公开(公告)号：BR9203415A

公开(公告)日：1993-04-13

申请号：BR9203415

申请日：1992-09-01

Applicant: IBM

Inventor： AOUDE FARID YOUSSIF ,  DAVID LAWRENCE D ,  DIVAKARUNI RENUKA S ,  FAROOQ SHAJI ,  HERRON LESTER W

IPC: H01L23/12 ,  H01L21/48 ,  H01L23/498 ,  H05K1/09 ,  H05K3/46 ,  C04B41/38

Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

公开(公告)号：BR8700762A

公开(公告)日：1987-12-29

申请号：BR8700762

申请日：1987-02-18

Applicant: IBM

Inventor： DAVID LAWRENCE D

IPC: C03C3/085 ,  C03B8/02 ,  C03B19/12 ,  C03B20/00 ,  C03C3/091 ,  C03C3/097 ,  C03C10/00 ,  C03C10/08 ,  C04B35/195 ,  C04B35/626 ,  C01B33/20

公开(公告)号：CA2039029C

公开(公告)日：1994-07-19

申请号：CA2039029

申请日：1991-03-25

Applicant: IBM

Inventor： DAVID LAWRENCE D

IPC: C23F1/26 ,  C23F1/14 ,  C23F1/38 ,  C23F1/46

Abstract: A neutral or near neutral pH etching solution for effectively etching molybdenum and tungsten including: an aqueous ferricyanide ion solution, a soluble molybdate or tungstate, and an essential compound such that upon combination of said soluble molybdate or tungstate and said essential compound, a heteropoly compound is formed in which said essential compound contributes at least one heteroatom to said heteropoly compound. The etching solution is most preferably used for etching molybdenum or tungsten which is adhered or proximate to a base-sensitive material.

公开(公告)号：CA2072727A1

公开(公告)日：1993-03-11

申请号：CA2072727

申请日：1992-06-29

Applicant: IBM

Inventor： AOUDE FARID Y ,  DAVID LAWRENCE D ,  DIVAKARUNI RENUKA S ,  FAROOQ SHAJI ,  HERRON LESTER W ,  LASKY HAL M ,  MASTREANI ANTHONY ,  NATARAJAN GOVINDARAJAN ,  REDDY SRINIVASA S N ,  SURA VIVEK M ,  VALLABHANENI RAO V ,  WALL DONALD R

IPC: H01L23/12 ,  H01L21/48 ,  H01L23/498 ,  H05K1/09 ,  H05K3/46 ,  H01B1/02

Abstract: FI9-90-027 COPPER-BASED PASTE CONTAINING COPPER ALUMINATE FOR MICROSTRUCTURAL AND SHRINKAGE CONTROL OF COPPER-FILLED VIAS A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

公开(公告)号：BR9101651A

公开(公告)日：1991-12-10

申请号：BR9101651

申请日：1991-04-24

Applicant: IBM

Inventor： DAVID LAWRENCE D

IPC: C23F1/26 ,  C23F1/14 ,  C23F1/38 ,  C23F1/46 ,  C01G39/00 ,  C01G41/00 ,  C22B34/34 ,  C22B34/36

公开(公告)号：CA2011709C

公开(公告)日：1993-12-21

申请号：CA2011709

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY W ,  DAVID LAWRENCE D ,  GUTHRIE WILLIAM L ,  KAUFMAN FRANK B ,  PATRICK WILLIAM J ,  RODBELL KENNETH P

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  C23F1/44 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：CA1315525C

公开(公告)日：1993-04-06

申请号：CA529469

申请日：1987-02-11

Applicant: IBM

Inventor： DAVID LAWRENCE D

IPC: C03C3/085 ,  C03B8/02 ,  C03B19/12 ,  C03B20/00 ,  C03C3/091 ,  C03C3/097 ,  C03C10/00 ,  C03C10/08 ,  C04B35/195 ,  C04B35/626

Abstract: FI 9-85-035 ORGANOMETALLIC-DERIVED CORDIERITE AND OTHER COMPOUNDS COMPRISING OXIDES OF SILICON The present invention provides a method of synthesizing amorphous cordierite-forming glasses from organometallic precursors. Either the sol-gel/ .beta.-diketonate technique or the amorphouschelating hydroxycarboxylate process can be used advantageously. The method of the present invention can also be used to form 5 component comprised and 2 component comprised amorphous compositions wherein one of the components is an oxide of silicon.

公开(公告)号：CA2039029A1

公开(公告)日：1991-10-31

申请号：CA2039029

申请日：1991-03-25

Applicant: IBM

Inventor： DAVID LAWRENCE D

IPC: C23F1/26 ,  C23F1/14 ,  C23F1/38 ,  C23F1/46

公开(公告)号：CA1280873C

公开(公告)日：1991-03-05

申请号：CA570930

申请日：1988-06-30

Applicant: IBM

Inventor： DAVID LAWRENCE D

IPC: C01B21/06 ,  C01B21/064 ,  C01B21/072 ,  C01B25/08 ,  C01B35/04 ,  C07F7/02 ,  C07F7/08 ,  C07F7/10 ,  C07F9/02 ,  C07F9/68 ,  C07F9/90 ,  C22C1/00 ,  C22C28/00 ,  C22C45/00

Abstract: A METHOD OF SYNTHESIZING AMORPHOUS GROUP IIIA-GROUP VA COMPOUNDS A method of synthesizing amorphous Group IIIA-Group VA compounds. A first solution is prepared which consists of a tris(trialkylsilyl) derivative of either a Group IIIA or Group VA element dissolved in an organic solvent. A second solution is then prepared which consists of a halide of the other of the Group IIIA or Group VA element dissolved in an organic solvent. Then the first and second solutions are mixed such that a Group IIIA-Group VA compound is formed along with a trialkylhalosilane by-product. The final step of the method consists of removing the trialkylhalosilane by-product and organic solvent mixture to form the Group IIIA-Group VA condensed phase. FI 9-86-037