公开(公告)号：DE69601981D1

公开(公告)日：1999-05-12

申请号：DE69601981

申请日：1996-01-17

Applicant: ABB RESEARCH LTD

Inventor： HERMANSSON WILLY ,  RAMBERG LENNART ,  SIGURD DAG

IPC: H01L29/73 ,  H01L21/04 ,  H01L21/265 ,  H01L21/331 ,  H01L21/76 ,  H01L29/12 ,  H01L29/16 ,  H01L29/24 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H01L21/266

Abstract: PCT No. PCT/SE96/00034 Sec. 371 Date Mar. 5, 1997 Sec. 102(e) Date Mar. 5, 1997 PCT Filed Jan. 17, 1996 PCT Pub. No. WO96/22610 PCT Pub. Date Jul. 25, 1996The invention relates to a method in which proton or ion implantation is used for restructuring a silicon carbide region from being conductive to being resistive and wherein this implantation method is used for manufacturing a semiconductor device which comprises a p-n junction where both the p-conductive and the n-conductive layers are designed as doped layers of silicon carbide (SiC), whereby the implantation method is used for at least one of the steps passivation of a silicon carbide surface of the device with a semi-insulating layer, definition of the area of the p-n junction during manufacture, termination of the edges of the p-n junction by means of a semi-insulating layer, creation of a positive edge angle at the edge of the p-n junction, and insulation of different devices from one another during manufacture of a plurality of devices on one and the same wafer of silicon carbide, wherein the invention also relates to the implantation method proper.

公开(公告)号：SE9500146D0

公开(公告)日：1995-01-18

申请号：SE9500146

申请日：1995-01-18

Applicant: ABB RESEARCH LTD

Inventor： RAMBERG LENNART ,  SIGURD DAG ,  HERMANSSON WILLY

IPC: H01L29/73 ,  H01L21/04 ,  H01L21/265 ,  H01L21/331 ,  H01L21/76 ,  H01L29/12 ,  H01L29/16 ,  H01L29/24 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861

Abstract: PCT No. PCT/SE96/00034 Sec. 371 Date Mar. 5, 1997 Sec. 102(e) Date Mar. 5, 1997 PCT Filed Jan. 17, 1996 PCT Pub. No. WO96/22610 PCT Pub. Date Jul. 25, 1996The invention relates to a method in which proton or ion implantation is used for restructuring a silicon carbide region from being conductive to being resistive and wherein this implantation method is used for manufacturing a semiconductor device which comprises a p-n junction where both the p-conductive and the n-conductive layers are designed as doped layers of silicon carbide (SiC), whereby the implantation method is used for at least one of the steps passivation of a silicon carbide surface of the device with a semi-insulating layer, definition of the area of the p-n junction during manufacture, termination of the edges of the p-n junction by means of a semi-insulating layer, creation of a positive edge angle at the edge of the p-n junction, and insulation of different devices from one another during manufacture of a plurality of devices on one and the same wafer of silicon carbide, wherein the invention also relates to the implantation method proper.

公开(公告)号：DE69601981T2

公开(公告)日：1999-12-02

申请号：DE69601981

申请日：1996-01-17

Applicant: ABB RESEARCH LTD

Inventor： HERMANSSON WILLY ,  RAMBERG LENNART ,  SIGURD DAG

IPC: H01L29/73 ,  H01L21/04 ,  H01L21/265 ,  H01L21/331 ,  H01L21/76 ,  H01L29/12 ,  H01L29/16 ,  H01L29/24 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H01L21/266

Abstract: PCT No. PCT/SE96/00034 Sec. 371 Date Mar. 5, 1997 Sec. 102(e) Date Mar. 5, 1997 PCT Filed Jan. 17, 1996 PCT Pub. No. WO96/22610 PCT Pub. Date Jul. 25, 1996The invention relates to a method in which proton or ion implantation is used for restructuring a silicon carbide region from being conductive to being resistive and wherein this implantation method is used for manufacturing a semiconductor device which comprises a p-n junction where both the p-conductive and the n-conductive layers are designed as doped layers of silicon carbide (SiC), whereby the implantation method is used for at least one of the steps passivation of a silicon carbide surface of the device with a semi-insulating layer, definition of the area of the p-n junction during manufacture, termination of the edges of the p-n junction by means of a semi-insulating layer, creation of a positive edge angle at the edge of the p-n junction, and insulation of different devices from one another during manufacture of a plurality of devices on one and the same wafer of silicon carbide, wherein the invention also relates to the implantation method proper.

公开(公告)号：SE9700141D0

公开(公告)日：1997-01-20

申请号：SE9700141

申请日：1997-01-20

Applicant: ABB RESEARCH LTD

Inventor： HERMANSSON WILLY ,  BIJLENGA BO ,  RAMBERG LENNART ,  ROTTNER KURT ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  SCHOENER ADOLF ,  LUNDBERG NILS ,  OESTLING MIKAEL ,  DAHLQUIST FANNY

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/872 ,  H01L