公开(公告)号：CA1308594C

公开(公告)日：1992-10-13

申请号：CA542534

申请日：1987-07-20

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  CHOW MING-FEA ,  CONLEY WILLARD E ,  CROCKATT DALE M ,  FRECHET JEAN M J ,  HEFFERON GEORGE J ,  ITO HIROSHI ,  IWAMOTO NANCY E ,  WILLSON CARLTON G

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree.C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree.C to about 250.degree.C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. FI9-86-021

公开(公告)号：CA1290087C

公开(公告)日：1991-10-01

申请号：CA507288

申请日：1986-04-22

Applicant: IBM

Inventor： SKINNER MICHAEL P ,  BRUNSVOLD WILLIAM R ,  CROCKATT DALE M

IPC: G03C1/00 ,  C08J3/09 ,  G03F7/004 ,  G03F7/039 ,  C08L33/24 ,  G03F7/16

Abstract: FILM-FORMING COMPOSITIONS COMPRISING POLYGLUTAIMIDE This invention relates to a composition of matter useful for applying polyglutarimide-comprised films to a surface, and to a method of determining what the composition of matter should be to obtain a particular applied dry film thickness, wherein the dry film has a uniform thickness profile. In particular, the present invention enables the spin-casting of films comprised of polyglutarimide to film thicknesses greater than 1 micrometer. Films of thicknesses greater than 1 micrometer have particular use in the microelectronics industry, for applications such as planarizing underlayers, metal lift off layers, and as part of multilayer resist structures where it is desired to obtain a high aspect ratio for the resist structure.