公开(公告)号：DE10319157A1

公开(公告)日：2004-11-25

申请号：DE10319157

申请日：2003-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PROELL MANFRED ,  SCHROEDER STEPHAN ,  AUGE JUERGEN ,  PFEIFFER JOHANN

IPC: G01R19/165 ,  G01R31/28

Abstract: Integrated circuit has a voltage monitoring circuit (1) for monitoring the burn-in voltage during a burn-in process. A reference voltage (Vref) is provided that represents a lower limit for the burn-in voltage. A comparison voltage (VVGL), which is dependent on the internal burn-in voltage (VINT), is applied to a comparator (4) in conjunction with the reference voltage. The output of the comparator is a burn-in signal (SBI) that indicates whether the burn-in voltage is below or above a threshold defined by the reference voltage. An independent claim is made for a method for monitoring an integrated circuit burn-in voltage.

公开(公告)号：DE10358357A1

公开(公告)日：2005-07-21

申请号：DE10358357

申请日：2003-12-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHROEDER STEPHAN ,  PROELL MANFRED ,  AUGE JUERGEN ,  HUBER THOMAS

IPC: G01K1/02 ,  G01K7/01 ,  H01L23/544 ,  H01L21/66 ,  H01L21/60

Abstract: Detector comprises integrated semiconductor chip (1) with solderable contact(s) (2) or external contact(s) (14d), conductively linked to temperature sensor (3), picking-up measuring magnitude allocated to temperature of chip. Processor (4,5) includes A/D converter (5), coupled to temperature sensor for converting measuring magnitude into signal, representing temperature load that can be stored. There is at least one voltage supply source (10) and data memory (6), with all connections and process steps specified. Independent claims are included for method for detecting temperature load.

公开(公告)号：DE102004022327A1

公开(公告)日：2005-12-01

申请号：DE102004022327

申请日：2004-05-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AUGE JUERGEN ,  PROELL MANFRED ,  SCHROEPPEL FRANK ,  KLIEWER JOERG

IPC: G11C7/00 ,  G11C29/00 ,  G11C29/48

Abstract: An integrated semiconductor memory includes a memory cell array with at least one memory cell, in which a data value is stored, and an evaluation circuit with a counter. During a test of the integrated semiconductor memory, a counter reading of the counter is altered if the data value stored in the memory cell deviates from a desired value. A threshold value is predefined by a control circuit. A programming circuit compares the threshold value on the input side with the instantaneous counter reading of the counter. If the counter reading of the counter exceeds the threshold value, a programming element changes from a first programming state to a second programming state. After the conclusion of the test, the state of the programming element is read out via an output terminal. This scheme makes it possible to deduce a possible cause of failure of the integrated semiconductor memory.

公开(公告)号：DE10358038B4

公开(公告)日：2006-05-18

申请号：DE10358038

申请日：2003-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEIDER RALF ,  SCHROEDER STEPHAN ,  PROELL MANFRED ,  AUGE JUERGEN

IPC: G11C11/407 ,  G11C7/00 ,  G11C16/04 ,  G11C29/44

Abstract: An integrated circuit includes a programming circuit ( 10 ) for generating programming signals (PS 1 , . . . , PS 4 ) with a first input terminal (E 1 ) for applying a control voltage (ES), a second input terminal (E 2 ) for applying a reference voltage (Vref), a storage circuit ( 30 ) with programmable switches ( 35, . . . , 38 ) and output terminals (A 1 , . . . , A 4 ). The programming circuit in each case generates a programming signal (PS 1 , . . . , PS 4 ) when the control voltage (ES) exceeds a predefined threshold voltage formed from the reference voltage. The number of programming signals (PS 1 , . . . , PS 4 ) is dependent on the magnitude of the threshold voltage exceeded by the control voltage (ES). The programming signals are used for programming the programmable switches ( 35, . . . , 38 ). The programming state of the programmable switches can be read out via the output terminals (A 1 , . . . , A 4 ) of the integrated circuit. The integrated circuit enables the storage of external operating parameters of the integrated circuit.

公开(公告)号：DE102004022327B4

公开(公告)日：2006-04-27

申请号：DE102004022327

申请日：2004-05-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AUGE JUERGEN ,  PROELL MANFRED ,  SCHROEPPEL FRANK ,  KLIEWER JOERG

IPC: G11C29/00 ,  G11C7/00 ,  G11C29/48

Abstract: An integrated semiconductor memory includes a memory cell array with at least one memory cell, in which a data value is stored, and an evaluation circuit with a counter. During a test of the integrated semiconductor memory, a counter reading of the counter is altered if the data value stored in the memory cell deviates from a desired value. A threshold value is predefined by a control circuit. A programming circuit compares the threshold value on the input side with the instantaneous counter reading of the counter. If the counter reading of the counter exceeds the threshold value, a programming element changes from a first programming state to a second programming state. After the conclusion of the test, the state of the programming element is read out via an output terminal. This scheme makes it possible to deduce a possible cause of failure of the integrated semiconductor memory.

公开(公告)号：DE102004044150A1

公开(公告)日：2006-03-30

申请号：DE102004044150

申请日：2004-09-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHROEDER STEPHAN ,  PROELL MANFRED ,  AUGE JUERGEN ,  FISCHER HELMUT

IPC: G11C29/06

公开(公告)号：DE10358038A1

公开(公告)日：2005-07-21

申请号：DE10358038

申请日：2003-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEIDER RALF ,  SCHROEDER STEPHAN ,  PROELL MANFRED ,  AUGE JUERGEN

IPC: G11C7/00 ,  G11C11/407 ,  G11C16/04 ,  G11C29/44

Abstract: An integrated circuit includes a programming circuit ( 10 ) for generating programming signals (PS 1 , . . . , PS 4 ) with a first input terminal (E 1 ) for applying a control voltage (ES), a second input terminal (E 2 ) for applying a reference voltage (Vref), a storage circuit ( 30 ) with programmable switches ( 35, . . . , 38 ) and output terminals (A 1 , . . . , A 4 ). The programming circuit in each case generates a programming signal (PS 1 , . . . , PS 4 ) when the control voltage (ES) exceeds a predefined threshold voltage formed from the reference voltage. The number of programming signals (PS 1 , . . . , PS 4 ) is dependent on the magnitude of the threshold voltage exceeded by the control voltage (ES). The programming signals are used for programming the programmable switches ( 35, . . . , 38 ). The programming state of the programmable switches can be read out via the output terminals (A 1 , . . . , A 4 ) of the integrated circuit. The integrated circuit enables the storage of external operating parameters of the integrated circuit.