1.
    发明专利
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    公开(公告)号:DE10042929A1

    公开(公告)日:2002-03-21

    申请号:DE10042929

    申请日:2000-08-31

    Abstract: A raw layout (10) for manufacturing a circuit structure is provided using a lithographic technique. From the layout, a pattern (56) for a phase-shift mask and a pattern for a trim mask are formed. The pattern for the phase-shift mask is corrected in a first correction step (60). The pattern for the trim mask is corrected using the corrected pattern for the phase shift mask. Independent claims are also included for: (a) a data processing apparatus for correcting patterns (b) a program for producing corrected patterns (c) an integrated circuit structure (d) a phase-shift mask (e) a trim mask

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