公开(公告)号：WO2010048139A3

公开(公告)日：2010-07-29

申请号：PCT/US2009061263

申请日：2009-10-20

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY A ,  BENAC BRIAN ,  BOGGS KARL E ,  FENG LIN ,  LIU JUN ,  PETRUSKA MELISSA A ,  YAN XIAODONG ,  ZHANG PENG

Inventor： BARNES JEFFREY A ,  BENAC BRIAN ,  BOGGS KARL E ,  FENG LIN ,  LIU JUN ,  PETRUSKA MELISSA A ,  YAN XIAODONG ,  ZHANG PENG

IPC: C11D1/62

CPC classification number: C11D3/0073 ,  B08B3/08 ,  C11D1/72 ,  C11D3/042 ,  C11D3/2096 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和方法，用于清洁来自其上具有所述残留物和污染物的微电子装置的化学机械抛光（CMP）残留物和污染物。 清洁组合物包含新颖的腐蚀抑制剂。 该组合物实现了对微电子器件表面上的CMP后残留物和污染物质的高效清洁，而不损害低k介电材料或铜互连材料。

公开(公告)号：SG173621A1

公开(公告)日：2011-09-29

申请号：SG2011057536

申请日：2009-08-12

Applicant: ADVANCED TECH MATERIALS

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER W KARL ,  TANG YING

Abstract: Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

公开(公告)号：SG188150A1

公开(公告)日：2013-03-28

申请号：SG2013010889

申请日：2009-02-11

Applicant: ADVANCED TECH MATERIALS ,  SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Abstract: ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMSCleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.[ No Suitable Figure ]

公开(公告)号：EP2248153A4

公开(公告)日：2012-01-18

申请号：EP09709805

申请日：2009-02-11

Applicant: SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING ,  ADVANCED TECH MATERIALS

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

IPC: H01L21/265 ,  C23C16/44 ,  C23G5/00 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J37/317

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22