公开(公告)号：JP2002313798A

公开(公告)日：2002-10-25

申请号：JP2002052091

申请日：2002-02-27

Applicant: IBM

Inventor： DUNN JAMES S ,  HARAME DAVID L ,  JOHNSON JEFFREY B ,  ROBB A JOHNSON ,  LANZEROTTI LOUIS D ,  ST ONGE STEPHEN A

IPC: H01L21/331 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737

Abstract: PROBLEM TO BE SOLVED: To provide an epitaxial base bipolar transistor which has low base resistance and whose capacitance does not increase. SOLUTION: This epitaxial base bipolar transistor is provided with an epitaxial silicon layer on a single crystal semiconductor substrate 54, a raised emitter 64 on the surface of the semiconductor substrate, a raised extrinsic base 58e on the surface of the semiconductor substrate, an insulator 66 as a spacer between the raised emitter and raised extrinsic base, and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the semiconductor substrate. The emitter diffusion has an emitter diffusion junction depth, and the raised emitter extends to the surface of the semiconductor substrate and the raised extrinsic base extends to the surface of the semiconductor substrate. A difference of height between the surfaces of the emitter and base is less than 20% of the emitter diffusion junction depth.

公开(公告)号：JP2001332553A

公开(公告)日：2001-11-30

申请号：JP2001098276

申请日：2001-03-30

Applicant: IBM

Inventor： JAMES W ADKINSON ,  BALLANTINE ARNE W ,  MATTHEW D GULAGER ,  PETER J GASE ,  GILBERT JEFFREY D ,  SHU-JEN JEN ,  DANA K JOHNSON ,  ROBB A JOHNSON ,  MILES GLEN L ,  PETERSON KIRK D ,  JAMES J TOOMEY ,  TINA WAGNER

IPC: C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/318 ,  H01L21/331 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/092 ,  H01L29/73 ,  H01L29/737

Abstract: PROBLEM TO BE SOLVED: To provide a nitride film that has characteristics being more superior than a conventional nitride film obtained by the conventional PECVD or LPCVD onto a semiconductor substrate. SOLUTION: In the manufacturing process of a semiconductor device, a method is indicated, where the method includes a step for exposing the surface of the substrate to a rapid thermochemical vapor deposition(RTCVD). The nitride film obtained by the method has an etching-resistant property and high conformality, and an excellent barrier layer can be provided without changing the structure and processes of a conventional semiconductor device.