公开(公告)号：MY126811A

公开(公告)日：2006-10-31

申请号：MYPI20011417

申请日：2001-03-27

Applicant: IBM

Inventor： JOHN J ELLIS-MONAGHAN ,  TOSHIHARU FURUKAWA ,  ARNE W BALLANTINE ,  GLENN R MILLER ,  JAMES A SLINKMAN ,  JEFFREY D GILBERT

IPC: H01L21/04 ,  H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L21/326

Abstract: A METHOD FOR FORMING A DESIRED JUNCTION PROFILE IN A SEMICONDUCTOR DEVICE . AT LEAST DOPANT IS INTRODUCED INTO A SEMICONDUCTOR SUBSRATE. THE AT LEAST ONE DOPANT IS DIFFUSED IN THE SEMICONDUCTOR SUBSTRATE THROUGH ANNEALING THE SEMICONDUCTOR SUBSTRATE AND THE AT LEAST ONE DOPANT WHILE SIMULTANEOUSLY EXPOSING THE SEMICONDUCTOR SUBSTRATE TO AN ELECTIC FIELD. (FIG. 5)

公开(公告)号：SG96265A1

公开(公告)日：2003-05-23

申请号：SG200107623

申请日：2001-12-06

Applicant: IBM

Inventor： ARNE W BALLANTINE ,  JEFFREY SCOTT BROWN ,  JEFFREY D GILBERT ,  JAMES J QUINLIVAN ,  JAMES ALBERT SLINKMAN ,  ANTHONY C SPERANZA

IPC: H01L21/76 ,  H01L21/316 ,  H01L21/762 ,  H01L21/31

Abstract: A structure comprising a trench having a liner with rounded corners in the top and bottom of the trench is obtained by rapid thermal oxidation.