Abstract:
An inspection tool for inspecting a semiconductor substrate is described, the inspection tool comprising: - an substrate table configured to hold the substrate; - an electron beam source configured to project an electron beam onto an area of interest of the substrate, the area of interest comprising a buried structure; - a cathodoluminescent detector configured to detect cathodoluminescent light emitted from the buried structure; - a control unit configured to: - control the electron beam source to project to electron beam onto the area of interest; - receive a signal representative of the detected cathodoluminescent light; - determine, based on the signal, a characteristic of the buried structure.
Abstract:
A supercontinuum radiation source for an alignment mark measurement system comprises: a radiation source; illumination optics; a plurality of waveguides; and collection optics. The radiation source is operable to produce a pulsed radiation beam. The illumination optics is arranged to receive the pulsed pump radiation beam and to form a plurality of pulsed sub-beams, each pulsed sub-beam comprising a portion of the pulsed radiation beam. Each of the plurality of waveguides is arranged to receive at least one of the plurality of pulsed sub-beams beam and to broaden a spectrum of that pulsed sub- beam so as to generate a supercontinuum sub-beam. The collection optics is arranged to receive the supercontinuum sub-beam from each of the plurality of waveguides and to combine them so as to form a supercontinuum radiation beam.
Abstract:
Disclosed is a method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method comprises performing the inspection using first inspection radiation obtained from a high harmonic generation source and having one or more first wavelengths within a first wavelength range of between 20nm and 150nm. Also disclosed is a method comprising performing (310) a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing (320) a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, said second wavelength range comprising wavelengths shorter than said first wavelength range.
Abstract:
An inspection tool for inspecting a semiconductor substrate is described, the inspection tool comprising: - a substrate table configured to hold the substrate; - an electron beam source configured to project an electron beam onto an area of interest of the substrate; - a cathode-luminesce detector configured to detect cathodoluminescent light emitted from the area of interest; - a control unit configured to: - receive a signal representative of the detected cathodoluminescent light; - determine, based on the signal, a stress distribution of the area of interest.
Abstract:
An optical system delivers illuminating radiation and collects radiation after interaction with a target structure on a substrate. A measurement intensity profile is used to calculate a measurement of the property of the structure. The optical system may include a solid immersion lens. In a calibration method, the optical system is controlled to obtain a first intensity profile using a first illumination profile and a second intensity profile using a second illumination profile. The profiles are used to derive a correction for mitigating the effect of ghost reflections. Using, e.g., half-moon illumination profiles in different orientations, the method can measure ghost reflections even where a SIL would cause total internal reflection. The optical system may include a contaminant detection system to control a movement based on received scattered detection radiation. The optical system may include an optical component having a dielectric coating to enhance evanescent wave interaction.
Abstract:
Disclosed is an illumination arrangement for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The illumination arrangement comprises a beam dispersing element for dispersing the broadband illumination beam and a spatial light modulator for spatially modulating the broadband illumination beam subsequent to being dispersed. The illumination arrangement further comprises at least one of a beam expanding element for expanding said broadband illumination beam in at least one direction, located between an input of the illumination arrangement and the spatial light modulator; and a lens array, each lens of which for directing a respective wavelength band of the broadband illumination beam subsequent to being dispersed onto a respective region of the spatial light modulator.
Abstract:
Disclosed is a metrology apparatus comprising an optical element configured to receive at or near a pupil plane of the metrology apparatus, at least first radiation comprising a first higher diffracted order and second radiation comprising a zeroth order resulting from illumination of a metrology target with radiation; and to direct said first radiation and second radiation together in a first direction. The metrology apparatus is further configured to form at least a first image of a first interference pattern, the first interference pattern resulting from interference of said first radiation and second radiation at an image plane.
Abstract:
Disclosed is a method and associated inspection apparatus for detecting variations on a surface of a substrate. The method comprises providing patterned inspection radiation to a surface of a substrate. The inspection radiation is patterned such that an amplitude of a corresponding enhanced field is modulated in a manner corresponding to the patterned inspection radiation. The scattered radiation resultant from interaction between the enhanced field and the substrate surface is received and variations on the surface of the substrate are detected based on the interaction between the enhanced field and the substrate surface. Also disclosed is a method of detecting any changes to at least one characteristic of received radiation, the said changes being induced by the generation of a surface plasmon at said surface of the optical element.
Abstract:
The present disclosure relates to a method for determining deviations in a fabrication process, comprising the following steps: a. providing a sample with a layer having a periodic structure fabricated using the fabrication process and intended to cause a corresponding part of the layer to be fully reflective for light having a wavelength in a wavelength range and having an angle of incidence in an angle range; b. illuminating the sample with light having a wavelength in the wavelength range and an angle of incidence in the angle range; c. detecting light reflected and/or scattered from the layer of the sample; and d. determining deviations in the fabrication process from the detected light.
Abstract:
A metrology apparatus uses radiation (304) in an EUV waveband. A first detection system (333) includes a spectroscopic grating (312) and a detector (313) for capturing a spectrum of the EUV radiation after interaction with a target (T). Properties of the target are measured by analyzing the spectrum. The radiation (304) further includes radiation in other wavebands such as VUV, DUV, UV, visible and IR. A second detection system (352, 372, 382) is arranged to receive at least a portion of radiation (350) reflected by the first spectroscopic grating and to capture a spectrum (SA) in one or more of said other wavebands. The second waveband spectrum can be used to enhance accuracy of the measurement based on the EUV spectrum, and/or it can be used for a different measurement. Other types of detection, such as polarization can be used instead or in addition to spectroscopic gratings.