DEVICE MANUFACTURING METHOD, LITHOGRAPHIC APPARATUS AND A COMPUTER PROGRAM
    3.
    发明申请
    DEVICE MANUFACTURING METHOD, LITHOGRAPHIC APPARATUS AND A COMPUTER PROGRAM 审中-公开
    设备制造方法,平面设备和计算机程序

    公开(公告)号:WO2008111839A1

    公开(公告)日:2008-09-18

    申请号:PCT/NL2008/050146

    申请日:2008-03-14

    CPC classification number: G03F7/70725 G03F9/7003 G03F9/7026 G03F9/7034

    Abstract: The invention relates to a device manufacturing method comprising exposing a substrate with a patterned beam of radiation formed by a reticle mounted on a displaceable reticle stage, wherein the method comprises the steps of determining a non-linear function for approximating a height and a tilt profile of a reticle surface with respect to the reticle stage and controlling a displacement of the reticle stage during exposure of the substrate in accordance with the non-linear function. The invention further relates to a lithographic apparatus and a computer program.

    Abstract translation: 本发明涉及一种器件制造方法,包括用安装在可移位标线片平台上的掩模版形成的图案化的辐射束暴露衬底,其中该方法包括以下步骤:确定近似高度和倾斜轮廓的非线性函数 的标线片表面,并且根据非线性函数控制在衬底曝光期间标线片台的位移。 本发明还涉及光刻设备和计算机程序。

    CONTAMINATION MEASUREMENT
    7.
    发明公开

    公开(公告)号:EP4318132A1

    公开(公告)日:2024-02-07

    申请号:EP22188166.7

    申请日:2022-08-01

    Abstract: A method of determining contamination of an optical sensor in a lithographic apparatus, the method comprising illuminating a pattern on a patterning device using EUV radiation, projecting patterned reflected EUV radiation towards the optical sensor and thereby forming an aerial image of the pattern, and moving the optical sensor relative to the patterned reflected EUV radiation such that an intensity of EUV radiation measured by the optical sensor varies as a function of the position of the optical sensor, wherein the intensity measured by the optical sensor passes through a minimum, and wherein the method further comprises using the measured intensity to measure contamination of the optical sensor.

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