公开(公告)号：DE10014919C2

公开(公告)日：2002-12-12

申请号：DE10014919

申请日：2000-03-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KNOBLOCH JUERGEN ,  ERGENZINGER KLAUS

IPC: G03F1/00 ,  G03F1/14 ,  G03F7/20

公开(公告)号：DE10006952A1

公开(公告)日：2001-08-30

申请号：DE10006952

申请日：2000-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRIEDRICH CHRISTOPH ,  GRIESINGER UWE ,  GANS FRITZ ,  ERGENZINGER KLAUS ,  MAURER WILHELM ,  PFORR RAINER ,  KNOBLOCH JUERGEN ,  WIDMANN DIETRICH ,  CZECH GUENTHER ,  FUELBER CARSEN

IPC: G03F1/00 ,  G03F7/20

Abstract: Mask set comprises a first chrome-less phase mask (1) for producing exposed and non-exposed regions on a photolaquer in a minimal structure and a second mask (2) for dividing the non-exposed regions by exposing partial regions of the regions non-exposed by the first phase mask. An Independent claim is also claimed for a process for producing structures acting as resist masks (3). Preferred Features: The second mask is a chrome-on-glass mask or a halftone mask. The exposed and non-exposed regions produced by the first mask are formed in straight lines. Both masks each have a number of individual structures.

公开(公告)号：DE10006952C2

公开(公告)日：2002-05-16

申请号：DE10006952

申请日：2000-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRIEDRICH CHRISTOPH ,  GRIESINGER UWE ,  GANS FRITZ ,  ERGENZINGER KLAUS ,  MAURER WILHELM ,  PFORR RAINER ,  KNOBLOCH JUERGEN ,  WIDMANN DIETRICH ,  CZECH GUENTHER ,  FUELBER CARSEN

IPC: G03F1/00 ,  G03F7/20

公开(公告)号：DE10014919A1

公开(公告)日：2002-01-03

申请号：DE10014919

申请日：2000-03-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KNOBLOCH JUERGEN ,  ERGENZINGER KLAUS

IPC: G03F1/00 ,  G03F1/14 ,  G03F7/20

Abstract: The photolithographic mask has a region (9a) with alternating phase mask for first exposure of the photosensitive layer (4) and a region (9b) with trim mask for second exposure after movement of the carrier (10). An independent claim is included for a method of carrying out a photolithographic process for manufacturing of integrated circuits.