公开(公告)号：EP1398298A3

公开(公告)日：2015-06-24

申请号：EP03077437.6

申请日：2003-08-04

Applicant: Delphi Technologies, Inc.

Inventor： Freeman, John E. ,  Baney, William J. ,  Betzner, Timothy M. ,  Chilcott, Dan W. ,  Christenson, John C. ,  Vas, Timothy A. ,  Queen, George M. ,  Long, Stephen P.

IPC: B81C1/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R31/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00666 ,  H04R19/005 ,  H04R31/006 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49005

Abstract: A process of forming a capacitive audio transducer (10), preferably having an all-silicon monolithic construction that includes capacitive plates (22,24) defined by doped single-crystal silicon layers (18,62). The capacitive plates (22,24) are defined by etching the single-crystal silicon layers (18,62), and the capacitive gap (30) therebetween is accurately established by wafer bonding, yielding a transducer (10) that can be produced by high-volume manufacturing practices.

公开(公告)号：EP1398298A2

公开(公告)日：2004-03-17

申请号：EP03077437.6

申请日：2003-08-04

Applicant: Delphi Technologies, Inc.

Inventor： Freeman, John E. ,  Baney, William J. ,  Betzner, Timothy M. ,  Chilcott, Dan W. ,  Christenson, John C. ,  Vas, Timothy A. ,  Queen, George M. ,  Long, Stephen P.

IPC: B81C1/00

CPC classification number: H04R31/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00666 ,  H04R19/005 ,  H04R31/006 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49005

Abstract: A process of forming a capacitive audio transducer (10), preferably having an all-silicon monolithic construction that includes capacitive plates (22,24) defined by doped single-crystal silicon layers (18,62). The capacitive plates (22,24) are defined by etching the single-crystal silicon layers (18,62), and the capacitive gap (30) therebetween is accurately established by wafer bonding, yielding a transducer (10) that can be produced by high-volume manufacturing practices.

Abstract translation: 通过蚀刻掺杂有硼和锗的单晶硅层形成上下电容板。 响应于由于声音引起的振动而发生的电容器板之间的距离的变化而产生电容性输出信号。