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    LIGHT-EMITTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140070250A1

    公开(公告)日：2014-03-13

    申请号：US13856220

    申请日：2013-04-03

    Applicant: Epistar Corporation

    Inventor： Shih-I CHEN ,  Tsung-Xian LEE ,  Yi-Ming CHEN ,  Wei-Yu CHEN ,  Ching- Pei LIN ,  Min-Hsun HSIEH ,  Cheng-Nan HAN ,  Tien-Yang WANG ,  Hsing-Chao CHEN ,  Hsin-Mao LIU ,  Zong-Xi CHEN ,  Tzu-Chieh HSU ,  Chien-Fu HUANG ,  Yu-Ren PENG

    IPC: H01L33/50

    CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

    Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

    LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180294383A1

    公开(公告)日：2018-10-11

    申请号：US16003866

    申请日：2018-06-08

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I CHEN ,  Wei-Yu CHEN ,  Yi-Ming CHEN ,  Ching-Pei LIN ,  Tsung-Xian LEE

    IPC: H01L33/42 ,  H01L33/38

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

    LIGHT-EMITTING DEVICE
    6.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150155444A1

    公开(公告)日：2015-06-04

    申请号：US14579807

    申请日：2014-12-22

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I CHEN ,  Wei-Yu CHEN ,  Yi-Ming CHEN ,  Ching-Pei LIN ,  Tsung-Xian LEE

    IPC: H01L33/42

    CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

    Abstract translation: 公开了一种发光器件，其包括具有长度，宽度，第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层的发光堆叠， 其中所述第一导电类型半导体层，所述有源层和所述第二导电类型半导体层在堆叠方向上堆叠。 第一电极耦合到第一导电类型半导体层并且在平行于堆叠方向的方向上延伸，并且第二电极耦合到第二导电类型半导体层并且在平行于层叠方向的方向上延伸。 电介质层设置在第一电极和第二电极之间。

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