Reducing fast ions in plasma radiation source
    1.
    发明专利
    Reducing fast ions in plasma radiation source 有权
    降低等离子体辐射源中的快速离子

    公开(公告)号:JP2011258990A

    公开(公告)日:2011-12-22

    申请号:JP2011204659

    申请日:2011-09-20

    CPC classification number: H05G2/001 B82Y10/00 G03F7/70033 G03F7/70916

    Abstract: PROBLEM TO BE SOLVED: To reduce fast ions in a plasma radiation source.SOLUTION: The radiation source includes a first activation source to direct a first energy pulse onto a first spot in the radiation source near discharge space to create a main plasma channel which triggers discharge. The radiation source also has a second activation source to direct a second energy pulse onto a second spot in the radiation source near the discharge space to create an additional plasma channel. By directing the second energy pulse during the same discharge, a shortcut of a main plasma current is realized, which can reduce an amount of fast ions to be produced.

    Abstract translation: 要解决的问题:减少等离子体辐射源中的快速离子。 解决方案:辐射源包括第一激活源,以将第一能量脉冲引导到放电空间附近的辐射源中的第一点上,以产生触发放电的主等离子体通道。 辐射源还具有第二激活源,以将第二能量脉冲引导到放电空间附近的辐射源中的第二点上,以产生附加的等离子体通道。 通过在相同放电期间引导第二能量脉冲,实现了主等离子体电流的捷径,这可以减少要产生的快离子的量。 版权所有(C)2012,JPO&INPIT

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