacturing method of the semiconductor are provided to control the electric characteristic of the graphene by generating the structural change of the graphene. CONSTITUTION: A manufacturing method of graphene controls the electric characteristic of graphene(104) by generating the structural change of the graphene. The structural change of the graphene is generated by doping nitrogen into the graphene based on nitrogen plasma treatment. The structural change of the graphene controls the electric characteristic of the graphene based on conductivity. The conductivity is controlled by the power of nitrogen plasma, the flux of nitrogen, the generating pressure of the nitrogen plasma, and the contact time of the nitrogen plasma and the graphene.

Abstract translation: 目的：提供石墨烯及其制造方法，使用该方法的半导体装置和半导体的制造方法，以通过产生石墨烯的结构变化来控制石墨烯的电特性。 构成：石墨烯的制造方法通过产生石墨烯的结构变化来控制石墨烯（104）的电特性。 石墨烯的结构变化是通过基于氮等离子体处理将氮掺杂到石墨烯中而产生的。 石墨烯的结构变化基于导电性控制石墨烯的电特性。 电导率由氮等离子体的功率，氮通量，氮等离子体的产生压力以及氮等离子体和石墨烯的接触时间来控制。

公开(公告)号：KR101174670B1

公开(公告)日：2012-08-17

申请号：KR1020110045313

申请日：2011-05-13

Applicant: 한국화학연구원

Inventor： 이선숙 ,  정대성 ,  안기석 ,  박보근 ,  이영국 ,  김창균 ,  정택모 ,  신용숙 ,  정석종

IPC: H01L21/027 ,  H01L29/786

CPC classification number: H01L21/0273 ,  H01L21/0274 ,  H01L29/786 ,  H01L29/78606

Abstract: PURPOSE: A method for manufacturing a patterned graphene applied to a graphene based device is provided to manufacture a single-multilayered graphene with a desirable pattern by using a patterned metal catalyst layer. CONSTITUTION: A substrate is prepared. A mask is fixed to the substrate. A patterned metal catalyst layer is formed on the substrate. A graphene layer is grown on the metal catalyst layer. The grown graphene layer is transferred to the insulation layer.

Abstract translation: 目的：提供一种用于制造施加到基于石墨烯的器件的图案化石墨烯的方法，以通过使用图案化的金属催化剂层制造具有所需图案的单层多层石墨烯。 构成：制备底物。 掩模固定在基板上。 在基板上形成图案化的金属催化剂层。 在金属催化剂层上生长石墨烯层。 生长的石墨烯层被转移到绝缘层。