公开(公告)号：DE10310136B4

公开(公告)日：2007-05-03

申请号：DE10310136

申请日：2003-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  HENNIG MARIO ,  PFORR RAINER ,  KOEHLE RODERICK ,  HOFSAES MARKUS ,  THIELE JOERG

IPC: G03F1/00 ,  G03F7/20

Abstract: Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.

公开(公告)号：DE102005015002A1

公开(公告)日：2006-10-05

申请号：DE102005015002

申请日：2005-04-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOFSAES MARKUS ,  SCHNABEL FLORIAN ,  RUF BERNHARD

IPC: G11C29/24 ,  G11C8/02 ,  G11C29/18

Abstract: The method involves assigning an identifier to each fuse of an integrated memory circuit based on a provided net list, and assigning address information to a group of fuses. Position data of the fuses are determined from a layout, generated based on the net list, to determine if the position data are in conjunction with the net list based on the fuse identifiers. Repair position data are produced from the obtained position data of the fuses and repair data from a tester mechanism. The fuses are then programmed using the repair position data to repair the integrated memory circuit. The net list describes the interconnected electronic components and fuses included in the integrated memory circuit. The address information indicates to which redundant storage areas the fuses are designated or assigned. Allocation between the address information and position data of the fuses is determined based on the conjunction relationship of the position data and address information with respect to the net list. The repair position indicates the position of the fuse that can be programmed for repair.

公开(公告)号：DE10310136A1

公开(公告)日：2004-09-16

申请号：DE10310136

申请日：2003-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  HENNIG MARIO ,  PFORR RAINER ,  KOEHLE RODERICK ,  HOFSAES MARKUS ,  THIELE JOERG

IPC: G03F1/00 ,  G03F7/20 ,  G03F1/14

Abstract: Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.

公开(公告)号：DE10129202C1

公开(公告)日：2002-09-26

申请号：DE10129202

申请日：2001-06-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  HEISMEIER MICHAEL ,  HOFSAES MARKUS ,  NOELSCHER CHRISTOPH

IPC: G03F1/00 ,  G03F1/14

Abstract: The mask has a T-shaped structure (10) with first and second opaque segments (O1,O2). The second segment abuts the middle of a long side of the rectangular first segment to form a T-shape. Transparent segments (T1,T2) lie adjacent to the long sides of the opaque T-shape. A narrow slit (S) at an angle (alpha) of 45 degrees separates first and second transparent segments at one of the 90 degree angles of the opaque T-shape. The top of the T is bordered by a first transparent segment, followed by a third opaque segment (O3), followed by a second transparent segment. Light passing through the two transparent segments leaves with a phase difference of 180 degrees.

公开(公告)号：DE102005039394B4

公开(公告)日：2008-08-28

申请号：DE102005039394

申请日：2005-08-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOFSAES MARKUS ,  NASH EVA-MARIA

IPC: G06F17/50 ,  H01L21/768 ,  H01L21/822

Abstract: A layout comprises a plurality of elemental areas which define the shape and arrangement of patterns of an integrated circuit. A method for searching for potential faults in the layout begins with dividing the layout into sections. One of a number of predetermined classes is allocated to a section by means of allocation criteria. An evaluation criterion allocated to the class which was allocated to the section is then applied to the section in order to obtain an evaluation result. Each section is then identified as potentially faulted in dependence on the evaluation result.

公开(公告)号：DE102005039394A1

公开(公告)日：2007-03-01

申请号：DE102005039394

申请日：2005-08-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOFSAES MARKUS ,  NASH EVA-MARIA

IPC: G06F17/50 ,  H01L21/768 ,  H01L21/822

Abstract: A layout comprises a plurality of elemental areas which define the shape and arrangement of patterns of an integrated circuit. A method for searching for potential faults in the layout begins with dividing the layout into sections. One of a number of predetermined classes is allocated to a section by means of allocation criteria. An evaluation criterion allocated to the class which was allocated to the section is then applied to the section in order to obtain an evaluation result. Each section is then identified as potentially faulted in dependence on the evaluation result.

公开(公告)号：DE10119145C1

公开(公告)日：2002-11-21

申请号：DE10119145

申请日：2001-04-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  HEISMEIER MICHAEL ,  HOFSAES MARKUS ,  NOELSCHER CHRISTOPH

IPC: G03F1/00 ,  G03F7/20

Abstract: A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.