公开(公告)号：JP2008199034A

公开(公告)日：2008-08-28

申请号：JP2008050997

申请日：2008-02-29

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JASPER JOHANNES CHRISTIAAN MAR ,  LOOPSTRA ERIK ROELOF ,  MODDERMAN THEODORUS MARINUS ,  NIJMEIJER GERRIT JOHANNES ,  VAN ASTEN NICOLAAS ANTONIUS A ,  HEUTS FREDERIK THEODORUS E ,  GEMEN JACOBUS ,  DU CROO DE JONGH RICHARD JOHAN ,  BOONMAN MARCUS EMILE JOANNES ,  KLINKHAMER JACOB FREDRIK FRISO ,  CASTENMILLER THOMAS JOSEPHUS M

IPC: G01B9/02 ,  H01L21/027 ,  G01B11/00 ,  G01B11/02 ,  G01B11/245 ,  G01B11/25 ,  G01B11/30 ,  G03F7/20 ,  G03F7/207 ,  G03F7/22 ,  G03F9/00

CPC classification number: G03F9/7026 ,  G03F9/70 ,  G03F9/7034 ,  G03F9/7049 ,  G03F9/7096

Abstract: PROBLEM TO BE SOLVED: To avoid the need to relate the origins of apparatuses which measure heights of substrates or masks on a plurality of stations in a lithographic projection apparatus having a plurality of substrate tables or mask tables. SOLUTION: A substrate W is mounted on a substrate table WT; then, vertical positions of a physical reference surface and vertical positions Z LS of the substrate surface are measured at a plurality of points on a measurement station (at the right of figure 8) using a level sensor 10; simultaneously, vertical positions Z IF of the substrate table are measured at the same points using a Z-interferometer Z IF ; and the substrate surface height, Z Wafer =Z LS +Z IF , is mapped. Then, the substrate table carrying the substrate is moved to an exposure station (to the left of figure 8) and vertical positions of the physical reference surface is again determined. Then, when the substrate is positioned at a right vertical position during the exposure process, the height map is referenced. This process can be applied to a mask. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了避免在具有多个基板台或掩模台的光刻投影设备中将测量基板或掩模高度的设备的起点与多个台站相关联的需要。 解决方案：将衬底W安装在衬底台WT上; 然后使用液位传感器10在测量站（图8右侧）的多个点测量基板表面的物理基准表面和垂直位置Z LS 的垂直位置; 同时，使用Z型干涉仪Z SB，在同一点测量衬底台的垂直位置Z IF ; 并且映射基板表面高度Z Wafer = Z LS + Z IF 。 然后，承载基板的基板台移动到曝光站（图8的左侧），再次确定物理基准面的垂直位置。 然后，当曝光处理期间基板位于右垂直位置时，参考高度图。 该过程可以应用于掩模。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008182270A

公开(公告)日：2008-08-07

申请号：JP2008107079

申请日：2008-04-16

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JASPER JOHANNES CHRISTIAAN MAR ,  BAGGEN MARCEL KOENRAAD MARIE ,  BRULS RICHARD JOSEPH ,  VAN DIJCK HENDRIKUS ALPHONSUS ,  HOFMANS GERARDUS CAROLUS JOHAN ,  JANSEN ALBERT JOHANNES MARIA ,  LUIJTEN CARLO CORNELIS MARIA ,  PONGERS WILLEM RICHARD ,  WEHRENS MARTIJN GERARD DOMINIQ ,  UITTERDIJK TAMMO ,  CICILIA ORLANDO SERAPIO ,  BOOM HERMAN ,  DEMARTEAU MARCEL JOHANNES LOUI

IPC: H01L21/027 ,  G03F1/62 ,  G03F1/64 ,  G03F1/82 ,  G03F7/20

CPC classification number: G03F7/70258 ,  G03F1/62 ,  G03F1/64 ,  G03F1/82 ,  G03F7/70308 ,  G03F7/70983

Abstract: PROBLEM TO BE SOLVED: To provide a lithography projection apparatus and a device manufacturing method, capable of compensating for or improving the effect of a thick pellicle. SOLUTION: The thick pellicle is used to calculate corrections to be applied in exposure so that the thick pellicle is allowed to have a non-flat shape, and the shape compensates for the optical effect of the pellicle. In order for the pellicle to more readily compensate for, to be mounted, in such a manner as to employ a one-dimensional shape under the influence of gravity. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供能够补偿或改善厚薄膜的效果的光刻投影装置和装置制造方法。

解决方案：使用厚的防护薄膜来计算曝光中应用的校正值，使得薄膜组件具有非平坦的形状，并且该形状补偿防护薄膜的光学效果。 为了使防护薄膜组件更容易地在重力的影响下以使其成为一维形状的方式进行补偿。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2005136423A

公开(公告)日：2005-05-26

申请号：JP2004314926

申请日：2004-10-29

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： JASPER JOHANNES CHRISTIAAN MAR

IPC: G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70558 ,  G03F7/70933

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus and a method of manufacturing a device, which allow manufacturing to be more speedily resumed after a time period of a flow rate lower than in a full-flow purge mode.
SOLUTION: In a lithography apparatus using 157nm radiation, after a low-flow purge mode has been used, a projection beam is activated at low intensity and the intensity is monitored at a substrate level. When the intensity at the substrate level indicates that transmission on a beam path is restored to a normal value, it is decided that the resumption of exposure is safe.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：提供一种光刻设备和制造装置的方法，其允许在流量低于全流量吹扫模式的时间段之后更快地恢复制造。 解决方案：在使用157nm辐射的光刻设备中，在使用低流量吹扫模式之后，投影光束以低强度被激活，并且在衬底水平上监测强度。 当基板电平的强度表示光束路径上的透射恢复到正常值时，决定曝光恢复是安全的。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004343102A

公开(公告)日：2004-12-02

申请号：JP2004132528

申请日：2004-04-28

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： JASPER JOHANNES CHRISTIAAN MAR ,  BAGGEN MARCEL KOENRAAD MARIE ,  BRULS RICHARD JOSEPH ,  VAN DIJCK HENDRIKUS ALPHONSUS ,  HOFMANS GERARDUS CAROLUS JOHAN ,  JANSEN ALBERT JOHANNES MARIA ,  LUIJTEN CARLO CORNELIS MARIA ,  PONGERS WILLEM RICHARD ,  WEHRENS MARTIJN GERARD DOMINIQ ,  UITTERDIJK TAMMO ,  CICILIA ORLANDO SERAPIO ,  BOOM HERMAN ,  DEMARTEAU MARCEL JOHANNES LOUI

IPC: G03F1/62 ,  G03F1/64 ,  G03F1/82 ,  G03F7/20 ,  H01L21/027 ,  G03F1/14

CPC classification number: G03F7/70258 ,  G03F1/62 ,  G03F1/64 ,  G03F1/82 ,  G03F7/70308 ,  G03F7/70983

Abstract: PROBLEM TO BE SOLVED: To provide a lithography projection apparatus and a device manufacturing method capable of compensating for or improving the effect of a thick pellicle.
SOLUTION: The thick pellicle is characterized for calculating a correction to be applied in exposure so that the hick pellicle is allowed to have a non-flat shape and the shape compensates for the optical effect of the pellicle. As the pellicle readily compensates for, it can be mounted in such a manner as to employ a one-dimensional shape under the influence of gravity.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2009065222A

公开(公告)日：2009-03-26

申请号：JP2008329497

申请日：2008-12-25

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： JASPER JOHANNES CHRISTIAAN MAR

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/70933

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus and device manufacturing method capable of more quickly resuming production after a period where the flow is smaller than the full flow purge. SOLUTION: The lithographic apparatus using a 157 nm irradiation, wherein a projected beam is activated with low intensity to monitor intensity at a substrate level after a low flow purge mode is used. It is determined safe that exposure is resumed when the intensity at the substrate level indicates that transmission factor on a beam path returns to a normal value. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供能够在流量小于全流量吹扫的时间段之后更快地恢复生产的光刻设备和设备制造方法。 解决方案：使用157nm照射的光刻设备，其中投射光束以低强度被激活以在使用低流量吹扫模式之后监测基底水平的强度。 当基板层的强度表示光束路径上的透射因子恢复到正常值时，确定曝光被恢复。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2004207738A

公开(公告)日：2004-07-22

申请号：JP2003425260

申请日：2003-12-22

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： JANSEN ALBERT JOHANNES MARIA ,  BAGGEN MARCEL KOENRAAD MARIE ,  JASPER JOHANNES CHRISTIAAN MAR ,  SCHRIJVER RAYMOND LAURENTIUS J ,  BRULS RICHARD JOSEPH ,  BASELMANS JOHANNES JACOBUS MAT ,  PONGERS WILLEM RICHARD ,  UITTERDIJK TAMMO

IPC: G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70308 ,  G03F7/70716 ,  G03F7/70983

Abstract: PROBLEM TO BE SOLVED: To provide a lithography projector which reduces the number of man-hours required to exchange a reticle with a pellicle, with a reticle without a pellicle. SOLUTION: In the present projection system, the pattern surface on the reticle is lightened so that a projected image that focuses on an image-forming surface can be obtained. If a pellicle exists in an optical path, a substantial shift occurs in the position of the pattern surface of the reticle. It is necessary to adapt the image-forming surface of the projected image for a proper focus depending on the presence or absence of the pellicle. A corrector moves the position of the pattern surface, thereby the substantial shift of the pattern surface due to the pellicle is removed. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：SG109610A1

公开(公告)日：2005-03-30

申请号：SG200405050

申请日：2004-08-23

Applicant: ASML NETHERLANDS BV

Inventor： LOOPSTRA ERIK ROELOF ,  DIERICHS MARCEL MATHIJS THEODO ,  JASPER JOHANNES CHRISTIAAN MAR ,  MEIJER HENDRICUS JOHANNE MARIA ,  MICKAN UWE ,  MULKENS JOHANNES CATHARINUS HU ,  LIPSON MATTHEW ,  UITTERDIJK TAMMO ,  BASELMANS JOHANNES JACOBUS MAT

IPC: H01L21/027 ,  G02B1/10 ,  G03F7/20

公开(公告)号：SG136134A1

公开(公告)日：2007-10-29

申请号：SG2007066608

申请日：2004-08-23

Applicant: ASML NETHERLANDS BV

Inventor： LOOPSTRA ERIK ROELOF ,  DIERICHS MARCEL MATHIJS THEODO ,  JASPER JOHANNES CHRISTIAAN MAR ,  MEIJER HENDRICUS JOHANNE MARIA ,  MICKAN UWE ,  MULKENS JOHANNES CATHARINUS HU ,  LIPSON MATHEW ,  UITTERDIJK TAMMO ,  BASELMANS JOHANNES JACOBUS MAT

IPC: G03F7/20

Abstract: A lithographic projection apparatus is disclosed for use with an immersion liquid positioned between the final element of the projection system and the substrate W. Several methods are disclosed for protecting components of the projection system, substrate table and a liquid confinement system. These include providing a protective coating on the final element 20 of the projection system as well as providing sacrificial bodies upstream of the components. A two component final optical element of CaF 2 is also disclosed.

公开(公告)号：SG135935A1

公开(公告)日：2007-10-29

申请号：SG2003077260

申请日：2003-12-23

Applicant: ASML NETHERLANDS BV

Inventor： JANSEN ALBERT JOHANNES MARIA ,  BAGGEN MARCEL KOENRAAD MARIE ,  JASPER JOHANNES CHRISTIAAN MAR ,  SCHRIJVER RAYMOND LAURENTIUS J ,  BRULS RICHARD JOSEPH ,  BASELMANS JOHANNES JACOBUS MAT ,  PONGERS WILLEM RICHARD ,  UITTERDIJK TAMMO

IPC: G03F7/20 ,  H01L21/027 ,  G03B27/42

Abstract: In a projection system a pattern plane on a reticle is illuminated to have a projection image focussed on an image plane. The presence of a pellicle in the optical path causes a virtual shift of the position of the pattern plane on the reticle. Depending on the presence or absence of the pellicle the image plane of the projection image needs to be adapted for proper focussing. A compensator counteracts the virtual shift of pattern plane due to the pellicle, by shifting the position of the pattern plane.

公开(公告)号：DE602004000459T2

公开(公告)日：2006-09-28

申请号：DE602004000459

申请日：2004-10-26

Applicant: ASML NETHERLANDS BV

Inventor： JASPER JOHANNES CHRISTIAAN MAR

IPC: G03F7/20 ,  H01L21/027

Abstract: A lithographic apparatus is provided that includes a purging device for purging a part of the apparatus with a purge gas. The purging device is operable in a first mode having a relatively high flow of purge gas and a second mode having a relatively low flow of purge gas. A controller that is constructed and arranged to control an intensity of the beam of radiation, so that the intensity of the beam of radiation can be made lower than a normal intensity in response to a change in mode of a purging device from the second mode to the first mode. The controller is arranged to monitor the downstream intensity of the beam of radiation as measured by a sensor and to prevent generation of radiation at the normal intensity until the downstream intensity of the beam of radiation meets a predetermined criterion.