公开(公告)号：DE10345247B4

公开(公告)日：2007-10-04

申请号：DE10345247

申请日：2003-09-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STECHER MATTHIAS ,  HOFMANN RENATE ,  BUSCH JOERG

IPC: H01L23/28 ,  H01L23/31 ,  H01L23/482 ,  H01L23/485 ,  H01L23/528

Abstract: Semiconductor component comprises a semiconductor body (2) having a semiconductor base surface (1), a pressing composition (3) for sealing the body and a claw structure for mechanically holding the pressing composition with the base surface. An independent claim is also included for a process for the production of a semiconductor component.

公开(公告)号：DE102004057238B4

公开(公告)日：2007-10-04

申请号：DE102004057238

申请日：2004-11-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOELLNER REINHARD ,  HARTNER WALTER ,  BUSCH JOERG

IPC: H01L23/28 ,  H01L23/52

公开(公告)号：DE102005020806A1

公开(公告)日：2006-11-23

申请号：DE102005020806

申请日：2005-05-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  BUSCH JOERG ,  GOELLNER REINHARD

IPC: H01L23/28 ,  H01L23/485 ,  H01L23/522

Abstract: The chip has an intermediate oxide layer (1) formed between an upper conductor consisting of aluminum and a lower conductor, and a silicon oxide layer (3) provided on the intermediate oxide layer (1) and the upper conductor (2). A passivation layer (5) made of silicon carbide having high breaking point/tensile strength is provided on the silicon oxide layer, where the thickness of the passivation layer is 100-1,000 nanometer.

公开(公告)号：DE102004057238A1

公开(公告)日：2006-06-08

申请号：DE102004057238

申请日：2004-11-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOELLNER REINHARD ,  HARTNER WALTER ,  BUSCH JOERG

IPC: H01L23/28 ,  H01L23/52

Abstract: Semiconductor component comprises a passivation layer (6) over a semiconductor body (1) with a crack-forming structure (10,11) between them that encourages formation of cracks at defined positions (14) within the passivation layer when mechanical stresses arise within the layer.

公开(公告)号：DE102013108704A1

公开(公告)日：2014-02-27

申请号：DE102013108704

申请日：2013-08-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BUSCH JOERG ,  GATTERBAUER JOHANN ,  WEIDGANS BERNHARD

IPC: H01L21/60 ,  H01L21/56 ,  H01L21/58 ,  H01L23/488 ,  H01L23/50

Abstract: Es wird ein Verfahren (400) zum Herstellen einer Metallpadstruktur eines Die bereitgestellt, wobei das Verfahren Folgendes beinhaltet: Ausbilden eines Metallpads zwischen Kapselungsmaterial des Die, wobei das Metallpad und das Kapselungsmaterial durch einen Spalt voneinander getrennt sind (410); und Ausbilden von zusätzlichem Material in dem Spalt, um mindestens einen Teil des Spalts zu verengen (420).

公开(公告)号：DE102004036140A1

公开(公告)日：2006-03-23

申请号：DE102004036140

申请日：2004-07-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NELLE PETER ,  HOFMANN RENATE ,  BUSCH JOERG ,  EDTMAIR ALFRED ,  SCHNEEGANS MANFRED ,  STECHER MATTHIAS

IPC: H01L23/48 ,  H01L23/28 ,  H01L23/52

公开(公告)号：DE10345247A1

公开(公告)日：2005-05-19

申请号：DE10345247

申请日：2003-09-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STECHER MATTHIAS ,  HOFMANN RENATE ,  BUSCH JOERG

IPC: H01L23/31 ,  H01L23/482 ,  H01L23/528 ,  H01L23/28 ,  H01L23/485

Abstract: Semiconductor component comprises a semiconductor body (2) having a semiconductor base surface (1), a pressing composition (3) for sealing the body and a claw structure for mechanically holding the pressing composition with the base surface. An independent claim is also included for a process for the production of a semiconductor component.