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    IMPROVED METHOD OF CLEANING MICROELECTRONICS CIRCUIT BOARD
    1.
    发明专利
    IMPROVED METHOD OF CLEANING MICROELECTRONICS CIRCUIT BOARD 失效

    公开(公告)号：JPH10242107A

    公开(公告)日：1998-09-11

    申请号：JP1540698

    申请日：1998-01-28

    Applicant: IBM ,  SIEMENS AG

    Inventor： COHEN SUSAN ,  COOPER EMMANUEL I ,  PENNER KLAUS ,  RATH DAVID L ,  SRIVASTAVA KAMALESH K

    IPC: H01L21/304 ,  B08B3/12 ,  H01L21/00

    Abstract: PROBLEM TO BE SOLVED: To control the effectiveness of a magnetic aided cleaning for a microelectronics circuit device by establishing the gas concn. level in a cleaning soln. so that the soln. is partly saturated with a gas at a given process temp. SOLUTION: A deionized water source 101 feeds a water to a vacuum degassed unit 102 to remove a gas dissolved in the fed water. The degassed water is fed to a gasifier 103 to hold the total gas concn. near or lower than the saturation level of a cleaning soln. at a process temp., using flow rate controllers 104, 105 or one control mixing valve 106 or another blend measuring valve. The partial saturation level of the gas attained in the soln. is pref. approximately 60-98% of the perfect saturation at a given temp. and pressure. A nonreactive gas having a higher solubility in the soln. is used to obtain a high wafer cleaning effect.

    3.
    发明专利
    未知

    公开(公告)号：DE69834856T2

    公开(公告)日：2006-12-14

    申请号：DE69834856

    申请日：1998-02-13

    Applicant: IBM ,  INFINEON TECHNOLOGIES AG

    Inventor： COHEN SUSAN ,  COOPER EMMANUEL I ,  PENNER KLAUS ,  RATH DAVID L ,  SRIVASTAVA KAMALESH K

    IPC: H01L21/304 ,  H01L21/306 ,  B08B3/12 ,  H01L21/00

    Abstract: An efficient cleaning process of microelectronics devices requires lower levels of megasonic power, lower temperature and much lower concentrations of chemicals. The method controls the effectiveness of megasonics-assisted cleaning of microelectronics devices by securing a gas concentration level in the cleaning solution, such that at the process temperature the solution is partially saturated with the gas. The gas concentration can be controlled either at the plan-wide level or, preferably, at the point of use. In the latter case, two water supply inputs are provided, one of vacuum-degassed water and the other of gas-saturated water. Process water in the desired gas concentration is then obtained by mixing water from the two sources in an appropriate ratio, which resulting mixture is fed to the wafer cleaning vessel.

    5.
    发明专利
    未知

    公开(公告)号：DE69834856D1

    公开(公告)日：2006-07-27

    申请号：DE69834856

    申请日：1998-02-13

    Applicant: IBM ,  INFINEON TECHNOLOGIES AG

    Inventor： COHEN SUSAN ,  COOPER EMMANUEL I ,  PENNER KLAUS ,  RATH DAVID L ,  SRIVASTAVA KAMALESH K

    IPC: H01L21/304 ,  H01L21/306 ,  B08B3/12 ,  H01L21/00

    Abstract: An efficient cleaning process of microelectronics devices requires lower levels of megasonic power, lower temperature and much lower concentrations of chemicals. The method controls the effectiveness of megasonics-assisted cleaning of microelectronics devices by securing a gas concentration level in the cleaning solution, such that at the process temperature the solution is partially saturated with the gas. The gas concentration can be controlled either at the plan-wide level or, preferably, at the point of use. In the latter case, two water supply inputs are provided, one of vacuum-degassed water and the other of gas-saturated water. Process water in the desired gas concentration is then obtained by mixing water from the two sources in an appropriate ratio, which resulting mixture is fed to the wafer cleaning vessel.

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