公开(公告)号：DE102004025203A1

公开(公告)日：2005-12-15

申请号：DE102004025203

申请日：2004-05-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS ,  PFORR RAINER ,  LAESSIG ANTJE ,  ELIAN KLAUS ,  HENNIG MARIO ,  NOELSCHER CHRISTOPH ,  KOESTLER WOLFRAM

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38

Abstract: Photolithographic production of a photomask by the standard steps of coating the substrate with a photolacquer, heating for solvent removal, illumination, heating and finally developing with a basic medium is such that the photolacquer is coated with an acid at a stage between the solvent removal and the final development step.

公开(公告)号：DE10154981A1

公开(公告)日：2003-05-15

申请号：DE10154981

申请日：2001-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRAUSE GERD ,  TRINOWITZ REINER ,  LAESSIG ANTJE ,  LANGNICKEL HEIKE ,  FROEHLICH HANS-GEORG ,  KOWALEWSKI JOHANNES ,  GOETSCHKES UDO ,  HUEBINGER FRANK

IPC: H01L23/544 ,  H01L21/8242

Abstract: A mark configuration for the alignment and/or determination of a relative position of at least two planes in relation to one another in a substrate and/or in layers on a substrate during lithographic exposure, in particular, in the case of a wafer during the production of DRAMs, includes a mark structure, and at least one layer of a definable thickness underneath the mark structure for adjusting the physical position of the mark structure relative to a reference plane in or on the substrate. Also provided is a wafer having such a configuration and a process for providing such a configuration. The invention allows a mark configuration to have mark structures exhibiting good contrast regardless of the design or the process conditions.