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    METHOD AND APPARATUS FOR DETERMINING AN OVERLAY ERROR.
    2.
    发明专利
    METHOD AND APPARATUS FOR DETERMINING AN OVERLAY ERROR. 未知

    公开(公告)号：NL2007088A

    公开(公告)日：2012-01-23

    申请号：NL2007088

    申请日：2011-07-12

    Applicant: ASML NETHERLANDS BV

    Inventor： SCHAAR MAURITS ,  BOEF ARIE ,  FUCHS ANDREAS ,  COOGANS MARTYN ,  BHATTACHARYYA KAUSTUVE ,  MORGAN STEPHEN PETER ,  KUBIS MICHAEL

    IPC: G01N21/47 ,  G03F7/20

    Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n′), p(n″) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

    METROLOGY METHOD AND APPARATUS, LITHOGRAPHIC SYSTEM, DEVICE MANUFACTURING METHOD AND SUBSTRATE.
    4.
    发明专利
    METROLOGY METHOD AND APPARATUS, LITHOGRAPHIC SYSTEM, DEVICE MANUFACTURING METHOD AND SUBSTRATE. 未知

    公开(公告)号：NL2010988A

    公开(公告)日：2014-01-07

    申请号：NL2010988

    申请日：2013-06-17

    Applicant: ASML NETHERLANDS BV

    Inventor： SCHAAR MAURITS ,  BHATTACHARYYA KAUSTUVE ,  SMILDE HENDRIK

    IPC: G03F7/20 ,  G01N21/47

    Abstract: A lithographic process is used to form a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprising a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

    METHOD OF DETERMINING OVERLAY ERROR AND A DEVICE MANUFACTURING METHOD.
    5.
    发明专利
    METHOD OF DETERMINING OVERLAY ERROR AND A DEVICE MANUFACTURING METHOD. 未知

    公开(公告)号：NL2004995A

    公开(公告)日：2011-01-24

    申请号：NL2004995

    申请日：2010-06-29

    Applicant: ASML NETHERLANDS BV

    Inventor： COENE WILLEM ,  SCHAAR MAURITS

    IPC: G01N21/47 ,  G03F7/20

    Abstract: A method of determining an overlay error in a set of superimposed patterns. The patterns are divided into two and a first part of the pattern has a bias of d+s/2 between the first layer and second layer. A second part of the pattern has a bias of d−s/2 between the first and second layer. The two parts of the pattern are of equal size. To eliminate a particular harmonic s is chosen to be T/(2n) where T is the period of the pattern and n is a positive integer.

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