公开(公告)号：WO2017067748A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/072852

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  MOS, Everhardus, Cornelis ,  TEN BERGE, Peter ,  WARDENIER, Peter, Hanzen ,  JENSEN, Erik ,  CEKLI, Hakki, Ergun

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705

Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining, by a computer system, a patterning error offset for use with the modification apparatus based on the determined nonlinearity.

Abstract translation: 一种方法，包括：获得关于涉及图案形成装置的图案化过程中的图案化错误的信息; 根据所述图案误差信息，通过修改装置修改所述图案误差引入的一段时间内确定非线性度; 以及由计算机系统基于所确定的非线性确定供修改装置使用的图案化误差偏移。

公开(公告)号：WO2017067757A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/072960

申请日：2016-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  SLOTBOOM, Daan, Maurits ,  VAN HAREN, Richard, Johannes, Franciscus ,  WARDENIER, Peter, Hanzen

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72

Abstract: A method including: determining first error information (1310) based on a first measurement and/or simulation result (1300) pertaining to a first patterning device in a patterning system; determining second error information (1330) based on a second measurement and/or simulation result (1320) pertaining to a second patterning device in the patterning system; determining (1340) a difference between the first error information and the second error information; and creating, by a computer system, modification information (1360) for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.

Abstract translation: 一种方法，包括：基于与图案化系统中的第一图案形成装置有关的第一测量和/或模拟结果（1300）来确定第一误差信息（1310） 基于与图案化系统中的第二图案形成装置有关的第二测量和/或模拟结果（1320）确定第二误差信息（1330） 确定（1340）第一错误信息和第二错误信息之间的差异; 以及由计算机系统基于所述第一错误信息和所述第二错误信息之间的差异来创建用于所述第一图案形成装置和/或所述第二图案形成装置的修改信息（1360），其中所述第一错误信息与所述第二错误信息 根据修改信息修改第一图案形成装置和/或第二图案形成装置之后，将第二误差信息减小到一定范围内。

公开(公告)号：WO2016202674A1

公开(公告)日：2016-12-22

申请号：PCT/EP2016/063145

申请日：2016-06-17

Applicant: ASML NETHERLANDS B.V.

Inventor： WARDENIER, Peter, Hanzen ,  STAALS, Frank ,  VAESSEN, Jean-Pierre, Agnes, Henricus, Marie ,  VAN DER LAAN, Hans

IPC: G03F7/20

CPC classification number: G03F7/70591 ,  G01B11/03 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.

Abstract translation: 公开了一种在使用定义测量场的测量辐射测量目标之后，确定从包括多个周期性结构的目标衍射的辐射的测量值的校正的方法。 该校正用于校正测量值中的测量场位置依赖性。 该方法包括执行周期性结构的第一和第二测量; 以及从所述第一测量和所述第二测量确定校正。 执行第一测量，其中所述目标相对于测量场处于正常测量位置。 相对于测量场，位移位置中的周期性结构执行第二测量，当所述目标相对于测量场在所述正常测量位置时，所述偏移位置包括另一个所述周期性结构的位置。

公开(公告)号：WO2018141450A1

公开(公告)日：2018-08-09

申请号：PCT/EP2017/082547

申请日：2017-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  DECKERS, David, Frans, Simon ,  WARDENIER, Peter, Hanzen

IPC: G03F7/20 ,  G03F1/72

Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.

公开(公告)号：WO2017067765A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/073084

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  MOS, Everhardus, Cornelis ,  VAN HAREN, Richard, Johannes, Franciscus ,  WARDENIER, Peter, Hanzen ,  JENSEN, Erik ,  KASTRUP, Bernardo ,  KUBIS, Michael ,  MULKENS, Johannes, Catharinus, Hubertus ,  DECKERS, David, Frans, Simon ,  HENKE, Wolfgang, Helmut ,  LEE, Joungchel

IPC: G03F7/20

CPC classification number: G03F1/72 ,  G03F7/70425 ,  G03F7/70625

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

Abstract translation: 一种方法，包括：在由图案化系统的蚀刻工具处理之后获得图案的测量和/或模拟结果，基于所述测量结果确定由于蚀刻加载效应引起的图案化误差和/ 或模拟结果，并且由计算机系统基于图案化误差来创建用于修改图案形成装置和/或用于从蚀刻工具向上游调整图案化系统中的修改装置的修改信息，其中图案化错误被转换为 当根据修改信息修改图案形成装置和/或根据修改信息调整修改装置时，可校正的误差和/或减小到一定范围。

公开(公告)号：WO2016096524A1

公开(公告)日：2016-06-23

申请号：PCT/EP2015/078915

申请日：2015-12-08

Applicant: ASML NETHERLANDS B.V.

Inventor： FUCHS, Andreas ,  WARDENIER, Peter, Hanzen ,  SINGH, Amandev ,  D'ALFONSO, Maxime ,  BOS, Hilko, Dirk

IPC: G03F7/20

CPC classification number: G06T7/0004 ,  G03F7/70633 ,  G03F7/70941 ,  G06T7/11 ,  G06T2207/30148

Abstract: A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and -1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive Intensity defects due to stray light (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly wafer (process) dependent opposite. Calibration measurements (CM1-CM4) are made on a few representative target gratings having biases (+d, –d). The calibration measurements are made, using not only different wafer rotation (RZ = 0, π ) but also complementary apertures (13N, 13S). Corrections (δ, G) are calculated and applied calculate corrected asymmetry A', to reduce error caused by stray light.

Abstract translation: 在暗场成像模式中使用散射仪来测量不对称相关参数，如覆盖。 使用相同的光路进行小光栅靶的测量，其中目标在两个取向中以获得+1和-1衍射级的单独测量。 以这种方式，避免了强度缩放差异（工具不对称）。 然而，由于光学系统中的杂散光（重影）引起的附加强度缺陷是无法避免的。 添加强度问题很大程度上取决于第0级和第1级衍射之间的比例，因此强晶片（工艺）依赖相反。 校准测量（CM1-CM4）在具有偏差（+ d，-d）的几个代表性目标光栅上进行。 进行校准测量，不仅使用不同的晶片旋转（RZ = 0，π），而且使用互补孔（13N，13S）。 校正（δ，G）被计算并应用计算校正不对称A'，以减少由杂散光引起的误差。

公开(公告)号：WO2017067752A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/072873

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  MOS, Everhardus, Cornelis ,  VAN HAREN, Richard, Johannes, Franciscus ,  WARDENIER, Peter, Hanzen ,  JENSEN, Erik

IPC: G03F1/70 ,  G03F1/72

CPC classification number: G03F1/70 ,  G03F1/72

Abstract: A method including modelling, by a computer system, a high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modelling, by the computer system, a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining, by the computer system, modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.

Abstract translation: 一种方法，包括由计算机系统对使用误差数学模型的图案化系统中的图案形成装置进行构图的过程的高分辨率图案化误差信息建模，由计算机系统对 使用校正数学模型校正图案形成装置修改工具可以进行的图案化误差，校正数学模型具有与误差数学模型基本相同的分辨率，并且由计算机系统确定用于修改图案化的修改信息 装置使用图案形成装置修改工具，通过将校正数学模型应用于由误差数学模型建模的图案形成误差信息。

公开(公告)号：WO2016162228A1

公开(公告)日：2016-10-13

申请号：PCT/EP2016/056662

申请日：2016-03-24

Applicant: ASML NETHERLANDS B.V.

Inventor： WILLEMS, Lotte, Marloes ,  BHATTACHARYYA, Kaustuve ,  BINTEVINOS, Panagiotis, Pieter ,  CHEN, Guangqing ,  EBERT, Martin ,  KNELISSEN, Pieter, Jacob, Mathias, Hendrik ,  MORGAN, Stephen ,  VAN DER SCHAAR, Maurits ,  VERSTAPPEN, Leonardus, Henricus, Marie ,  WANG, Jen-Shiang ,  WARDENIER, Peter, Hanzen

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7046 ,  G06F2217/16

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

Abstract translation: 一种方法，包括执行模拟以评估用于测量度量目标的多个度量目标和/或多个计量学方案，从所评估的多个度量目标和/或计量学中识别一个或多个测量目标和/或计量配方 接收所述一个或多个识别的度量目标和/或度量配方的测量数据，以及使用所述测量数据来调整度量目标参数或度量配方参数。