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    METROLOGY METHOD, TARGET AND SUBSTRATE
    1.
    发明申请
    METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
    计量学方法，目标和基底

    公开(公告)号：WO2016030255A3

    公开(公告)日：2016-03-03

    申请号：PCT/EP2015/069062

    申请日：2015-08-19

    Applicant: ASML NETHERLANDS B.V.

    Inventor： BHATTACHARYYA, Kaustuve ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  FOUQUET, Christophe, David ,  SMILDE, Hendrik, Jan, Hidde ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie, Jeffrey ,  VAN HAREN, Richard, Johannes, Franciscus ,  LIU, Xing Lan ,  BELTMAN, Johannes, Marcus, Maria ,  FUCHS, Andreas ,  ADAM, Omer, Abubaker, Omer ,  KUBIS, Michael ,  JAK, Martin, Jacobus, Johan

    IPC: G03F7/20

    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. A method of devising such a measurement target involving locating an assist feature at a periphery of the sub-targets, the assist feature being configured to reduce measured intensity peaks at the periphery of the sub-targets.

    Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标均包括一对周期性结构，以及 第一子目标具有与第二子目标不同的设计，包括第一子目标周期性结构的不同设计具有与第二子目标周期性结构不同的间距，特征宽度，空间宽度和/或分段 或（2）第一和第二子目标分别在第一层中包括第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下的第二层中的第一周期性结构的下方，并且存在 在第二层中的第二周期性结构下方没有周期性结构，并且第四周期性结构至少部分地位于第二层下方的第三层中的第二周期性结构下方。 一种设计这种测量目标的方法涉及在辅助目标的外围定位辅助特征，辅助特征被配置为减少在辅助目标的外围处测量的强度峰值。

    METHOD OF MEASURING ASYMMETRY, INSPECTION APPARATUS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD
    4.
    发明申请
    METHOD OF MEASURING ASYMMETRY, INSPECTION APPARATUS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD 审中-公开
    测量不对称的方法，检查装置，光刻系统和器件制造方法

    公开(公告)号：WO2016096524A1

    公开(公告)日：2016-06-23

    申请号：PCT/EP2015/078915

    申请日：2015-12-08

    Applicant: ASML NETHERLANDS B.V.

    Inventor： FUCHS, Andreas ,  WARDENIER, Peter, Hanzen ,  SINGH, Amandev ,  D'ALFONSO, Maxime ,  BOS, Hilko, Dirk

    IPC: G03F7/20

    CPC classification number: G06T7/0004 ,  G03F7/70633 ,  G03F7/70941 ,  G06T7/11 ,  G06T2207/30148

    Abstract: A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and -1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive Intensity defects due to stray light (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly wafer (process) dependent opposite. Calibration measurements (CM1-CM4) are made on a few representative target gratings having biases (+d, –d). The calibration measurements are made, using not only different wafer rotation (RZ = 0, π ) but also complementary apertures (13N, 13S). Corrections (δ, G) are calculated and applied calculate corrected asymmetry A', to reduce error caused by stray light.

    Abstract translation: 在暗场成像模式中使用散射仪来测量不对称相关参数，如覆盖。 使用相同的光路进行小光栅靶的测量，其中目标在两个取向中以获得+1和-1衍射级的单独测量。 以这种方式，避免了强度缩放差异（工具不对称）。 然而，由于光学系统中的杂散光（重影）引起的附加强度缺陷是无法避免的。 添加强度问题很大程度上取决于第0级和第1级衍射之间的比例，因此强晶片（工艺）依赖相反。 校准测量（CM1-CM4）在具有偏差（+ d，-d）的几个代表性目标光栅上进行。 进行校准测量，不仅使用不同的晶片旋转（RZ = 0，π），而且使用互补孔（13N，13S）。 校正（δ，G）被计算并应用计算校正不对称A'，以减少由杂散光引起的误差。

    METHOD AND APPARATUS FOR DETERMINING AN OVERLAY ERROR
    5.
    发明申请
    METHOD AND APPARATUS FOR DETERMINING AN OVERLAY ERROR 审中-公开
    用于确定重叠错误的方法和装置

    公开(公告)号：WO2012010458A1

    公开(公告)日：2012-01-26

    申请号：PCT/EP2011/061822

    申请日：2011-07-12

    Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

    Inventor： VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

    IPC: G03F7/20

    CPC classification number: A01H1/06 ,  A01G22/00 ,  C12N15/8201 ,  G03B27/52 ,  G03B27/53 ,  G03F7/705 ,  G03F7/70633

    Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p (n'), p (n'') and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

    Abstract translation: 确定重叠错误的方法。 测量具有过程引起的不对称性的覆盖目标。 构建目标模型。 修改模型，例如通过移动结构之一来补偿不对称性。 使用修改的模型计算不对称引起的覆盖误差。 通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。 在一个示例中，通过改变不对称p（n'），p（n“）修改模型，并且对于多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定叠加误差的步骤 生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

    APPARATUS AND METHOD FOR INSPECTING A SUBSTRATE
    6.
    发明申请
    APPARATUS AND METHOD FOR INSPECTING A SUBSTRATE 审中-公开
    检测基板的装置和方法

    公开(公告)号：WO2009150089A1

    公开(公告)日：2009-12-17

    申请号：PCT/EP2009/056844

    申请日：2009-06-04

    Applicant: ASML NETHERLANDS B.V. ,  FUCHS, Andreas ,  VAN DER SCHAAR, Maurits

    Inventor： FUCHS, Andreas ,  VAN DER SCHAAR, Maurits

    IPC: G03F7/20

    CPC classification number: G03F7/70633

    Abstract: An apparatus measures properties, such as overlay error, of a substrate divided into a plurality of fields. The apparatus includes a radiation source configured to direct radiation onto a first target of each field of the substrate. Each first target (T4G) has at least a first grating and a second grating having respective predetermined offsets, the predetermined offset (+d) of the first grating being in a direction opposite the predetermined offset (-d) of the second grating. A detector is configured to detect the radiation reflected from each first target and to obtain an asymmetry value for each first target from the detected radiation. Further, a module is configured to determine an overlay value for each first target based on at least the obtained asymmetry value and the predetermined offsets and determine a polynomial fit across a plurality of first targets of a corresponding plurality of fields of the substrate for a relationship between the obtained asymmetry value and determined overlay value of each first target.

    Abstract translation: 一种装置测量分成多个场的衬底的性质，例如重叠误差。 该装置包括被配置为将辐射引导到衬底的每个场的第一靶上的辐射源。 每个第一目标（T4G）具有至少第一光栅和具有相应预定偏移的第二光栅，第一光栅的预定偏移（+ d）在与第二光栅的预定偏移（-d）相反的方向上。 检测器被配置为检测从每个第一目标反射的辐射，并且从检测到的辐射获得每个第一目标的不对称值。 此外，模块被配置为基于至少所获得的不对称值和预定偏移量来确定每个第一目标的覆盖值，并且确定跨越衬底的相应多个场的多个第一目标的多项式拟合，以获得关系 在获得的不对称值和确定的每个第一目标的覆盖值之间。

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