Abstract:
PROBLEM TO BE SOLVED: To provide a method of continuously adjusting the analog electric characteristics of the circuit device, that is, selecting electric characteristics out of a continuous range of analog electric characteristics. SOLUTION: Charge is added to or extracted from an analog unit so as to shift it to a prescribed state before or while a circuit device is driven in a configuration step, the analog electric characteristics of the unit are continuously determined, and the circuit device is driven, taking advantage of the electric characteristics.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a non-volatile semiconductor memory cell (SZ) having a separate tunnel window cell (TF). SOLUTION: The method includes the step for forming the window cell (TF) having a tunnel zone (TG), a tunnel layer (4), a tunnel window memory layer (T5), a dielectric tunnel window layer (T6), and a tunnel window control electrode layer (T7), and the step for forming a transistor memory cell (TZ) having a channel zone (KG), a gate layer (3), a memory layer (5), a dielectric layer (6), and a control electrode layer (7). By the manufacturing method, the tunnel zone (TG) is formed in a late implantation step by tunnel implantation (I T ) using the window cell (TF) as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
A method and an apparatus for detecting the presence of a work piece in an automatic processing apparatus are described. Previously known detection devices cannot make a clear distinction between the presence and absence of the work piece under all conditions. An apparatus is therefore provided which contains an ultrasound transmitter, an ultrasound receiver and a detection device (controller). The detection as to whether a work piece is held in a holder in the processing apparatus is carried out by irradiating the holder with ultrasound waves, receiving the reflected ultrasound waves and detecting on the basis of the reflected ultrasound waves. The method can be used advantageously in particular in polishing machines for wafers, where the polishing cloth is distinguished considerably, in terms of its acoustic reflection capacity, from the wafer to be polished.
Abstract:
The electrical characteristic of a microelectronic circuit configuration that has at least one analog electronic unit is set. In a configuration step, by feeding and/or extracting electrical charge, the analog electronic unit is put into a state which permanently determines the analog electrical characteristics of the unit. In particular, the floating gate of an EEPROM cell is charged up to a freely selectable charge value lying within a continuous range.
Abstract:
A method for forming a trench structure in a silicon substrate, which trench structure serves for electrically insulating a first region of the substrate from a second substrate region. The method proceeds from a growth of a thermal oxide layer on the substrate surface and an application and patterning of a mask layer over the thermal oxide layer. A trench of predetermined depth is subsequently etched into the silicon substrate through the patterned mask layer. The trench is filled by a deposition of a conformal covering oxide layer on the substrate with an essentially uniform thickness that is sufficient for completely filling the trench. Afterwards, a polysilicon layer is deposited on the covering oxide layer and a chemical mechanical planarization method is carried out with high selectivity S between the polysilicon material and the oxide material in order to obtain a flat surface. In a further method step, the layer is additionally removed by an essentially nonselective, joint etching of the polysilicon material and of the oxide material while maintaining a planar surface produced in the preceding planarization step. The etching operation is carried out at least until all the polysilicon material has been removed in a region of the trench.
Abstract:
A method for producing a non-volatile semiconductor memory cell with a separate tunnel window cell includes the step of forming a tunnel zone in a late implantation step by performing a tunnel implantation with the aid of a tunnel window cell as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.
Abstract:
A method and an apparatus for detecting the presence of a work piece in an automatic processing apparatus are described. Previously known detection devices cannot make a clear distinction between the presence and absence of the work piece under all conditions. An apparatus is therefore provided which contains an ultrasound transmitter, an ultrasound receiver and a detection device (controller). The detection as to whether a work piece is held in a holder in the processing apparatus is carried out by irradiating the holder with ultrasound waves, receiving the reflected ultrasound waves and detecting on the basis of the reflected ultrasound waves. The method can be used advantageously in particular in polishing machines for wafers, where the polishing cloth is distinguished considerably, in terms of its acoustic reflection capacity, from the wafer to be polished.