公开(公告)号：JP2006223309A

公开(公告)日：2006-08-31

申请号：JP2006043178

申请日：2006-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DERTINGER STEPHAN ,  KLUEHR MARCO ,  HANEDER THOMAS

IPC: C12N15/09 ,  C12M1/00 ,  C12P19/34 ,  C12Q1/68

Abstract: PROBLEM TO BE SOLVED: To provide a method for amplifying a nucleic acid in high accuracy and in high repeatability, and to provide an apparatus therefor. SOLUTION: This method for amplifying the nucleic acid in the holes 2 of a macroporous support comprises (a) a process for supplying the prescribed components of a reaction mixture suitable for the amplification reaction to the first region having at least two holes 2 of the support and binding the components of the reaction mixture to the hole walls 1 of the support through non-covalent bonds to form a reaction region on the surfaces of the support, wherein the many separated holes 2 having diameters of 500 nm to 100 μm and a depth : opening aspect ratio of at least 10:1 are dispersed in the first surface and the second surface in a density of 10 4 to 10 8 /cm 2 , (b) a process for adding a sample containing the components of the reaction mixture required for the performance of the amplification reaction to the whole support, (c) a process for performing the amplification reaction, and (d) a process for detecting at least one amplification product. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：AT279259T

公开(公告)日：2004-10-15

申请号：AT02754726

申请日：2002-06-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRITZ MICHAELA ,  DERTINGER STEPHAN ,  FUCHS KARIN ,  HANEDER THOMAS ,  HANKE HANS-CHRISTIAN ,  JENKNER MARTIN ,  LEHMANN VOLKER ,  PAULUS CHRISTIAN

IPC: G01N37/00 ,  B01J19/00 ,  B01L3/00 ,  B01L3/02 ,  B81B1/00 ,  G01N35/10

Abstract: An apparatus, in which at least one pipette in the form of a through-hole with a predetermined diameter is formed in a substrate, with a rim of the through-hole projecting by a predetermined amount from an adjacent surface of the substrate.

公开(公告)号：DE10255599A1

公开(公告)日：2004-04-22

申请号：DE10255599

申请日：2002-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LUYKEN JOHANNES ,  HANEDER THOMAS ,  HOFMANN FRANZ ,  FRITZ MICHAELA ,  HANKE HANS-CHRISTIAN ,  DERTINGER STEPHAN ,  MARTIN ALFRED ,  LEHMANN VOLKER

IPC: H01L31/102

公开(公告)号：DE102008034574B4

公开(公告)日：2017-07-27

申请号：DE102008034574

申请日：2008-07-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DERTINGER STEPHAN ,  MARTIN ALFRED ,  HASLER BARBARA ,  SOMMER GRIT ,  BINDER FLORIAN

IPC: H01L23/50 ,  H01L21/60

Abstract: Integrierte Schaltung mit einer Halbleiteranordnung, umfassend: ein Halbleitersubstrat; ein metallisches Element; und eine zwischen dem Halbleitersubstrat und dem metallischen Element angeordnete kohlenstoffbasierte Barrierenschicht, wobei die kohlenstoffbasierte Barrierenschicht aus polykristallinem Kohlenstoff hergestellt ist.

公开(公告)号：DE102007019552A1

公开(公告)日：2008-10-30

申请号：DE102007019552

申请日：2007-04-25

Applicant: QIMONDA AG ,  INFINEON TECHNOLOGIES AG

Inventor： DERTINGER STEPHAN ,  MARTIN ALFRED ,  HASLER BARBARA ,  SOMMER GRIT ,  BINDER FLORIAN

IPC: H01L21/60 ,  H01L23/50

Abstract: A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one channel includes a first cross-sectional area at a first location and a second cross-sectional area at a second location. An electrically conductive first material is disposed in the at least one channel.

公开(公告)号：DE10217569A1

公开(公告)日：2003-11-13

申请号：DE10217569

申请日：2002-04-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DERTINGER STEPHAN ,  FUCHS KARIN ,  HANEDER THOMAS ,  LEHMANN VOLKER ,  FRITZ MICHAELA ,  MARTIN ALFRED ,  MAERZ REINHARD

IPC: B01J19/00 ,  B01L3/00 ,  C30B33/00 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N33/543 ,  B81B1/00 ,  B81C1/00 ,  C12Q1/68 ,  C12Q1/00 ,  G01N33/50 ,  B01J19/12

Abstract: Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 mum distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

公开(公告)号：DE10206420A1

公开(公告)日：2003-08-28

申请号：DE10206420

申请日：2002-02-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRITZ MICHAELA ,  DERTINGER STEPHAN ,  LEHMANN VOLKER ,  HANEDER THOMAS

IPC: G01N33/543 ,  G01N33/50 ,  C12M1/14 ,  C12M1/40

Abstract: A device comprising a flat macroporous carrier (10) with a periodic or stochastic arrangement of through-pores (11) of diameter 0.5-100 micrometers, printed on one side with an organic material to give regions of different hydrophilicity, with at least one pore being completely surrounded, is new. An Independent claim is also included for production of the device by applying print to one side of the carrier.

公开(公告)号：DE102007019552B4

公开(公告)日：2009-12-17

申请号：DE102007019552

申请日：2007-04-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DERTINGER STEPHAN ,  MARTIN ALFRED ,  HASLER BARBARA ,  SOMMER GRIT ,  BINDER FLORIAN

IPC: H01L21/60 ,  H01L23/12 ,  H01L23/50

Abstract: A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one channel includes a first cross-sectional area at a first location and a second cross-sectional area at a second location. An electrically conductive first material is disposed in the at least one channel.

公开(公告)号：DE102008034574A1

公开(公告)日：2009-02-26

申请号：DE102008034574

申请日：2008-07-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DERTINGER STEPHAN ,  MARTIN ALFRED ,  HASLER BARBARA ,  SOMMER GRIT ,  BINDER FLORIAN

IPC: H01L23/50 ,  H01L21/60

Abstract: An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.

公开(公告)号：DE102004031167A1

公开(公告)日：2006-01-12

申请号：DE102004031167

申请日：2004-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARTIN ALFRED ,  DERTINGER STEPHAN ,  HANEDER THOMAS

IPC: B01J19/00 ,  C12Q1/68