-
公开(公告)号:FR2363892A1
公开(公告)日:1978-03-31
申请号:FR7722460
申请日:1977-07-13
Applicant: IBM
Inventor: KOOPMAN NICHOLAS G , TOTT PAUL A
IPC: H01L23/34 , H01L23/373 , H01L23/40 , H01L23/433 , H01L23/46 , H01L23/36
-
公开(公告)号:CA2084685A1
公开(公告)日:1991-12-20
申请号:CA2084685
申请日:1990-10-16
Applicant: IBM
Inventor: AGARWALA BIRENDRA N , AHSAN AZIZ M , BROSS ARTHUR , CHADURJIAN MARK F , KOOPMAN NICHOLAS G , LEE LI-CHUNG , PUTTLITZ KARL J , RAY SUDIPTA K , RYAN JAMES G , SCHAEFER JOSEPH G , SRIVASTAVA KAMALESH K , TOTTA PAUL A , WALTON ERICK G , WIRSING ADOLF E
IPC: H01L21/60 , H01L23/485 , H05K3/34
Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.
-
公开(公告)号:FR2363891A1
公开(公告)日:1978-03-31
申请号:FR7723001
申请日:1977-07-21
Applicant: IBM
Inventor: KOOPMAN NICHOLAS G
IPC: H01L23/34 , H01L23/373 , H01L23/40 , H01L23/433
Abstract: A method for making a circuit package which exhibits an excellent heat transfer path from a semiconductor chip or other heat generating device to the heat sink can or cover of the package. A heat conducting pad is placed in proximate relationship to either the heat sink or to a surface of the chip and is metallurgically bonded to the other. In one of the preferred embodiments a low melting point solder, such as indium or an alloy thereof, is metallurgically bonded to the inside of the heat sink cover in a limited central region thereof. The solder is then positioned adjacent the chip and reflowed to substantially fill in the gap between the solder and the chip, but with no stress between the chip and the solder. The assembly exhibits excellent heat transfer from the chip to the cover and any associated heat dissipating structures. The preferred method involves the reflow of a mass of solder against the back side of the chip, which has previously been solder-bonded on the front side to conductors on the surface of an alumina substrate.
-
公开(公告)号:MX145056A
公开(公告)日:1982-01-04
申请号:MX17045577
申请日:1977-09-02
Applicant: IBM
Inventor: KOOPMAN NICHOLAS G
IPC: H01L23/34 , H01L23/373 , H01L23/40 , H01L23/433 , H05K3/34
Abstract: A method for making a circuit package which exhibits an excellent heat transfer path from a semiconductor chip or other heat generating device to the heat sink can or cover of the package. A heat conducting pad is placed in proximate relationship to either the heat sink or to a surface of the chip and is metallurgically bonded to the other. In one of the preferred embodiments a low melting point solder, such as indium or an alloy thereof, is metallurgically bonded to the inside of the heat sink cover in a limited central region thereof. The solder is then positioned adjacent the chip and reflowed to substantially fill in the gap between the solder and the chip, but with no stress between the chip and the solder. The assembly exhibits excellent heat transfer from the chip to the cover and any associated heat dissipating structures. The preferred method involves the reflow of a mass of solder against the back side of the chip, which has previously been solder-bonded on the front side to conductors on the surface of an alumina substrate.
-
公开(公告)号:CA1165468A
公开(公告)日:1984-04-10
申请号:CA395695
申请日:1982-02-05
Applicant: IBM
Inventor: BHATTACHARYA SOMNATH , HU SHIH-MING , KOOPMAN NICHOLAS G , OLDAKOWSKI CHESTER C
IPC: H01L21/60 , H01L23/485 , H01L23/532 , H05K3/30 , H01L21/88
Abstract: Solder Mound Formation On Substrates A controlled geometric configuration of contact pads for securing solder mounds to an integrated circuit chip which reduces cracking of brittle passivating coatings in fabrication of components. FI9-81-013
-
公开(公告)号:CA1122856A
公开(公告)日:1982-05-04
申请号:CA332645
申请日:1979-07-27
Applicant: IBM
Inventor: KOOPMAN NICHOLAS G , MARCOTTE VINCENT C , TEED STEPHEN
IPC: H05K3/34 , B23K1/00 , B23K35/26 , B23K35/36 , B23K35/363 , H01L21/60 , H01L23/485 , H01L23/488 , B23K1/02
Abstract: PROCESS FOR IN-SITU MODIFICATION OF SOLDER COMPOSITION Extraction of non-lead components (e.g. tin, indium, etc.) from solder joints with monocarboxylic acids of alkylated hydrophenanthrene nuclei to increase the lead content of the solder joints. FI9-78-003
-
公开(公告)号:CA1093699A
公开(公告)日:1981-01-13
申请号:CA285781
申请日:1977-08-30
Applicant: IBM
Inventor: KOOPMAN NICHOLAS G , TOTTA PAUL A
IPC: H01L23/34 , H01L23/373 , H01L23/40 , H01L23/433 , H05K1/04 , H05K3/10
Abstract: A circuit package exhibiting an excellent heat transfer path from a semiconductor chip or other heat-generating device to the heat-sink can or cover of the package. A heat-conducting pad is metallurgically bonded to either said cover or a surface of said device; the pad is also separably attached, but metallurgically unbonded, to the other. In one preferred embodiment, a readily deformable metal or alloy, such as indium, is metallurgically bonded to a limited central region of the heat sink cover. The deformable metal is separably attached to a major surface of the chip so that there is no stress between the chip or its joints and the solder during the electrical operation of the chip when it generates heat. The preferred method of fabrication involves the mechanical deformation of a mass of solder against the back side of the chip, after the solder has been metallurgically bonded to heat sink. The process may be accomplished either at high or low temperatures, depending upon the solder composition and the relative strength of the leads which join the chip to conductive lands on its supportive substrate.
-
公开(公告)号:CA2084685C
公开(公告)日:1996-01-16
申请号:CA2084685
申请日:1990-10-16
Applicant: IBM
Inventor: AGARWALA BIRENDRA N , AHSAN AZIZ M , BROSS ARTHUR , CHADURJIAN MARK F , KOOPMAN NICHOLAS G , LEE LI-CHUNG , PUTTLITZ KARL J , RAY SUDIPTA K , RYAN JAMES G , SCHAEFER JOSEPH G , SRIVASTAVA KAMALESH K , TOTTA PAUL A , WALTON ERICK G , WIRSING ADOLF E
IPC: H01L21/60 , H01L23/485 , H05K3/34 , H01L23/488 , H01L23/50
Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier (12) a pad (14) is formed on which a solder mass (16) is deposited and capped with a metal layer (19), thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass (26) on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.
-
公开(公告)号:IT1122873B
公开(公告)日:1986-04-30
申请号:IT2532679
申请日:1979-08-29
Applicant: IBM
Inventor: KOOPMAN NICHOLAS G , MARCOTTE VINCENT C , TEED STEPHEN
IPC: H05K3/34 , B23K1/00 , B23K35/26 , B23K35/36 , B23K35/363 , H01L21/60 , H01L23/485 , H01L23/488 , B23K
-
公开(公告)号:CA1083261A
公开(公告)日:1980-08-05
申请号:CA285782
申请日:1977-08-30
Applicant: IBM
Inventor: KOOPMAN NICHOLAS G
IPC: H01L23/34 , H01L23/373 , H01L23/40 , H01L23/433
Abstract: METHOD FOR MAKING CONDUCTION-COOLED CIRCUIT PACKAGE A method for making a circuit package which exhibits an excellent heat transfer path from a semiconductor chip or other heat generating device to the heat sink can or cover of the package. A heat conducting pad is placed in proximate relationship to either the heat sink or to a surface of the chip and is metallurgically bonded to the other. In one of the preferred embodiments a low melting point solder, such as indium or an alloy thereof, is metallurgically bonded to the inside of the heat sink cover in a limited central region thereof. The solder is then positioned adjacent the chip and reflowed to substantially fill in the gap between the solder and the chip, but with no stress between the chip and the solder. The assembly exhibits excellent heat transfer from the chip to the cover and any associated heat dissipating structures. The preferred method involves the reflow of a mass of solder against the back side of the chip, which has previously been solderbonded on the front side to conductors on the surface of an alumina substrate.
-
-
-
-
-
-
-
-
-