公开(公告)号：JP2004012554A

公开(公告)日：2004-01-15

申请号：JP2002162218

申请日：2002-06-03

Applicant: JSR CORP ,  IBM

Inventor： ISHII HIROYUKI ,  NISHIMURA ISAO ,  NAKAMURA ATSUSHI ,  BRUNSVOLD WILLIAM R ,  WENJII LEE ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  C08F220/10 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition excellent in various properties including transparency to a radiation, sensitivity, resolution, dry etching resistance and pattern shape, and useful as a chemically amplified resist. SOLUTION: The radiation-sensitive resin composition comprises (A) an alkali-insoluble or slightly alkali-soluble resin which contains an acid dissociation group and becomes alkali-soluble when the acid dissociation group dissociates and (B) a radiation-sensitive acid generator typified by triphenylsulfonium bis(nonafluoro-n-butanesulfonyl)imidate, 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophenium bis(nonafluoro-n-butanesulfonyl)imidate or 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophenium tris(nonafluoro-n-butanesulfonyl)methanide. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003241384A

公开(公告)日：2003-08-27

申请号：JP2002046679

申请日：2002-02-22

Applicant: JSR CORP ,  IBM ,  JSR MICRO INC

Inventor： NISHIMURA YUKIO ,  YAMAMOTO MASASHI ,  ISHII HIROYUKI ,  MARK SLEZAK ,  BRUNSVOLD WILLIAM R ,  MARGARET C LAWSON ,  CHEN KUANG-JUNG ,  KWONG RANEE W ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  C08F220/18 ,  C08F220/28 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation and useful as a chemically amplified resist excellent in sensitivity, resolution, dry etching resistance and pattern shape. SOLUTION: The radiation-sensitive resin composition comprises (A) a resin typified by a copolymer of 2-methyl-2-adamantyl methacrylate, 3-hydroxy-1- adamantyl methacrylate and a methacrylic ester of formula (1), (B) a radiation- sensitive acid generator typified by triphenylsulfonium nonafluoro-n- butanesulfonate or 1-(4-n-butoxy-1-naphthyl)tetrahydrothiophenium perfluoro-n- octanesulfonate and (C) a solvent. Preferably the solvent (C) includes at least one selected from the group comprising propylene glycol monomethyl ether acetate, 2-heptanone and cyclohexanone. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2004012545A

公开(公告)日：2004-01-15

申请号：JP2002162080

申请日：2002-06-03

Applicant: JSR CORP ,  JSR MICRO INC ,  IBM

Inventor： YAMAMOTO MASASHI ,  ISHII HIROYUKI ,  ISHIDA EIKO ,  NISHIMURA YUKIO ,  MARK SLEZAK ,  BRUNSVOLD WILLIAM R ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  C08F20/28 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation, excellent in basic physical properties as a resist, such as sensitivity, resolution and pattern shape, and useful particularly as a chemically amplified resist excellent in focus latitude. SOLUTION: The radiation-sensitive resin composition comprises (A) a mixture of alkali-insoluble or slightly alkali-soluble resins having separate repeating units protected with acid-dissociating protective groups and typified by repeating units derived from 2-methyl-2-adamantyl (meth)acrylate, 1-ethylcyclohexyl (meth)acrylate, etc., wherein the acid-dissociating protective group of at least one of the resins is different from that of the other, and (B) a radiation-sensitive acid generator. COPYRIGHT: (C)2004,JPO

公开(公告)号：DE69214035T2

公开(公告)日：1997-04-10

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：CA1290087C

公开(公告)日：1991-10-01

申请号：CA507288

申请日：1986-04-22

Applicant: IBM

Inventor： SKINNER MICHAEL P ,  BRUNSVOLD WILLIAM R ,  CROCKATT DALE M

IPC: G03C1/00 ,  C08J3/09 ,  G03F7/004 ,  G03F7/039 ,  C08L33/24 ,  G03F7/16

Abstract: FILM-FORMING COMPOSITIONS COMPRISING POLYGLUTAIMIDE This invention relates to a composition of matter useful for applying polyglutarimide-comprised films to a surface, and to a method of determining what the composition of matter should be to obtain a particular applied dry film thickness, wherein the dry film has a uniform thickness profile. In particular, the present invention enables the spin-casting of films comprised of polyglutarimide to film thicknesses greater than 1 micrometer. Films of thicknesses greater than 1 micrometer have particular use in the microelectronics industry, for applications such as planarizing underlayers, metal lift off layers, and as part of multilayer resist structures where it is desired to obtain a high aspect ratio for the resist structure.

公开(公告)号：DE3677665D1

公开(公告)日：1991-04-04

申请号：DE3677665

申请日：1986-07-25

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  CONLEY WILLARD E ,  JACOBS SCOTT L ,  MACK GEORGE L ,  MERRIT DAVID P ,  UPTMOR ANN M

IPC: C08L79/08 ,  C08K5/13 ,  C08K5/1545 ,  G03F7/004 ,  G03F7/037 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26

公开(公告)号：SG43691A1

公开(公告)日：1997-11-14

申请号：SG1995002204

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONDS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：DE69214035D1

公开(公告)日：1996-10-31

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：CA1308594C

公开(公告)日：1992-10-13

申请号：CA542534

申请日：1987-07-20

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  CHOW MING-FEA ,  CONLEY WILLARD E ,  CROCKATT DALE M ,  FRECHET JEAN M J ,  HEFFERON GEORGE J ,  ITO HIROSHI ,  IWAMOTO NANCY E ,  WILLSON CARLTON G

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree.C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree.C to about 250.degree.C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. FI9-86-021