Abstract:
A sensor module (10) is provided having a compact housing (12) containing a sensor (22). A low temperature co-fired ceramic substrate (20) is located on the housing (12). The sensor (22) and signal processing circuitry (24) are located on the low temperature co-fired ceramic substrate (20). The sensor module (10) further includes a metal shield (26, 28) substantially encapsulating the sensor (22).
Abstract:
A silicon-based high pressure sensor module incorporates a low temperature co-fired ceramic (LTCC) substrate. The LTCC substrate can withstand high pressures. A bossed container filled with oil is mounted on the substrate and houses a sensor cell. The top surface of the bossed container is flexible and deflects under pressure. By controlling the surface area and the thickness of the top surface, the pressure sensor can be configured to measure a wide range of pressures. The oil transfers pressure from the bossed container to the diaphragm of the sensor cell while protecting the sensor cell from high pressures and harsh media.
Abstract:
A silicon-based high pressure sensor module incorporates a low temperature co-fired ceramic (LTCC) substrate. The LTCC substrate can withstand high pressures. A bossed container filled with oil is mounted on the substrate and houses a sensor cell. The top surface of the bossed container is flexible and deflects under pressure. By controlling the surface area and the thickness of the top surface, the pressure sensor can be configured to measure a wide range of pressures. The oil transfers pressure from the bossed container to the diaphragm of the sensor cell while protecting the sensor cell from high pressures and harsh media.
Abstract:
A process of forming a capacitive audio transducer (10), preferably having an all-silicon monolithic construction that includes capacitive plates (22,24) defined by doped single-crystal silicon layers (18,62). The capacitive plates (22,24) are defined by etching the single-crystal silicon layers (18,62), and the capacitive gap (30) therebetween is accurately established by wafer bonding, yielding a transducer (10) that can be produced by high-volume manufacturing practices.
Abstract:
A process of forming a capacitive audio transducer (10), preferably having an all-silicon monolithic construction that includes capacitive plates (22,24) defined by doped single-crystal silicon layers (18,62). The capacitive plates (22,24) are defined by etching the single-crystal silicon layers (18,62), and the capacitive gap (30) therebetween is accurately established by wafer bonding, yielding a transducer (10) that can be produced by high-volume manufacturing practices.
Abstract:
A pressure sensor module (40) is provided with an isolation platform which isolates stress. The pressure sensor module (40) includes a base structure (42, 46 or 54) and a cantilever member (42) formed in the base structure by an isolation gap (50). A pressure sensing element (10) is located on the cantilever member (42) such that the cantilever member (42) provides stress isolation to the pressure sensing element (10).
Abstract:
A technique for manufacturing an integrated pressure sensor (150) includes a number of steps. Initially, a substrate (200) with conductive electrical traces located on first and second sides of the substrate (200) is provided. A plurality of compensation circuits (100) are positioned in an array on the first side of the substrate (200) in electrical contact with one or more of the conductive electrical traces on the first side of the substrate (200). A plurality of pressure sensors (10) are positioned on the second side of the substrate (200) in electrical contact with one or more of the conductive electrical traces on the second side of the substrate (200). Each one of the sensors (10) is associated with one of the compensation circuits (100) to form a plurality of pressure sensor-compensation circuit pairs. The substrate (200) includes conductive vias to electrically connect each of the sensor-compensation circuit pairs. Each of the compensation circuits (100) provides temperature compensation for an associated one of the sensors (10). The sensor-compensation circuit pairs are calibrated and singulated for final packaging.