公开(公告)号：WO2021121871A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/082933

申请日：2020-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： HASAN, Shakeeb Bin ,  GAURY, Benoit, Herve

IPC: G03F7/20 ,  G03F7/70633 ,  G03F7/70658

Abstract: Optically determining whether metallic features in different layers in a structure are in electrical contact with each other is described. When the metallic features comprise different metals and/or have different dimensions, which cause one or more resonances in reflected radiation to be detected, the metallic features in the different layers are determined to be in contact or out of contact with each other based on the spectral positions of the one or more resonances. When the metallic features are formed from the same metal and have the same dimensions, the metallic features in the different layers are determined to be in contact with each other responsive to detection of a single resonance associated with the metallic features and out of contact with each other responsive to detection of two or more resonances associated with the metallic features.

公开(公告)号：WO2022194448A1

公开(公告)日：2022-09-22

申请号：PCT/EP2022/052816

申请日：2022-02-07

Applicant: ASML NETHERLANDS B.V.

Inventor： HASAN, Shakeeb Bin ,  GOOSEN, Maikel, Robert

IPC: G06T5/00 ,  G06T5/10 ,  G06T5/50 ,  H01J37/22 ,  H01J37/28

Abstract: Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image from a first electron beam scan with a parameter being a first quantity; obtaining a second SEM image from a second electron beam scan with the parameter being a second quantity different from the first quantity; and generating a reduced sample charging effect image based on convolution equations comprising a representation of the first SEM image, a representation of the second SEM image, a first point spread function corresponding to the first SEM image and a second point spread function corresponding to the second SEM image.

公开(公告)号：WO2020164951A1

公开(公告)日：2020-08-20

申请号：PCT/EP2020/052662

申请日：2020-02-04

Applicant: ASML NETHERLANDS B.V.

Inventor： HASAN, Shakeeb Bin ,  REN, Yan ,  GOOSEN, Maikel, Robert ,  MANGNUS, Albertus, Victor, Gerardus ,  SMAKMAN, Erwin, Paul

IPC: H01J37/04 ,  H01J37/05 ,  H01J37/26

Abstract: Disclosed among other aspects is a charged particle inspection system including an absorbing component and a programmable charged-particle mirror plate arranged to modify the energy distribution of electrons in a beam and shape the beam to reduce the energy spread of the electrons and aberrations of the beam, with the absorbing component including a structure defining a cavity, the cavity having an interior surface, and a metamaterial aborber provided on the interior surface. In operation, the cavity extends along a part of the beam path. In further embodiments, the metamaterial includes a set of absorbing structures configured as absorbing structures provided on a transparent conductive layer. Further, a method using such an absorbing component and with the programmable charged-particle mirror plate including a set of pixels configured to generate a customized electric field to shape the beam and using such a programmable charged-particle mirror plate is disclosed.

公开(公告)号：WO2022028778A1

公开(公告)日：2022-02-10

申请号：PCT/EP2021/067854

申请日：2021-06-29

Applicant: ASML NETHERLANDS B.V.

Inventor： HASAN, Shakeeb Bin ,  KUMAR, Nitish

IPC: G03F7/20 ,  G01N21/55 ,  G01N21/956

Abstract: The present disclosure relates to a method for determining deviations in a fabrication process, comprising the following steps: a. providing a sample with a layer having a periodic structure fabricated using the fabrication process and intended to cause a corresponding part of the layer to be fully reflective for light having a wavelength in a wavelength range and having an angle of incidence in an angle range; b. illuminating the sample with light having a wavelength in the wavelength range and an angle of incidence in the angle range; c. detecting light reflected and/or scattered from the layer of the sample; and d. determining deviations in the fabrication process from the detected light.

公开(公告)号：WO2022023304A1

公开(公告)日：2022-02-03

申请号：PCT/EP2021/070930

申请日：2021-07-27

Applicant: ASML NETHERLANDS B.V.

Inventor： GAURY, Benoit, Herve ,  LA FONTAINE, Bruno ,  JIANG, Jun ,  HASAN, Shakeeb Bin ,  KANAI, Kenichi ,  VAN RENS, Jasper, Frans, Mathijs ,  TABERY, Cyrus, Emil ,  MA, Long ,  PATTERSON, Oliver, Desmond ,  ZHANG, Jian ,  JEN, Chih-Yu ,  WANG, Yixiang

IPC: H01J37/22 ,  H01J37/244

Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged- particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.

公开(公告)号：WO2021032652A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/072941

申请日：2020-08-15

Applicant: ASML NETHERLANDS B.V.

Inventor： HUISMAN, Thomas, Jarik ,  HASAN, Shakeeb Bin

IPC: H01J37/22 ,  H01J37/28

Abstract: Systems and methods for image enhancement are disclosed. A method for enhancing an image may include acquiring a scanning electron microscopy (SEM) image. The method may also include simulating diffused charge associated with a position of the SEM image. The method may further include providing an enhanced SEM image based on the SEM image and the diffused charge.

公开(公告)号：EP4309113A1

公开(公告)日：2024-01-24

申请号：EP22707632.0

申请日：2022-02-07

Applicant: ASML Netherlands B.V.

Inventor： HASAN, Shakeeb Bin ,  GOOSEN, Maikel, Robert

IPC: G06T5/00 ,  G06T5/10 ,  G06T5/50 ,  H01J37/22 ,  H01J37/28

公开(公告)号：EP4060600A1

公开(公告)日：2022-09-21

申请号：EP21163831.7

申请日：2021-03-19

Applicant: ASML Netherlands B.V.

Inventor： HASAN, Shakeeb Bin ,  GOOSEN, Maikel Robert

IPC: G06T5/00 ,  G06T5/10 ,  G06T5/50 ,  H01J37/22 ,  H01J37/28

Abstract: Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image from a first electron beam scan with a parameter being a first quantity; obtaining a second SEM image from a second electron beam scan with the parameter being a second quantity different from the first quantity; and generating a reduced sample charging effect image based on convolution equations comprising a representation of the first SEM image, a representation of the second SEM image, a first point spread function corresponding to the first SEM image and a second point spread function corresponding to the second SEM image.

公开(公告)号：EP3951500A1

公开(公告)日：2022-02-09

申请号：EP20189673.5

申请日：2020-08-05

Applicant: ASML Netherlands B.V.

Inventor： HASAN, Shakeeb Bin ,  KUMAR, Nitish

IPC: G03F7/20 ,  G01N21/55 ,  G01N21/956

Abstract: The present disclosure relates to a method for determining deviations in a fabrication process, comprising the following steps:
a. providing a sample with a layer having a periodic structure fabricated using the fabrication process and intended to cause a corresponding part of the layer to be fully reflective for light having a wavelength in a wavelength range and having an angle of incidence in an angle range;
b. illuminating the sample with light having a wavelength in the wavelength range and an angle of incidence in the angle range;
c. detecting light reflected and/or scattered from the layer of the sample; and
d. determining deviations in the fabrication process from the detected light.

公开(公告)号：EP3839631A1

公开(公告)日：2021-06-23

申请号：EP19218265.7

申请日：2019-12-19

Applicant: ASML Netherlands B.V.

Inventor： HASAN, Shakeeb Bin ,  GAURY, Benoit, Herve

IPC: G03F7/20

Abstract: Determining relative positions of different layers in a structure is described. A target portion of the structure is irradiated with radiation. The target portion comprises metallic features in the different layers of the structure. One or more resonances in reflected radiation from the metallic features are detected. The relative positions of the different layers are determined based on the detected one or more resonances. In some embodiments, the physical contact between different layers is detected based on one or more resonances. In some embodiments, determining the relative positions of the different layers based on the detected one or more resonances is performed as part of a semiconductor device manufacturing process, where the radiation comprises light, and determining the relative positions of the different layers comprises determining overlay associated with the different layers. In some embodiments, the one or more resonances comprise plasmon resonances or Fano resonances.