公开(公告)号：JP2006319362A

公开(公告)日：2006-11-24

申请号：JP2006197022

申请日：2006-07-19

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： WAWER PETER ,  SPRINGMANN OLIVER ,  WOLF KONRAD ,  HEITZSCH OLAF ,  HUCKELS KAI ,  RENNEKAMP REINHOLD ,  ROEHRICH MAYK ,  STEIN VON KAMIENSKI ELARD ,  KUTTER CHRISTOPH ,  LUDWIG CHRISTOPH

IPC: H01L21/8247 ,  H01L21/336 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L29/66825 ,  H01L29/7883

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a non-volatile semiconductor memory cell (SZ) having a separate tunnel window cell (TF).
SOLUTION: The method includes the step for forming the window cell (TF) having a tunnel zone (TG), a tunnel layer (4), a tunnel window memory layer (T5), a dielectric tunnel window layer (T6), and a tunnel window control electrode layer (T7), and the step for forming a transistor memory cell (TZ) having a channel zone (KG), a gate layer (3), a memory layer (5), a dielectric layer (6), and a control electrode layer (7). By the manufacturing method, the tunnel zone (TG) is formed in a late implantation step by tunnel implantation (I
T ) using the window cell (TF) as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造具有单独的隧道窗口单元（TF）的非易失性半导体存储单元（SZ）的方法。 解决方案：该方法包括用于形成具有隧道区（TG），隧道层（4），隧道窗口存储层（T5），电介质隧道窗口层（T6）的窗口单元（TF） ，和隧道窗口控制电极层（T7），以及用于形成具有沟道区（KG）的晶体管存储单元（TZ），栅极层（3），存储层（5），电介质层 6）和控制电极层（7）。 通过制造方法，使用窗口单元（TF）作为掩模，通过隧道注入（I SB> T SB）在后期注入步骤中形成隧道区（TG）。 所得到的存储单元具有小的面积要求和大量的编程/清除周期。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：DE10123362A1

公开(公告)日：2002-11-28

申请号：DE10123362

申请日：2001-05-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ABDUL-HAK AYAD ,  CASPARY DIRK ,  GRATZ ACHIM ,  HAIBACH PATRICK ,  KAMIENSKI ELARD STEIN VON ,  KUTTER CHRISTOPH

IPC: G01R31/3185 ,  H01L23/544 ,  H01L21/66

Abstract: The device has electronic chips and a memory device with a stored classification map with position and classification information for at least one part of the chip. The position information gives the position of each chip on the wafer and the classification information gives a classification of each chip in accordance with a given criterion. An Independent claim is also included for a wafer manufacturing method.

公开(公告)号：DE10034004A1

公开(公告)日：2002-02-07

申请号：DE10034004

申请日：2000-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUTTER CHRISTOPH ,  LUDWIG CHRISTOPH ,  STEIN VON KAMIENSKI ELARD ,  WAWER PETER

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L27/115 ,  H01L21/8247

Abstract: A non-volatile semiconductor storage cell comprises an active region (AA) formed by insulating regions (STI) in a semiconductor substrate (1); and a succession of layers comprising a storage layer (FG), a dielectric layer (DS) and a control layer (CG) formed on the surface of the substrate. At least one part of the overlapping regions of the active region and the succession of layers forms a tunnel window region with a tunnel layer (TS). The active region has a sharp edge (K) on the surface of the tunnel layer in the tunnel window region. An Independent claim is also included for the production of the non-volatile semiconductor storage cell. Preferred Features: The sharp edge is formed on a transition to the insulating region. The insulating regions have flat trench insulations.

公开(公告)号：DE19929619C2

公开(公告)日：2001-06-28

申请号：DE19929619

申请日：1999-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WAWER PETER ,  HEITZSCH OLAF ,  ROEHRICH MAYK ,  SPRINGMANN OLIVER ,  HUCKELS KAI ,  STEIN VON KAMIENSKI ELARD ,  WOLF KONRAD ,  RENNEKAMP REINHOLD ,  KUTTER CHRISTOPH ,  LUDWIG CHRISTOPH

IPC: H01L27/115 ,  G11C16/06

公开(公告)号：DE19955602A1

公开(公告)日：2001-05-31

申请号：DE19955602

申请日：1999-11-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LUDWIG CHRISTOPH ,  KUTTER CHRISTOPH ,  WAWER PETER ,  STEIN VON KAMIENSKI ELARD

IPC: H01L21/8246 ,  H01L21/8247 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/51 ,  H01L29/792

Abstract: The invention relates to a non-volatile semiconductor memory location comprising a semiconductor substrate (1), a first insulating layer (3), a charge-storing layer (4), a second insulating layer (5), and a control layer (6). The invention also relates to a corresponding production method according to which, in order to improve the temperature properties, the charge-storing layer (4) is constructed by a dielectric having a low energy gap.

公开(公告)号：DE19840984B4

公开(公告)日：2005-05-19

申请号：DE19840984

申请日：1998-09-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LUDWIG CHRISTOPH ,  KUTTER CHRISTOPH ,  WOLF KONRAD ,  HEITZSCH OLAF ,  HUCKELS KAI ,  RENNEKAMP REINHOLD ,  ROEHRICH MAYK ,  STEIN VON KAMIENSKI ELARD ,  WAWER PETER ,  SPRINGMANN OLIVER

IPC: H01L21/8247 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11521 ,  H01L29/423 ,  H01L29/78 ,  H01L21/336

公开(公告)号：DE10108923C1

公开(公告)日：2002-08-08

申请号：DE10108923

申请日：2001-02-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ABDUL-HAK AYAD ,  CASPARY DIRK ,  GRATZ ACHIM ,  HAIBACH PATRICK ,  KAMIENSKI ELARD STEIN VON ,  KUTTER CHRISTOPH

IPC: H01L21/762 ,  H01L29/78 ,  H01L21/336

公开(公告)号：DE19929675A1

公开(公告)日：2001-04-12

申请号：DE19929675

申请日：1999-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WAWER PETER ,  HEITZSCH OLAF ,  ROEHRICH MAYK ,  SPRINGMANN OLIVER ,  HUCKELS KAI ,  STEIN VON KAMIENSKI ELARD ,  WOLF KONRAD ,  RENNEKAMP REINHOLD ,  KUTTER CHRISTOPH ,  LUDWIG CHRISTOPH

IPC: H01L21/8246

公开(公告)号：DE19930586B4

公开(公告)日：2007-12-27

申请号：DE19930586

申请日：1999-07-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WAWER PETER ,  SPRINGMANN OLIVER ,  WOLF KONRAD ,  HEITZSCH OLAF ,  HUCKELS KAI ,  RENNEKAMP REINHOLD ,  ROEHRICH MAYK ,  STEIN VON KAMIENSKI ELARD ,  KUTTER CHRISTOPH ,  LUDWIG CHRISTOPH

IPC: H01L27/115 ,  G11C16/02 ,  H01L21/8247 ,  H01L27/11519 ,  H01L27/11521 ,  H01L29/788

公开(公告)号：DE19929618B4

公开(公告)日：2006-07-13

申请号：DE19929618

申请日：1999-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WAWER PETER ,  HEITZSCH OLAF ,  ROEHRICH MAYK ,  SPRINGMANN OLIVER ,  HUCKELS KAI ,  STEIN VON KAMIENSKI ELARD ,  WOLF KONRAD ,  RENNEKAMP REINHOLD ,  KUTTER CHRISTOPH ,  LUDWIG CHRISTOPH

IPC: H01L21/8247 ,  H01L21/336 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: A method for producing a non-volatile semiconductor memory cell with a separate tunnel window cell includes the step of forming a tunnel zone in a late implantation step by performing a tunnel implantation with the aid of a tunnel window cell as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.