公开(公告)号：EP1398298A3

公开(公告)日：2015-06-24

申请号：EP03077437.6

申请日：2003-08-04

Applicant: Delphi Technologies, Inc.

Inventor： Freeman, John E. ,  Baney, William J. ,  Betzner, Timothy M. ,  Chilcott, Dan W. ,  Christenson, John C. ,  Vas, Timothy A. ,  Queen, George M. ,  Long, Stephen P.

IPC: B81C1/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R31/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00666 ,  H04R19/005 ,  H04R31/006 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49005

Abstract: A process of forming a capacitive audio transducer (10), preferably having an all-silicon monolithic construction that includes capacitive plates (22,24) defined by doped single-crystal silicon layers (18,62). The capacitive plates (22,24) are defined by etching the single-crystal silicon layers (18,62), and the capacitive gap (30) therebetween is accurately established by wafer bonding, yielding a transducer (10) that can be produced by high-volume manufacturing practices.

公开(公告)号：EP1857407A2

公开(公告)日：2007-11-21

申请号：EP07075352.0

申请日：2007-05-07

Applicant: Delphi Technologies, Inc.

Inventor： Freeman, John E. ,  Staller, Steven E. ,  Chase, Troy A.

IPC: B81C3/00

CPC classification number: B81C3/002 ,  B81C2201/019

Abstract: A method for fabricating microchip devices is provided. The method includes the steps of providing a first planar substrate (120), locating at least one first alignment feature (128) in the surface (122) of the first planar substrate (120), and bonding a second substrate (140) to the surface (122) of the first planar substrate (120). The method further includes the step of aligning subsequent process operations performed on at least one of the first (120) and second (140) substrates to visible alignment features of the first substrate (120), wherein the visible alignment features are at least one of the first alignment feature (128) and a visible feature that corresponds to the location of the first alignment feature (128).

Abstract translation: 提供了一种用于制造微芯片器件的方法。 该方法包括以下步骤：提供第一平面基板（120），将第一平面基板（120）的表面（122）中的至少一个第一对准特征（128）定位，以及将第二基板（140） 第一平面基板（120）的表面（122）。 该方法还包括将在第一（120）和第二（140）衬底中的至少一个上执行的随后的处理操作与第一衬底（120）的可见对准特征对准的步骤，其中可见对准特征是 第一对准特征（128）和对应于第一对准特征（128）的位置的可见特征。

公开(公告)号：EP1398298A2

公开(公告)日：2004-03-17

申请号：EP03077437.6

申请日：2003-08-04

Applicant: Delphi Technologies, Inc.

Inventor： Freeman, John E. ,  Baney, William J. ,  Betzner, Timothy M. ,  Chilcott, Dan W. ,  Christenson, John C. ,  Vas, Timothy A. ,  Queen, George M. ,  Long, Stephen P.

IPC: B81C1/00

CPC classification number: H04R31/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00666 ,  H04R19/005 ,  H04R31/006 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49005

Abstract: A process of forming a capacitive audio transducer (10), preferably having an all-silicon monolithic construction that includes capacitive plates (22,24) defined by doped single-crystal silicon layers (18,62). The capacitive plates (22,24) are defined by etching the single-crystal silicon layers (18,62), and the capacitive gap (30) therebetween is accurately established by wafer bonding, yielding a transducer (10) that can be produced by high-volume manufacturing practices.

Abstract translation: 通过蚀刻掺杂有硼和锗的单晶硅层形成上下电容板。 响应于由于声音引起的振动而发生的电容器板之间的距离的变化而产生电容性输出信号。