METHOD FOR MANUFACTURING FILM MASK WITH MASK FIELD

    公开(公告)号:JPH10261584A

    公开(公告)日:1998-09-29

    申请号:JP5301298

    申请日:1998-03-05

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To easily form a support wall by forming a film mask with a mask field and a single-crystal silicon body, providing a support wall being covered with a film, forming the support wall by anisotropic plasma etching, and performing wet etching immediately before reaching the covering film of the support wall. SOLUTION: The support wall of a mask with a mask field 8 where a boundary is screened by a thin support wall 1 consists of a single-crystal silicon and is covered with a film 2 that is approximately 0.2 mm-2 μm thick. The support wall is formed by the anisotropic plasma etching of the single-crystal silicon body 1. Therefore, an opening that is approximately 400 μm deep with a vertical wall is etched into the silicon body. Plasma etching stops immediately before reaching the film 2 and the final thickness part before the film is eliminated by wet etching. A support wall being arranged accurately vertically to the film is formed easily, thus preventing the film from being damaged.

    2.
    发明专利
    未知

    公开(公告)号:DE69023030T2

    公开(公告)日:1996-05-30

    申请号:DE69023030

    申请日:1990-02-20

    Applicant: IBM

    Abstract: A three-stage E-beam deflection system employs breaking the entire field to be scanned into clusters and sub-fields. The scanning provided by the first stage of deflection which scans within the entire field is rectilinear and discontinuous with the scan stopping in the center of each of the clusters where an exposure is to be made, and scanning is the same within each cluster from sub-field to sub-field. The scanning within a cluster by the second stage stops in the center of each sub-field where exposure is to be made. The third stage uses high speed electrostatic deflection to provide scanning with a vector scanning mode within the sub-field being scanned.

    Mask production from membrane-covered single crystal silicon@

    公开(公告)号:DE19710798C1

    公开(公告)日:1998-07-30

    申请号:DE19710798

    申请日:1997-03-17

    Applicant: IBM

    Abstract: In the production of a mask with mask areas and thin support walls (1) which are covered with a membrane (2) and which are formed by anisotropic plasma etching of a single crystal silicon body, a wet etching step is carried out just before reaching the membrane (2) and the support walls (1) are aligned parallel to the 100 direction of the silicon body. Preferably, wet etching is carried out with an alkaline solution and the membrane is a 0.2-2 mu thick membrane of heavily doped silicon, silicon nitride or a SiO2/Si3N4/SiO2 layer combination which is covered on both sides with either a heavy metal-coated silicon nitride layer or a heavy metal layer.

    4.
    发明专利
    未知

    公开(公告)号:DE69023030D1

    公开(公告)日:1995-11-23

    申请号:DE69023030

    申请日:1990-02-20

    Applicant: IBM

    Abstract: A three-stage E-beam deflection system employs breaking the entire field to be scanned into clusters and sub-fields. The scanning provided by the first stage of deflection which scans within the entire field is rectilinear and discontinuous with the scan stopping in the center of each of the clusters where an exposure is to be made, and scanning is the same within each cluster from sub-field to sub-field. The scanning within a cluster by the second stage stops in the center of each sub-field where exposure is to be made. The third stage uses high speed electrostatic deflection to provide scanning with a vector scanning mode within the sub-field being scanned.

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