Method for machining a workpiece on a workpiece support
    2.
    发明申请
    Method for machining a workpiece on a workpiece support 审中-公开
    一种用于编辑工件一种用于在工件上加工工件的方法spport工件载

    公开(公告)号:WO2005101459B1

    公开(公告)日:2006-06-29

    申请号:PCT/EP2005051493

    申请日:2005-04-01

    Abstract: Disclosed is, among other things, a method in which a workpiece (14) is fastened to a workpiece support (12) with the aid of connecting means (18, 20), the workpiece (14) and the workpiece support (12) being joined together using an annular connecting means (18, 20). The resulting compound is machined, whereupon the machined workpiece (14) is separated from the workpiece support (12), making it possible to create a particularly simple machining process.

    Abstract translation: 通过连接装置(18,20),来描述,除其他外,一种方法,其中,固定在工件支承件(12)的工件(14),其中,所述工件(14),并通过一个环形连接装置在工件支架(12)(18 ,20)连接在一起。 将得到的复合物(10)进行处理。 然后,从工件支架(12)加工工件(14)断开。 其结果是一种特别简单的加工方法。

    Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area

    公开(公告)号:DE102006015781A1

    公开(公告)日:2007-10-11

    申请号:DE102006015781

    申请日:2006-04-04

    Abstract: The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area. The semiconductor wafer useful for the production of electronic components, comprises inner area (2) arranged in the middle of the wafer, outer area (3), and first surface (4), which is formed of a semiconductor element in the inner area. The outer area extends from a rotating edge of the semiconductor wafer to the inner area. The inner area and the outer area are formed from the single piece semiconductor material. A step forms a transition from the outer area to the inner area. The outer area is thicker than the inner area and in comparison to the inner area occupies small portion of the semiconductor wafer. At the first surface a semiconductor element in the inner area is formed. An independent claim is included for a method for the production of semiconductor wafer.

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