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公开(公告)号：WO2021224009A1
公开(公告)日：2021-11-11
申请号：PCT/EP2021/060403
申请日：2021-04-21
Applicant: ASML NETHERLANDS B.V.
Inventor： ZWIER, Olger, Victor , VAN DER SCHAAR, Maurits , BOS, Hilko, Dirk , VAN DER LAAN, Hans , AL ARIF, S. M. Masudur Rahman , VAN BUEL, Henricus, Wilhelmus, Maria , KOOLEN, Armand, Eugene, Albert , CALADO, Victor, Emanuel , BHATTACHARYYA, Kaustuve , LIAN, Jin , GOORDEN, Sebastianus, Adrianus , LIM, Hui Quan
Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
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公开(公告)号：WO2019081211A1
公开(公告)日：2019-05-02
申请号：PCT/EP2018/077594
申请日：2018-10-10
Applicant: ASML NETHERLANDS B.V.
Inventor： ZHOU, Zili , VAN DER ZOUW, Gerbrand , PANDEY, Nitesh , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria , VAN WEERT, Martinus, Hubertus, Maria , TSIATMAS, Anagnostis , TARABRIN, Sergey , BOS, Hilko, Dirk
Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.
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Patent Agency Ranking
公开(公告)号：WO2021005067A1
公开(公告)日：2021-01-14
申请号：PCT/EP2020/069139
申请日：2020-07-07
Applicant: ASML NETHERLANDS B.V.
Inventor： JAVAHERI, Narjes , VAN DER SCHAAR, Maurits , CHANG, Tieh-Ming , BOS, Hilko, Dirk , WARNAAR, Patrick , BAHRAMI, Samira , HAJIAHMADI, Mohammadreza , TARABRIN, Sergey , SEMKIV, Mykhailo
Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.
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4.发明申请METHOD OF MEASURING ASYMMETRY, INSPECTION APPARATUS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD 审中-公开测量不对称的方法，检查装置，光刻系统和器件制造方法
公开(公告)号：WO2016096524A1
公开(公告)日：2016-06-23
申请号：PCT/EP2015/078915
申请日：2015-12-08
Applicant: ASML NETHERLANDS B.V.
Inventor： FUCHS, Andreas , WARDENIER, Peter, Hanzen , SINGH, Amandev , D'ALFONSO, Maxime , BOS, Hilko, Dirk
IPC: G03F7/20
CPC classification number: G06T7/0004 , G03F7/70633 , G03F7/70941 , G06T7/11 , G06T2207/30148
Abstract: A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and -1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive Intensity defects due to stray light (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly wafer (process) dependent opposite. Calibration measurements (CM1-CM4) are made on a few representative target gratings having biases (+d, –d). The calibration measurements are made, using not only different wafer rotation (RZ = 0, π ) but also complementary apertures (13N, 13S). Corrections (δ, G) are calculated and applied calculate corrected asymmetry A', to reduce error caused by stray light.
Abstract translation: 在暗场成像模式中使用散射仪来测量不对称相关参数，如覆盖。 使用相同的光路进行小光栅靶的测量，其中目标在两个取向中以获得+1和-1衍射级的单独测量。 以这种方式，避免了强度缩放差异（工具不对称）。 然而，由于光学系统中的杂散光（重影）引起的附加强度缺陷是无法避免的。 添加强度问题很大程度上取决于第0级和第1级衍射之间的比例，因此强晶片（工艺）依赖相反。 校准测量（CM1-CM4）在具有偏差（+ d，-d）的几个代表性目标光栅上进行。 进行校准测量，不仅使用不同的晶片旋转（RZ = 0，π），而且使用互补孔（13N，13S）。 校正（δ，G）被计算并应用计算校正不对称A'，以减少由杂散光引起的误差。
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公开(公告)号：WO2020120082A1
公开(公告)日：2020-06-18
申请号：PCT/EP2019/081836
申请日：2019-11-19
Applicant: ASML NETHERLANDS B.V.
Inventor： CRAMER, Hugo, Augustinus, Joseph , BOS, Hilko, Dirk , KOOP, Erik, Johan , KOOLEN, Armand, Eugene, Albert , NIENHUYS, Han-Kwang , POLO, Alessandro , LIAN, Jin , DEN BOEF, Arie, Jeffrey
Abstract: The disclosure relates to measuring a parameter of a lithographic process and a metrology apparatus. In one arrangement, radiation from a radiation source is modified and used to illuminate a target formed on a substrate using the lithographic process. Radiation scattered from a target is detected and analyzing to determine the parameter. The modification of the radiation comprises modifying a wavelength spectrum of the radiation to have a local minimum between a global maximum and a local maximum, wherein the power spectral density of the radiation at the local minimum is less than 20% of the power spectral density of the radiation at the global maximum and the power spectral density of the radiation at the local maximum is at least 50% of the power spectral density of the radiation at the global maximum.
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6.发明申请
公开(公告)号：WO2020088906A1
公开(公告)日：2020-05-07
申请号：PCT/EP2019/077463
申请日：2019-10-10
Applicant: ASML NETHERLANDS B.V.
Inventor： WARNAAR, Patrick , BOS, Hilko, Dirk , SMILDE, Hendrik, Jan, Hidde , HAJIAHMADI, Mohammadreza , MACHT, Lukasz, Jerzy , VAN DEN BOS, Karel, Hendrik, Wouter , SOKOLOV, Sergei , KUNNEMAN, Lucas, Tijn
Abstract: The disclosure relates to determining a value of a parameter of interest of a patterning process. A plurality of calibration data units is obtained from targets in a metrology process. Each of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and a polarization property of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target comprising a structure formed using the patterning process on the substrate or on a further substrate. The value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.
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7.发明公开
公开(公告)号：EP3647871A1
公开(公告)日：2020-05-06
申请号：EP18203837.2
申请日：2018-10-31
Applicant: ASML Netherlands B.V.
Inventor： WARNAAR, Patrick , BOS, Hilko, Dirk , SMILDE, Hendrik, Jan, Hidde , HAJIAHMADI, Mohammadreza
Abstract: The disclosure relates to determining a value of a parameter of interest of a patterning process. A plurality of calibration data units is obtained from targets in a metrology process. Each of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and a polarization property of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target comprising a structure formed using the patterning process on the substrate or on a further substrate. The value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.
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