中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.023 seconds)

    PHOTOLITHOGRAPHIC MASK
    1.
    发明申请
    PHOTOLITHOGRAPHIC MASK 审中-公开
    光刻掩膜

    公开(公告)号：WO0241076A3

    公开(公告)日：2003-01-03

    申请号：PCT/DE0104263

    申请日：2001-11-14

    Applicant: INFINEON TECHNOLOGIES AG ,  GRIESINGER UWE ,  HENNIG MARIO ,  KNOBLOCH JUERGEN ,  PFORR RAINER ,  VORWERK MANUEL

    Inventor： GRIESINGER UWE ,  HENNIG MARIO ,  KNOBLOCH JUERGEN ,  PFORR RAINER ,  VORWERK MANUEL

    IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F1/14

    CPC classification number: G03F7/70441 ,  G03F1/29 ,  G03F7/70433

    Abstract: According to the invention, auxiliary openings (2) are allocated to the openings (1) on a mask which are to be transferred onto a wafer. Said auxiliary openings have a phase shifting characteristic of preferably between 160 DEG and 200 DEG in relation to the openings (1), as well as a cross-section which is less than the limit dimension (31) for the printing of the projection device, so that the auxiliary openings (2) themselves cannot be printed onto the wafer. At the same time, however, they strengthen the contrast of the aerial image of an associated insulated or semi-insulated opening (1) on the wafer in particular. According to one form of embodiment, the distance of the auxiliary openings (2) from the opening (1) is greater than the resolution limit of the projection device, the opening being less than the coherence length of the light used for projection. The effect of the auxiliary openings consists of the phase-related use of the optical proximity effect. If the auxiliary openings (2) are arranged in a preferred direction, this effect can be used on quadratic openings (1) on the mask to produce elliptic structures (1') on a wafer. The result is a considerable widening of the process window for the projection of substrate contacting planes onto a wafer.

    Abstract translation: 在掩模上的晶片上要传送开口（1）与辅助开口相关联的（2）。 这些具有优选为160°至200℃底层相移特性相对于所述孔（1）之间，以及一个位于该投影装置的横截面（21）的打印的限制尺寸（31）下方，使得辅助开口（2）本身不将 晶圆是geprintet。 同时提高了空间像的对比度，特别是相关联的晶片上的绝缘或半绝缘的开口（1）。 在一个实施例中，辅助开口（2）具有一个位于上述从开口（1）的投影装置的距离的分辨率极限，但其比用于投影的光的相干长度小。 它们的作用是在光学邻近效应的相位相关的利用率，从而可以在掩模在正方形开口的晶片上产生椭圆结构（1“）设定在一个优选的方向上的辅助开口（2）当被利用（1）。 其结果是在投影，特别Substratkontaktierungsebenen到晶片上的处理窗口的显著放大图。

    ALTERNATING PHASE MASK
    2.
    发明申请
    ALTERNATING PHASE MASK 审中-公开
    交替相位掩模

    公开(公告)号：WO0140868A3

    公开(公告)日：2001-12-06

    申请号：PCT/DE0004136

    申请日：2000-11-22

    Applicant: INFINEON TECHNOLOGIES AG ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD ,  PFORR RAINER

    Inventor： FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD ,  PFORR RAINER

    IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027

    CPC classification number: G03F1/30

    Abstract: The invention relates to an alternating phase mask (1) having a branched structure consisting of two opaque segments. Two transparent surfaces segments (5a, 5b) are arranged on both sides of said segments or the components thereof respectively. The surface segments are provided with phases that are displaced by 180 DEG +/- DELTA alpha , whereby DELTA alpha is not more than 25 DEG . The surface segments (5a, 5b) are separated by at least one transparent surface boundary segment (6) whose phase is situated between the phases of the adjacent surface segments (5a, 5b).

    Abstract translation: 本发明涉及具有由两个不透明段组成的分支结构的交替相位掩模（1）。 在部分或其部分的两侧上布置两个透明表面部分（5a，5b），其具有相移180°+/-Δα的相位，其中Δα最大值为25°。 表面部分（5a，5b）由至少一个透明表面边界部分（6）分开，其相位位于相邻表面部分（5a，5b）的相位之间。

    4.
    发明专利
    未知

    公开(公告)号：DE10140354A1

    公开(公告)日：2003-03-06

    申请号：DE10140354

    申请日：2001-08-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： GRIESINGER UWE

    IPC: G03F1/00 ,  G03F7/20

    Abstract: The present invention provides a method for producing a photomask (1), which has the following steps: provision of a mask blank with a substrate (1a) and a masking layer (1b) applied thereto; whole-area resist-coating of the mask blank with a photoresist; performance of a raster scan exposure of the photoresist in accordance with a predetermined photomask pattern in a pattern region (MB), which is separated from an edge (1c) of the mask blank by a peripheral edge region (RB); performance of the raster scan exposure in at least one peripheral partial region of the edge region (RB), which adjoins the edge (1c) on one side; development of the exposed photoresist; etching of the masking layer (1b); and removal of the photoresist. The present invention also provides a corresponding photomask.

    5.
    发明专利
    未知

    公开(公告)号：DE59912166D1

    公开(公告)日：2005-07-14

    申请号：DE59912166

    申请日：1999-09-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： GRASSMANN ANDREAS ,  FRIEDRICH CHRISTOPH ,  GRIESINGER UWE ,  PFORR RAINER ,  WIDMANN DIETRICH

    IPC: G03F1/00 ,  G03F7/20

    Abstract: The invention relates to a phase shift mask for lithographically producing small structures at the limit of a resolution that is predetermined by the wavelength of the exposure radiation. The phase shift mask has first regions A and second regions B that effect a phase-shift relative to the first regions. The second regions are arranged beside the first regions for producing a sudden phase shift along the boundaries between the first and the second regions. Individual first regions touch one another via corners at points, at which the second regions also touch one another via corners. The result is that the boundaries between first and second regions merge at these points and these points are opaque to the radiation. The invention makes it possible to expose extremely small contact holes with just a single exposure and thus leads to a reduction of costs in the fabrication of integrated semiconductor circuits.

    7.
    发明专利
    未知

    公开(公告)号：DE19957542C2

    公开(公告)日：2002-01-10

    申请号：DE19957542

    申请日：1999-11-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： PFORR RAINER ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD

    IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027 ,  G03F1/14

    Abstract: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±Delta alpha, whereby Delta alpha a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

    9.
    发明专利
    未知

    公开(公告)号：DE19957542A1

    公开(公告)日：2001-07-05

    申请号：DE19957542

    申请日：1999-11-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： PFORR RAINER ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD

    IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027 ,  G03F1/14

    Abstract: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±Delta alpha, whereby Delta alpha a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

Patent Agency Ranking