Abstract:
Disclosed is, among other things, a method in which a workpiece (14) is fastened to a workpiece support (12) with the aid of connecting means (18, 20), the workpiece (14) and the workpiece support (12) being joined together using an annular connecting means (18, 20). The resulting compound is machined, whereupon the machined workpiece (14) is separated from the workpiece support (12), making it possible to create a particularly simple machining process.
Abstract:
Disclosed is, among other things, a method in which a workpiece (14) is fastened to a workpiece support (12) with the aid of connecting means (18, 20), the workpiece (14) and the workpiece support (12) being joined together using an annular connecting means (18, 20). The resulting compound is machined, whereupon the machined workpiece (14) is separated from the workpiece support (12), making it possible to create a particularly simple machining process.
Abstract:
Eine Trägerplatte zur Aufnahme einer Halbleiterscheibe weist eine umlaufende Erhebung auf. Die Erhebung ist derart an der Trägerplatte angeordnet, dass sie während der Aufnahme der Halbleiterscheibe auf einem Randbereich der Halbleiterscheibe liegt.
Abstract:
The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area. The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area and in comparison to the inner area occupies small portion of the semiconductor wafer. At the first surface a semiconductor element in the inner area is formed. An independent claim is included for a method for the production of semiconductor wafer.