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公开(公告)号：JPH0653495A
公开(公告)日：1994-02-25
申请号：JP13051793
申请日：1993-06-01
Applicant: IBM
Inventor： FUERUNANDO DOORIINZU , RIANNCHIYUU FUSHIA , RUISU ERUUSHII SHIYUU , JIERARUDO AARU RAASEN , JIERARUDEIN SHII SHIYUWARUTSU
IPC: H01L29/43 , H01L21/225 , H01L21/28 , H01L21/3213 , H01L21/336 , H01L29/78 , H01L29/784 , H01L29/46
Abstract: PURPOSE: To provide a method of manufacturing an MOS transistor, having an inverted T-shaped high-m.p. metal gate. CONSTITUTION: This gate comprises a main CVD W layer 14A and lower sputtered W layer 16A, extending from the bottom of a CVD part to the outside, so that the gate section becomes like an inverted T-shape. To etch the CVD W layer, a Cl2 /O2 plasma etching is used. To etch the sputtered W layer for forming gate electrodes, a chemical etching is used. The sputtered W is etched to a lesser degree by the Cl2 /O2 reactive plasma etching than by the CVD W. The sputtered W layer acts as a shield to prevent a lower oxide layer 10 from the ion damages during manufacturing.
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公开(公告)号：JPS529648A
公开(公告)日：1977-01-25
申请号：JP7999576
申请日：1976-07-07
Applicant: IBM
Inventor： JIYOSEFU EMU HAABIRUCHIYATSUKU , UIRIAMU SHII METSUGAA , YAKOBU RAIZUMAN , JIERARUDEIN SHII SHIYUWARUTSU
IPC: C23F4/00 , C23F1/00 , H01L21/302 , H01L21/3065
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公开(公告)号：JPS5487646A
公开(公告)日：1979-07-12
申请号：JP13273478
申请日：1978-10-30
Applicant: IBM
IPC: B01J19/00 , C23F1/00 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/316 , H01L21/3213
Abstract: Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching.
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公开(公告)号：JPS58107654A
公开(公告)日：1983-06-27
申请号：JP17650082
申请日：1982-10-08
Applicant: IBM
Inventor： BUARERIA PURATAA , ROURA BII ROSUMAN , POORU EMU SHIYAIPURU , JIERARUDEIN SHII SHIYUWARUTSU
IPC: H01L21/3205 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/48 , H01L21/768 , H01L23/498 , H01L23/532 , H05K3/46
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