Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter
    1.
    发明专利
    Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter 审中-公开
    光谱滤光片,光刻设备和制造光谱滤光片的方法

    公开(公告)号:JP2011014899A

    公开(公告)日:2011-01-20

    申请号:JP2010141165

    申请日:2010-06-22

    Abstract: PROBLEM TO BE SOLVED: To provide an EUV spectral purity filter which is efficient and easy to manufacture without causing any defect associated with silicidation of a reflective coating in a hydrogen radical atmosphere.SOLUTION: A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride SiN, or silicon dioxide SiOis provided between the metal and the semiconductor to prevent diffusion and silicidation of the metal at elevated temperatures.

    Abstract translation: 要解决的问题:提供一种有效且易于制造的EUV光谱纯度过滤器,而不会引起与氢气氛中的反射涂层的硅化相关的任何缺陷。解决方案:透射光谱纯度过滤器被配置为透射极紫外辐射 。 光谱纯度滤光器包括具有多个孔以便透射极紫外辐射并抑制第二类辐射的透射的滤光器部分。 孔可以通过各向异性蚀刻工艺在诸如硅的载体材料中制成,并且覆盖有诸如Mo金属,Ru金属,TiN或RuO的反射层。 在金属和半导体之间设置有诸如氮化硅SiN或二氧化硅SiO 2的扩散阻挡层,以防止金属在升高的温度下扩散和硅化。

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