公开(公告)号：WO02099866A3

公开(公告)日：2003-08-28

申请号：PCT/EP0206916

申请日：2002-06-04

Applicant: IBM ,  COMPANIE IBM FRANCE

Inventor： BALLANTINE ARNE W ,  FALTERMEIER JONATHAN E ,  FLAITZ PHILIP L ,  GILBERT JEFFREY D ,  GLUSCHENKOV OLEG ,  HEENAN CAROL J ,  JAMMY RAJARAO

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/321 ,  H01L21/334 ,  H01L21/8234 ,  H01L29/51

CPC classification number: H01L21/28202 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/32105 ,  H01L21/823462 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66181

Abstract: Disclosed is a method to convert a stable silicon nitride film (101)covering a silicon substrate (100) into a stable silicon oxide film (102) with a low content of residual nitrogen in the resulting silicon oxide film. This is achieved by performing the steps of (i)providing a low pressure environment for the silicon nitride fim of between about l.33 X10 Pa(100 Torr) to about 13.3 Pa (0.1 Torr);(ii)introducing hydrogen and oxygen into said low pressure environment; and iii maintaining said low pressure environment at a temperature of about 600°C to about 1200 C° for a predetermined amount of time. This is an unexpectedand unique property of the in situ steam generation process since both silicon nitride and silicon oxide materials are chemically very stable compounds. Application of the claimed method to the art of microelectronic device fabrication, such as fabrication of on-chip dielectric capacitors and metal insulator semiconductor field effect transistors, is also disclosed.

Abstract translation: 公开了一种将覆盖硅衬底（100）的稳定氮化硅膜（101）转换成所得氧化硅膜中残留氮含量低的稳定氧化硅膜（102）的方法。 这通过以下步骤来实现：（i）为约13.3×10 4 Pa（100托）至约13.3Pa（0.1托）的氮化硅膜提供低压环境;（ii）引入氢 和氧气进入所述低压环境; 以及iii将所述低压环境保持在约600℃至约1200℃的温度下一段预定的时间。 这是原位蒸汽产生过程的意想不到的独特性质，因为氮化硅和氧化硅材料都是化学上非常稳定的化合物。 还公开了所要求保护的方法应用于微电子器件制造领域，例如制造片上电介质电容器和金属绝缘体半导体场效应晶体管。

公开(公告)号：JP2001332553A

公开(公告)日：2001-11-30

申请号：JP2001098276

申请日：2001-03-30

Applicant: IBM

Inventor： JAMES W ADKINSON ,  BALLANTINE ARNE W ,  MATTHEW D GULAGER ,  PETER J GASE ,  GILBERT JEFFREY D ,  SHU-JEN JEN ,  DANA K JOHNSON ,  ROBB A JOHNSON ,  MILES GLEN L ,  PETERSON KIRK D ,  JAMES J TOOMEY ,  TINA WAGNER

IPC: C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/318 ,  H01L21/331 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/092 ,  H01L29/73 ,  H01L29/737

Abstract: PROBLEM TO BE SOLVED: To provide a nitride film that has characteristics being more superior than a conventional nitride film obtained by the conventional PECVD or LPCVD onto a semiconductor substrate. SOLUTION: In the manufacturing process of a semiconductor device, a method is indicated, where the method includes a step for exposing the surface of the substrate to a rapid thermochemical vapor deposition(RTCVD). The nitride film obtained by the method has an etching-resistant property and high conformality, and an excellent barrier layer can be provided without changing the structure and processes of a conventional semiconductor device.

公开(公告)号：JP2001319888A

公开(公告)日：2001-11-16

申请号：JP2001095081

申请日：2001-03-29

Applicant: IBM

Inventor： BALLANTINE ARNE W ,  ELLIS-MONAGHAN JOHN J ,  FURUKAWA TOSHIHARU ,  GLENN R MILLER ,  SLINKMAN JAMES A ,  GILBERT JEFFREY D

IPC: H01L21/22 ,  C21D1/04 ,  H01L21/225 ,  H01L21/26 ,  H01L21/265 ,  H01L21/324 ,  H01L21/326

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a desired junction profile in a semiconductor device. SOLUTION: At least one dopant is thrown into a semiconductor substrate. At the same time, the semiconductor substrate and at least one dopant are annealed exposing the semiconductor substrate to an electric field thus diffusing at least one dopant into the semiconductor substrate.