Abstract:
PROBLEM TO BE SOLVED: To provide a radiation system for generating a beam of radiation that defines an optical axis.SOLUTION: The radiation system comprises a plasma-produced discharge source for generating EUV radiation. The discharge source comprises: a pair of electrodes provided with a voltage difference; and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also comprises a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided at a predetermined spherical angle relative to the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.
Abstract:
PROBLEM TO BE SOLVED: To provide an optical sensor device capable of monitoring the extent of contamination accumulated in an EUV system.SOLUTION: An optical sensor device for use in an extreme ultraviolet ray lithography system comprises an optical sensor including a sensor surface and a removing mechanism for removing debris from the sensor surface. Therefore, measurement of the dose and/or contamination can be accomplished favorably for the lithography system.
Abstract:
PROBLEM TO BE SOLVED: To provide more effective radiation sources by, improving the efficiency of the collector assembly, to reduce the excitation power used to produce radiation, to extend the life of the radiation sources by, and to improve the efficiency of light collection for the EUV radiation. SOLUTION: A collector assembly for use in a laser-produced plasma extreme ultraviolet radiation source for use in lithography has a collector body 40 having a collecting mirror 42 and a window 43 in the collector body 40. The window is transmissive to excitation radiation beam, which may be an infrared laser beam in general, so that the beam passes through the window to excite the plasma, and the window has an EUV mirror on its surface, which is also transmissive to the excitation radiation beam but which reflects EUV generated by the plasma to the light collecting site of the collecting mirror. The window may improve the collection efficiency and reduce non-uniformity in the image at the light collecting site. Radiation sources, lithographic apparatus and device manufacturing methods may make use of the collector. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To prevent damage to a component of a lithography apparatus, in particular, a mirror located nearby a plasma source due to contaminant particles. SOLUTION: The lithography apparatus includes a radiation source which generates extreme ultraviolet radiation. The radiation source includes a chamber in which plasma is generated and the mirror which reflects radiation emitted by the plasma. The mirror includes a multilayer structure including an Mo/Si alternation layer. A border Mo layer or border Si layer or a border diffusion barrier layer of the alternation layer forms an uppermost layer of the mirror, and the uppermost layer faces the chamber inward. A hydrogen group generator generates hydrogen in the chamber. The hydrogen group removes debris, generated from the plasma, from the mirror. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an improved assembly provided with a radiation source, a radiation reflector and a contaminant barrier, particularly, for example, an assembly which can offer improved properties for providing radiation to be employed in EUV lithography. SOLUTION: The contaminant barrier is constructed to receive a radiation from a radiation source and reflect the radiation toward a radiation reflector, and the radiation reflector is constructed to return back the radiation received from the contaminant barrier to reflect toward the contaminant barrier. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an improved or alternative spectral purity filter, or a spectral purity filter arrangement. SOLUTION: This spectral purity filter includes a plurality of apertures extending in a member. The apertures are structured to suppress radiation of a first wavelength and allow at least a part of radiation of a second wavelength to permeate the apertures. The radiation of the second wavelength is shorter than the radiation of the first wavelength. The apertures extend in the member in various directions to be substantially aligned with radiation constituting a non-parallel radiation beam. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an EUV spectral purity filter which is efficient and easy to manufacture without causing any defect associated with silicidation of a reflective coating in a hydrogen radical atmosphere.SOLUTION: A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride SiN, or silicon dioxide SiOis provided between the metal and the semiconductor to prevent diffusion and silicidation of the metal at elevated temperatures.
Abstract:
PROBLEM TO BE SOLVED: To provide a device useful as an improved spectrum impurity filter. SOLUTION: A zone plate includes a plurality of first and second regions which are adjacently and alternately arranged continuously. The first region is structured to be substantially transmissive on a first predetermined radiation wavelength and a second predetermined radiation wavelength different from the first predetermined radiation wavelength. The second region is structured to be substantially non-transmissive, diffractive, or reflective on the first predetermined radiation wavelength, and is substantially transmissive on the second predetermined radiation wavelength. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a lithography apparatus including a radiation source which reduces heat load to buffer gas as well as an amount of infiltration into its collector of the contamination being generated accompanying extreme ultraviolet generation. SOLUTION: The extreme ultraviolet radiation source includes: a radiation emitter which emits the radiation; a collector which collects the radiation; and a contamination trap which traps the contamination emitted from the radiation source. The contamination trap includes: a plurality of foils extending substantially radially; a first magnetic ring located outside the outer cone trajectory of the radiation collected by the collector; and a second magnetic ring located inside the trajectory of the radiation collected by the collector. These magnetic rings provide magnetic field having components parallel to the foils. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a spectral purity filter capable of holding the mechanical robustness of the spectral purity filter and reducing a manufacturing cost. SOLUTION: There is a problem in a conventional spectral purity filter that since the filter is too miniaturized, manufacturing options usable for the preparation of an apertures are restricted and/or expensive. In the spectral purity filter including apertures, the apertures are configured so as to diffract radiation of a first wavelength and transmit at least a part of the radiation of a second wavelength through them, wherein the second radiation wavelength is shorter than the first radiation wavelength and the apertures have a diameter larger than 20 μm. COPYRIGHT: (C)2010,JPO&INPIT