公开(公告)号：JP2002141504A

公开(公告)日：2002-05-17

申请号：JP2001209862

申请日：2001-07-10

Applicant: IBM

Inventor： LEE KAM-LEUNG ,  RONEN ANDREW ROY

IPC: H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L21/324 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a CMOS device that substantially eliminates increased transient speed diffusion in a dopant, and has an extremely shallow junction. SOLUTION: In the COMS device, the dopant is injected to a substrate 10 containing Si, a dope region 12 is formed, a metal layer 14 is formed on the substrate containing Si, the metal layer is heated to change into a metal silicide layer 16, the dope region is simultaneously activated, a vacancy formed by heating is joined to an interstitial atom formed by the process, and the transient diffusion in the dopant on the substrate containing Si is substantially eliminated.

公开(公告)号：WO2005067677A2

公开(公告)日：2005-07-28

申请号：PCT/US2005000072

申请日：2005-01-04

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  CHAN KEVIN K ,  CHIDAMBARRAO DURESETI ,  CHRISTIANSEN SILKE H ,  CHU JACK O ,  DOMENICUCCI ANTHONY G ,  LEE KAM-LEUNG ,  MOCUTA ANDA C ,  OTT JOHN A ,  OUYANG QIQING C

IPC: H01L21/336 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.

Abstract translation: 应变Fin场效应晶体管（FinFET）（及其形成方法）包括具有侧壁的松弛的第一材料和形成在第一材料的侧壁上的应变的第二材料。 松弛的第一材料和应变的第二材料形成FinFET的鳍。