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    Lithographic apparatus
    1.
    发明专利
    Lithographic apparatus 有权
    LITHOGRAPHIC设备

    公开(公告)号：JP2010004040A

    公开(公告)日：2010-01-07

    申请号：JP2009140853

    申请日：2009-06-12

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： VITALLY PROSYENTSOV ,  LALBAHADOERSING SANJAY ,  MUSA SAMI ,  LEE HYUN-WOO

    IPC: H01L21/027

    CPC classification number: G03B27/52 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/7085

    Abstract: PROBLEM TO BE SOLVED: To provide an improved lithographic apparatus in which at least one of the disadvantages in the conventional techniques has been removed or alleviated.
    SOLUTION: A substrate stage of an immersion-type lithographic apparatus configured to project a patterned radiation beam from a patterning device onto a substrate is provided to hold the substrate and comprises at least one sensor for sensing the patterned radiation beam. The sensor includes, at least a partially transmissive layer having a front surface facing the incoming radiation beam and a back surface opposite to the front surface, and the back surface is provided with at least one sensor mark to be exposed to the radiation beam passing through the transmissive layer.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种改进的光刻设备，其中传统技术中的至少一个缺点已被消除或减轻。 解决方案：设置浸没式光刻设备的衬底台，其被配置为将图案化的辐射束从图案形成装置投影到衬底上以保持衬底并且包括用于感测图案化的辐射束的至少一个传感器。 传感器包括至少一个具有面向入射辐射束的前表面和与前表面相对的后表面的部分透射层，并且背表面设置有至少一个传感器标记，以暴露于通过的辐射束 透射层。 版权所有（C）2010，JPO＆INPIT

    System and method of determining critical dimension using alignment sensor of lithographic apparatus
    2.
    发明专利
    System and method of determining critical dimension using alignment sensor of lithographic apparatus 有权
    使用光刻设备的对准传感器确定关键尺寸的系统和方法

    公开(公告)号：JP2008124467A

    公开(公告)日：2008-05-29

    申请号：JP2007290272

    申请日：2007-11-08

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LEE HYUN-WOO ,  MUSA SAMI

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: G03F7/70641 ,  G03F7/70625 ,  G03F9/7065 ,  G03F9/7076

    Abstract: PROBLEM TO BE SOLVED: To provide a system and method of determining parameters, such as a critical dimension of a patterned structure and a best focus state of a lithographic apparatus and the like, based on strength measurement of nonzero degree of diffracted light from an experimental structure.
    SOLUTION: An experimental structure includes a first line having a period longer than a wavelength of diffracted light, and an array of a partially filled space. The experimental structure also includes a second line including a partially filled space, and an array of the space.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种基于非零度的衍射光的强度测量来提供确定诸如图案化结构的临界尺寸和光刻设备的最佳聚焦状态等参数的系统和方法 从实验结构。 解决方案：实验结构包括具有比衍射光波长长的周期的第一行和部分填充空间的阵列。 实验结构还包括包括部分填充的空间的第二线和空间的阵列。 版权所有（C）2008，JPO＆INPIT

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