中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.024 seconds)

    METHOD FOR REMOVING PHOTOSENSITIVE MATERIAL ON A SUBSTRATE
    1.
    发明申请
    METHOD FOR REMOVING PHOTOSENSITIVE MATERIAL ON A SUBSTRATE 审中-公开
    在衬底上去除光敏材料的方法

    公开(公告)号：WO2017109040A1

    公开(公告)日：2017-06-29

    申请号：PCT/EP2016/082317

    申请日：2016-12-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： BERENDSEN, Christianus, Wilhelmus, Johannes ,  NAKIBOGLU, Günes ,  VAN SOMMEREN, Daan, Daniel, Johannes, Antonius ,  RISPENS, Gijsbert ,  BECKERS, Johan, Franciscus, Maria ,  RENCKENS, Theodorus, Johannes, Antonius

    IPC: G03F7/16 ,  G03F7/20

    CPC classification number: G03F7/2028 ,  G03F7/168

    Abstract: The present invention provides a method of processing a substrate comprising: providing a substrate with a layer of photosensitive material on a surface of the substrate; and removing photosensitive material from around an outer edge of the layer of photosensitive material, and controlling the removing so as to generate an edge, having a radial width, around the layer of photosensitive material remaining on the surface of the substrate, wherein the photosensitive material varies in thickness forming a thickness profile across the radial width and the removing is controlled so as to generate variation in the thickness profile along the length of the edge, and/or wherein the removing is controlled so as to generate a rough edge around the layer of photosensitive material remaining on the surface of the substrate.

    Abstract translation: 本发明提供了一种处理基板的方法，包括：在基板的表面上提供具有光敏材料层的基板; 以及从感光材料层的外边缘周围去除感光材料，并且控制该去除以便在保留在基板表面上的感光材料层周围产生具有径向宽度的边缘，其中感光材料 厚度变化形成横跨径向宽度的厚度轮廓，并且控制去除以沿着边缘的长度产生厚度轮廓的变化，和/或其中控制去除以便围绕层产生粗糙的边缘 的光敏材料留在基片表面上。

    METHOD FOR DEVICE FABRICATION
    3.
    发明申请
    METHOD FOR DEVICE FABRICATION 审中-公开

    公开(公告)号：WO2021094064A1

    公开(公告)日：2021-05-20

    申请号：PCT/EP2020/079510

    申请日：2020-10-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： LIN, Qinghuang ,  RISPENS, Gijsbert

    IPC: G03F7/004 ,  G03F7/26 ,  G03F7/38

    Abstract: The present invention relates to improved methods for fabricating devices, for example integrated circuits, using high-sensitivity extreme ultraviolet (EUV) resist. The present invention also relates to an integrated wafer processing system for carrying out such a method. The method comprises fabricating a device, the method comprising; a. exposing an extreme ultraviolet (EUV) resist wafer to EUV radiation to produce an exposed EUV resist wafer; b. baking the exposed EUV resist wafer in an oxygen-rich atmosphere at a temperature in the range of from about 20 ºC to about 450 ºC; c. processing the exposed EUV resist wafer to produce a device; wherein the oxygen-rich atmosphere comprises oxygen in amount greater than about 21.0% by volume, and wherein the EUV resist comprises one or more of Sn, Sb, Cd, Cr, Zn, Hf, Po, Pd and Te.

    METHODS FOR IMPROVING UNIFORMITY IN SUBSTRATES IN A LITHOGRAPHIC PROCESS
    4.
    发明申请
    METHODS FOR IMPROVING UNIFORMITY IN SUBSTRATES IN A LITHOGRAPHIC PROCESS 审中-公开

    公开(公告)号：WO2021089270A1

    公开(公告)日：2021-05-14

    申请号：PCT/EP2020/078349

    申请日：2020-10-09

    Applicant: ASML NETHERLANDS B.V.

    Inventor： GARCIA SANTACLARA, Jara ,  FINDERS, Jozef, Maria ,  HOEFNAGELS, Henricus, Franciscus ,  RISPENS, Gijsbert

    IPC: G03F7/20

    Abstract: A method of processing a substrate having a metal oxide resist layer formed thereon is provided, the method including the steps of: exposing the substrate to patterning radiation to form a pattern including a plurality of features in the metal oxide resist layer; exposing a portion of the substrate including at least one of said features to conditioning radiation thereby causing shrinkage of the metal oxide resist layer in said portion. Computer programs which cause a computer apparatus to perform the above method and computer program products having such computer programs stored thereon are also provided, as are apparatuses, such as lithographic apparatuses, having a processor adapted to carry out the above method or run the above program. The methods and apparatuses can lead to an improvement in critical dimension uniformity.

    PROCESS WINDOW BASED ON DEFECT PROBABILITY
    5.
    发明申请
    PROCESS WINDOW BASED ON DEFECT PROBABILITY 审中-公开

    公开(公告)号：WO2019121486A1

    公开(公告)日：2019-06-27

    申请号：PCT/EP2018/085159

    申请日：2018-12-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： SLACHTER, Abraham ,  HUNSCHE, Stefan ,  TEL, Wim, Tjibbo ,  VAN OOSTEN, Anton, Bernhard ,  VAN INGEN SCHENAU, Koenraad ,  RISPENS, Gijsbert ,  PETERSON, Brennan

    IPC: G03F7/20

    Abstract: Described herein is a method. The method includes steps for obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

Patent Agency Ranking