公开(公告)号：DE10119145C1

公开(公告)日：2002-11-21

申请号：DE10119145

申请日：2001-04-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  HEISMEIER MICHAEL ,  HOFSAES MARKUS ,  NOELSCHER CHRISTOPH

IPC: G03F1/00 ,  G03F7/20

Abstract: A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.

公开(公告)号：DE102005005591B3

公开(公告)日：2006-07-20

申请号：DE102005005591

申请日：2005-02-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  MEYER DIRK ,  KOEHLE RODERICK ,  NOELSCHER CHRISTOPH ,  HEISMEIER MICHAEL ,  THIELE JOERG ,  LUDWIG BURKHARD

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20

Abstract: The method involves dividing a pattern of a circuit design iteratively, into corresponding base patterns, to classify the parts of the pattern into the structural components which complies with the base patterns. Further base patterns are provided for the parts which are not classified. The geometries of the structural components are optimized and the optimized base patterns are inserted into the circuit design. An independent claim is also included for a use of a structural component geometry optimizing method for the production of a photomask.

公开(公告)号：DE10129202C1

公开(公告)日：2002-09-26

申请号：DE10129202

申请日：2001-06-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  HEISMEIER MICHAEL ,  HOFSAES MARKUS ,  NOELSCHER CHRISTOPH

IPC: G03F1/00 ,  G03F1/14

Abstract: The mask has a T-shaped structure (10) with first and second opaque segments (O1,O2). The second segment abuts the middle of a long side of the rectangular first segment to form a T-shape. Transparent segments (T1,T2) lie adjacent to the long sides of the opaque T-shape. A narrow slit (S) at an angle (alpha) of 45 degrees separates first and second transparent segments at one of the 90 degree angles of the opaque T-shape. The top of the T is bordered by a first transparent segment, followed by a third opaque segment (O3), followed by a second transparent segment. Light passing through the two transparent segments leaves with a phase difference of 180 degrees.