公开(公告)号：WO03050885A3

公开(公告)日：2003-09-04

申请号：PCT/EP0213138

申请日：2002-11-22

Applicant: INFINEON TECHNOLOGIES AG ,  AHRENS CARSTEN ,  HARTUNG WOLFGANG ,  HEUERMANN HOLGER ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

Inventor： AHRENS CARSTEN ,  HARTUNG WOLFGANG ,  HEUERMANN HOLGER ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

IPC: H01L27/06 ,  H01L29/417 ,  H01L29/868

CPC classification number: H01L29/417 ,  H01L27/0676 ,  H01L29/868

Abstract: The invention concerns a diode circuit having a PIN structure (10), the semiconductor N being an embedded layer (32) whereon the region I (34) is deposited by epitaxial deposit, and an intermediate layer (P) (36) being introduced into the epitaxial layer. A metallization (38) of the semiconductor layer P and a metallization (44, 46) of the semiconductor layer N (32) are located on the same main surface of the semiconductor substrate (20) such that it is possible to incorporate comprising an integrated capacitor (14), and integrated resistor (12) and/or an integrated inductor (16).

Abstract translation: 二极管电路包括PIN二极管结构10，其中，所述n型半导体层是掩埋层32，其上的i区域34通过外延施加，并且其中，在所述外延层的p型半导体层被引入第36 在p型半导体层和n型半导体层32的触点44，46的触点38被布置在半导体基板20的同一主表面上，因此与一体的冷凝器14，一个集成的电阻器12和/或整合 集成电感器16是可能的。

公开(公告)号：WO02069618A3

公开(公告)日：2002-10-24

申请号：PCT/DE0200708

申请日：2002-02-28

Applicant: INFINEON TECHNOLOGIES AG ,  PETZ MARTIN ,  STADLER BERND ,  PAULUS STEFAN ,  SCHROEDER MARTIN ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

Inventor： PETZ MARTIN ,  STADLER BERND ,  PAULUS STEFAN ,  SCHROEDER MARTIN ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

IPC: H01L31/0203 ,  H01L31/0232 ,  H04N5/225 ,  H01L27/146

CPC classification number: H04N5/2257 ,  H01L24/97 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14683 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H04N5/2254 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The invention relates to a digital camera (1) comprising a lens (2), a camera housing (3) and a semiconductor sensor (9), whereby the camera housing (3) is essentially comprised of a transparent plastic block (44), which encloses, only on its underside, a semiconductor sensor (9) and comprises, on its upper side, an adapted lens (2). A layer, which is situated between the semiconductor sensor and the lens, which is impervious to light, and which has an aperture (14), improves the image quality. The invention also relates to a method for producing a digital camera of the aforementioned type.

Abstract translation: 本发明涉及一种数码相机（1）与透镜（2），一个摄像机壳体（3）和半导体传感器（9），其中所述摄像机壳（3）基本上由一个透明的塑料块（44），其中仅在其下侧 包括半导体传感器（9）和在其上侧的适配透镜（2），而具有孔（14）的不透明层之间改进了图像质量。 此外，本发明涉及一种用于制造这样的数字照相机的方法。

公开(公告)号：DE102009033085A1

公开(公告)日：2011-01-27

申请号：DE102009033085

申请日：2009-07-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHAFFER JOSEF-PAUL

IPC: H03M7/30

Abstract: Eine Schaltungsanordnung (100, 300) umfasst eine Eingangsschaltung (102, 302) zum Einlesen eines seriellen Datenstroms, der eine Mehrzahl von Nutzdatenbits umfasst, und zum Einlesen einer Information, die den Beginn des seriellen Datenstroms anzeigt. Die Schaltungsanordnung (100, 300) umfasst weiterhin eine Datenverarbeitungsschaltung (104, 304) zum Entfernen mindestens eines Nutzdatenbits aus dem eingelesenen, seriellen Datenstrom. Die Datenverarbeitungsschaltung ist derart ausgestaltet, dass sie das mindestens eine Nutzdatenbit an einer vorgegebenen Position nach dem Beginn des seriellen Datenstroms entfernt. Die Schaltungsanordnung (100, 300) umfasst weiterhin eine erste Ausgangsschaltung (106, 306) zum Ausgeben des eingelesenen, seriellen Datenstroms unter Auslassung des mindestens einen entfernten Nutzdatenbits.

公开(公告)号：AT247877T

公开(公告)日：2003-09-15

申请号：AT01902369

申请日：2001-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHAFFER JOSEF-PAUL

IPC: H03F1/02 ,  H03F1/30 ,  H03F3/195

Abstract: The circuit has connections (23,25) for first and second supply potentials, a measurement connection (24) for connection to a measurement resistance (3) in series with the load current path of a HF transistor (1), an output connection (256) for coupling to the transistor's control connection, a differencing element (20) with connections to the supply potentials and signal inputs connected to a reference potential (21) and the measurement connection (24) and a current source (22) controlled by a differencing element and connected to the output connection.

公开(公告)号：DE50100529D1

公开(公告)日：2003-09-25

申请号：DE50100529

申请日：2001-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHAFFER JOSEF-PAUL

IPC: H03F1/02 ,  H03F1/30 ,  H03F3/195

Abstract: The circuit has connections (23,25) for first and second supply potentials, a measurement connection (24) for connection to a measurement resistance (3) in series with the load current path of a HF transistor (1), an output connection (256) for coupling to the transistor's control connection, a differencing element (20) with connections to the supply potentials and signal inputs connected to a reference potential (21) and the measurement connection (24) and a current source (22) controlled by a differencing element and connected to the output connection.

公开(公告)号：AU2002363857A1

公开(公告)日：2003-06-23

申请号：AU2002363857

申请日：2002-11-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHRENS CARSTEN ,  HARTUNG WOLFGANG ,  HEUERMANN HOLGER ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

IPC: H01L27/06 ,  H01L29/417 ,  H01L29/868

Abstract: A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.

公开(公告)号：DE50211166D1

公开(公告)日：2007-12-20

申请号：DE50211166

申请日：2002-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PETZ MARTIN ,  STADLER BERND ,  PAULUS STEFAN ,  SCHROEDER MARTIN ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

IPC: H01L31/0203 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/225

Abstract: A digital camera has a lens, a camera housing, and a semiconductor sensor. The camera housing is primarily formed of a transparent plastic block that encloses a semiconductor sensor only on its underside and has an adapted lens on its top side. Between the two there is provided an opaque layer with an aperture that improves the image quality. The invention also relates to a method for producing such a digital camera.

公开(公告)号：DE59811301D1

公开(公告)日：2004-06-09

申请号：DE59811301

申请日：1998-02-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHAFFER JOSEF-PAUL

IPC: H01P1/15 ,  H04B1/403 ,  H04B1/44 ,  H04B1/48

Abstract: The system has connections (S1,S2) for receiving two different frequency bands (f1,f2). A connection (A) for an antenna and a pair of on-off switching units (SE1,SE2) are provided. The antenna is connected via a line section (SL1) to a second section (SL2) which are provided for the two different frequencies. The line sections are provided for the frequency band f2 and present serially for the first frequency band f1 a lambda-quarter-line. Ideally the second frequency band is twice that of the first. Output is made via transmitters (E1,E2).

公开(公告)号：DE10109787A1

公开(公告)日：2002-10-02

申请号：DE10109787

申请日：2001-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PETZ MARTIN ,  STADLER BERND ,  PAULUS STEFAN ,  SCHROEDER MARTIN ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

IPC: H01L31/0203 ,  H01L31/0232 ,  H04N5/225 ,  G03B17/00 ,  G03B19/00 ,  H04N1/00

Abstract: A digital camera has a lens, a camera housing, and a semiconductor sensor. The camera housing is primarily formed of a transparent plastic block that encloses a semiconductor sensor only on its underside and has an adapted lens on its top side. Between the two there is provided an opaque layer with an aperture that improves the image quality. The invention also relates to a method for producing such a digital camera.

公开(公告)号：DE102015118829A1

公开(公告)日：2016-05-04

申请号：DE102015118829

申请日：2015-11-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ARCIONI FRANCESKA ,  BETTINESCHI GABRIELE ,  GLAS ALEXANDER ,  SCHAFFER JOSEF-PAUL ,  WERTHMANN HUBERT ,  WOJNOWSKI MACIEJ

IPC: H04B3/02

Abstract: Ein Gleichtakt-Unterdrücker zum Beseitigen von Gleichtakt-Rauschen in Differential-Hochfrequenz-Datenübertragungssystemen und eine zugeordnetes Verfahren beinhalten eine lange gewickelte Differential-Übertagungsleitung, die dazu konfiguriert ist, Daten zwischen einer Quelle und einer Last zu übertragen. Die Differential-Übertagungsleitung umfasst einen ersten leitenden Draht und einen zweiten leitenden Draht, die induktiv und kapazitiv miteinander gekoppelt sind und die lateral aufeinander ausgerichtet oder vertikal aufeinander ausgerichtet sind. Ferner ist die Differential-Übertragungsleitung für Differential-Signale angepasst und für Gleichtakt-Rauschen fehlangepasst.