公开(公告)号：CA2084685C

公开(公告)日：1996-01-16

申请号：CA2084685

申请日：1990-10-16

Applicant: IBM

Inventor： AGARWALA BIRENDRA N ,  AHSAN AZIZ M ,  BROSS ARTHUR ,  CHADURJIAN MARK F ,  KOOPMAN NICHOLAS G ,  LEE LI-CHUNG ,  PUTTLITZ KARL J ,  RAY SUDIPTA K ,  RYAN JAMES G ,  SCHAEFER JOSEPH G ,  SRIVASTAVA KAMALESH K ,  TOTTA PAUL A ,  WALTON ERICK G ,  WIRSING ADOLF E

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/34 ,  H01L23/488 ,  H01L23/50

Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier (12) a pad (14) is formed on which a solder mass (16) is deposited and capped with a metal layer (19), thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass (26) on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.

公开(公告)号：CA2084685A1

公开(公告)日：1991-12-20

申请号：CA2084685

申请日：1990-10-16

Applicant: IBM

Inventor： AGARWALA BIRENDRA N ,  AHSAN AZIZ M ,  BROSS ARTHUR ,  CHADURJIAN MARK F ,  KOOPMAN NICHOLAS G ,  LEE LI-CHUNG ,  PUTTLITZ KARL J ,  RAY SUDIPTA K ,  RYAN JAMES G ,  SCHAEFER JOSEPH G ,  SRIVASTAVA KAMALESH K ,  TOTTA PAUL A ,  WALTON ERICK G ,  WIRSING ADOLF E

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/34

Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.