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公开(公告)号:DE10042929A1
公开(公告)日:2002-03-21
申请号:DE10042929
申请日:2000-08-31
Applicant: INFINEON TECHNOLOGIES AG
Inventor: MAURER WILHELM , ZIMMERMANN RAINER , AHRENS MARCO , KNOBLOCH JUERGEN
IPC: G03F1/00
Abstract: A raw layout (10) for manufacturing a circuit structure is provided using a lithographic technique. From the layout, a pattern (56) for a phase-shift mask and a pattern for a trim mask are formed. The pattern for the phase-shift mask is corrected in a first correction step (60). The pattern for the trim mask is corrected using the corrected pattern for the phase shift mask. Independent claims are also included for: (a) a data processing apparatus for correcting patterns (b) a program for producing corrected patterns (c) an integrated circuit structure (d) a phase-shift mask (e) a trim mask
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公开(公告)号:DE10006952A1
公开(公告)日:2001-08-30
申请号:DE10006952
申请日:2000-02-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor: FRIEDRICH CHRISTOPH , GRIESINGER UWE , GANS FRITZ , ERGENZINGER KLAUS , MAURER WILHELM , PFORR RAINER , KNOBLOCH JUERGEN , WIDMANN DIETRICH , CZECH GUENTHER , FUELBER CARSEN
Abstract: Mask set comprises a first chrome-less phase mask (1) for producing exposed and non-exposed regions on a photolaquer in a minimal structure and a second mask (2) for dividing the non-exposed regions by exposing partial regions of the regions non-exposed by the first phase mask. An Independent claim is also claimed for a process for producing structures acting as resist masks (3). Preferred Features: The second mask is a chrome-on-glass mask or a halftone mask. The exposed and non-exposed regions produced by the first mask are formed in straight lines. Both masks each have a number of individual structures.
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公开(公告)号:DE10006952C2
公开(公告)日:2002-05-16
申请号:DE10006952
申请日:2000-02-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor: FRIEDRICH CHRISTOPH , GRIESINGER UWE , GANS FRITZ , ERGENZINGER KLAUS , MAURER WILHELM , PFORR RAINER , KNOBLOCH JUERGEN , WIDMANN DIETRICH , CZECH GUENTHER , FUELBER CARSEN
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