Method for manufacturing non-volatile semiconductor memory cell having separate tunnel window
    2.
    发明专利
    Method for manufacturing non-volatile semiconductor memory cell having separate tunnel window 审中-公开
    制造具有分离式隧道窗的非挥发性半导体存储单元的方法

    公开(公告)号:JP2006319362A

    公开(公告)日:2006-11-24

    申请号:JP2006197022

    申请日:2006-07-19

    CPC classification number: H01L29/66825 H01L29/7883

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a non-volatile semiconductor memory cell (SZ) having a separate tunnel window cell (TF).
    SOLUTION: The method includes the step for forming the window cell (TF) having a tunnel zone (TG), a tunnel layer (4), a tunnel window memory layer (T5), a dielectric tunnel window layer (T6), and a tunnel window control electrode layer (T7), and the step for forming a transistor memory cell (TZ) having a channel zone (KG), a gate layer (3), a memory layer (5), a dielectric layer (6), and a control electrode layer (7). By the manufacturing method, the tunnel zone (TG) is formed in a late implantation step by tunnel implantation (I
    T ) using the window cell (TF) as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种制造具有单独的隧道窗口单元(TF)的非易失性半导体存储单元(SZ)的方法。 解决方案:该方法包括用于形成具有隧道区(TG),隧道层(4),隧道窗口存储层(T5),电介质隧道窗口层(T6)的窗口单元(TF) ,和隧道窗口控制电极层(T7),以及用于形成具有沟道区(KG)的晶体管存储单元(TZ),栅极层(3),存储层(5),电介质层 6)和控制电极层(7)。 通过制造方法,使用窗口单元(TF)作为掩模,通过隧道注入(I SB> T SB)在后期注入步骤中形成隧道区(TG)。 所得到的存储单元具有小的面积要求和大量的编程/清除周期。 版权所有(C)2007,JPO&INPIT

    3.
    发明专利
    未知

    公开(公告)号:DE19913365C2

    公开(公告)日:2002-07-18

    申请号:DE19913365

    申请日:1999-03-24

    Abstract: A method and an apparatus for detecting the presence of a work piece in an automatic processing apparatus are described. Previously known detection devices cannot make a clear distinction between the presence and absence of the work piece under all conditions. An apparatus is therefore provided which contains an ultrasound transmitter, an ultrasound receiver and a detection device (controller). The detection as to whether a work piece is held in a holder in the processing apparatus is carried out by irradiating the holder with ultrasound waves, receiving the reflected ultrasound waves and detecting on the basis of the reflected ultrasound waves. The method can be used advantageously in particular in polishing machines for wafers, where the polishing cloth is distinguished considerably, in terms of its acoustic reflection capacity, from the wafer to be polished.

    4.
    发明专利
    未知

    公开(公告)号:DE10037447C2

    公开(公告)日:2002-06-27

    申请号:DE10037447

    申请日:2000-07-26

    Abstract: The electrical characteristic of a microelectronic circuit configuration that has at least one analog electronic unit is set. In a configuration step, by feeding and/or extracting electrical charge, the analog electronic unit is put into a state which permanently determines the analog electrical characteristics of the unit. In particular, the floating gate of an EEPROM cell is charged up to a freely selectable charge value lying within a continuous range.

    6.
    发明专利
    未知

    公开(公告)号:DE59808090D1

    公开(公告)日:2003-05-28

    申请号:DE59808090

    申请日:1998-09-22

    Abstract: A method for forming a trench structure in a silicon substrate, which trench structure serves for electrically insulating a first region of the substrate from a second substrate region. The method proceeds from a growth of a thermal oxide layer on the substrate surface and an application and patterning of a mask layer over the thermal oxide layer. A trench of predetermined depth is subsequently etched into the silicon substrate through the patterned mask layer. The trench is filled by a deposition of a conformal covering oxide layer on the substrate with an essentially uniform thickness that is sufficient for completely filling the trench. Afterwards, a polysilicon layer is deposited on the covering oxide layer and a chemical mechanical planarization method is carried out with high selectivity S between the polysilicon material and the oxide material in order to obtain a flat surface. In a further method step, the layer is additionally removed by an essentially nonselective, joint etching of the polysilicon material and of the oxide material while maintaining a planar surface produced in the preceding planarization step. The etching operation is carried out at least until all the polysilicon material has been removed in a region of the trench.

    9.
    发明专利
    未知

    公开(公告)号:AT224071T

    公开(公告)日:2002-09-15

    申请号:AT00929257

    申请日:2000-03-24

    Abstract: A method and an apparatus for detecting the presence of a work piece in an automatic processing apparatus are described. Previously known detection devices cannot make a clear distinction between the presence and absence of the work piece under all conditions. An apparatus is therefore provided which contains an ultrasound transmitter, an ultrasound receiver and a detection device (controller). The detection as to whether a work piece is held in a holder in the processing apparatus is carried out by irradiating the holder with ultrasound waves, receiving the reflected ultrasound waves and detecting on the basis of the reflected ultrasound waves. The method can be used advantageously in particular in polishing machines for wafers, where the polishing cloth is distinguished considerably, in terms of its acoustic reflection capacity, from the wafer to be polished.

Patent Agency Ranking