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    1.
    发明专利
    未知

    公开(公告)号：DE3773061D1

    公开(公告)日：1991-10-24

    申请号：DE3773061

    申请日：1987-06-26

    Applicant: IBM

    Inventor： ALLEN ROBERT DAVID ,  CHIONG KAOLIN N ,  CHOW MING-FEA ,  MACDONALD SCOTT ARTHUR ,  YANG JER-MING ,  WILLSON CARLTON GRANT

    IPC: H01L21/027 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38

    Abstract: The present invention is concerned with a method of converting a single resist layer into a multilayered resist. The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

    3.
    发明专利
    未知

    公开(公告)号：DE69324439D1

    公开(公告)日：1999-05-20

    申请号：DE69324439

    申请日：1993-10-29

    Applicant: IBM

    Inventor： BREYTA GREGORY ,  CLECAK NICHOLAS JEFFRIES ,  HINSBERG III WILLIAM DINAN ,  HOFER DONALD CLIFFORD ,  ITO HIROSHI ,  MACDONALD SCOTT ARTHUR ,  SOORIJAKUMARAN RATMAN

    IPC: G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  H01L21/47

    Abstract: A lithographic imaging process is provided for use in the manufacture of integrated circuits. A substrate is coated with a polymeric film comprising a vinyl polymer, a photosensitive acid generator, and acid labile groups. It is then heated to typically just above the glass transition temperature of the polymer, but below the cleavage temperature of the acid labile groups. The film is then expose imagewise to radiation to generate free acid, and the film is once more heated, again to typically just above the glass transition temperature of the polymer, but below the cleavage temperature of the acid labile groups. Finally the image is developed. The process provides protection to the photoresist film from airborne chemical contaminants.

    4.
    发明专利
    未知

    公开(公告)号：DE3667553D1

    公开(公告)日：1990-01-18

    申请号：DE3667553

    申请日：1986-01-24

    Applicant: IBM

    Inventor： HULT ANDERS ,  ITO HIROSHI ,  MACDONALD SCOTT ARTHUR ,  WILLSON CARLTON GRANT

    IPC: H01L21/30 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03C1/68 ,  G03F7/10

    Abstract: Negative relief images are generated by a process comprising the use of cationic polymerization and plasma etching. The process comprises a process for generating a negative tone resist image comprising the steps of:(1) coating a substrate with a film that contains a cationic photoinitiator;(2) exposing the film in an imagewise fashion to radiation and thereby generating cationic initiator in the exposed regions of the film;(3) treating the exposed film with a cationic-sensitive monomer to form a film of polymer resistant to plasma etching; and(4) developing the resist image by etching with a plasma.

    5.
    发明专利
    未知

    公开(公告)号：DE69324439T2

    公开(公告)日：1999-11-25

    申请号：DE69324439

    申请日：1993-10-29

    Applicant: IBM

    Inventor： BREYTA GREGORY ,  CLECAK NICHOLAS JEFFRIES ,  HINSBERG III WILLIAM DINAN ,  HOFER DONALD CLIFFORD ,  ITO HIROSHI ,  MACDONALD SCOTT ARTHUR ,  SOORIJAKUMARAN RATMAN

    IPC: G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  H01L21/47

    Abstract: A lithographic imaging process is provided for use in the manufacture of integrated circuits. A substrate is coated with a polymeric film comprising a vinyl polymer, a photosensitive acid generator, and acid labile groups. It is then heated to typically just above the glass transition temperature of the polymer, but below the cleavage temperature of the acid labile groups. The film is then expose imagewise to radiation to generate free acid, and the film is once more heated, again to typically just above the glass transition temperature of the polymer, but below the cleavage temperature of the acid labile groups. Finally the image is developed. The process provides protection to the photoresist film from airborne chemical contaminants.

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