公开(公告)号：WO03050885A3

公开(公告)日：2003-09-04

申请号：PCT/EP0213138

申请日：2002-11-22

Applicant: INFINEON TECHNOLOGIES AG ,  AHRENS CARSTEN ,  HARTUNG WOLFGANG ,  HEUERMANN HOLGER ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

Inventor： AHRENS CARSTEN ,  HARTUNG WOLFGANG ,  HEUERMANN HOLGER ,  LOSEHAND REINHARD ,  SCHAFFER JOSEF-PAUL

IPC: H01L27/06 ,  H01L29/417 ,  H01L29/868

CPC classification number: H01L29/417 ,  H01L27/0676 ,  H01L29/868

Abstract: The invention concerns a diode circuit having a PIN structure (10), the semiconductor N being an embedded layer (32) whereon the region I (34) is deposited by epitaxial deposit, and an intermediate layer (P) (36) being introduced into the epitaxial layer. A metallization (38) of the semiconductor layer P and a metallization (44, 46) of the semiconductor layer N (32) are located on the same main surface of the semiconductor substrate (20) such that it is possible to incorporate comprising an integrated capacitor (14), and integrated resistor (12) and/or an integrated inductor (16).

Abstract translation: 二极管电路包括PIN二极管结构10，其中，所述n型半导体层是掩埋层32，其上的i区域34通过外延施加，并且其中，在所述外延层的p型半导体层被引入第36 在p型半导体层和n型半导体层32的触点44，46的触点38被布置在半导体基板20的同一主表面上，因此与一体的冷凝器14，一个集成的电阻器12和/或整合 集成电感器16是可能的。

公开(公告)号：DE50209602D1

公开(公告)日：2007-04-12

申请号：DE50209602

申请日：2002-07-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHRENS CARSTEN ,  BARTL ULF ,  HARTUNG WOLFGANG ,  LOSEHAND REINHARD ,  WERTHMANN HUBERT

IPC: H01F17/00 ,  H01F41/04 ,  H01L23/522 ,  H01L23/64

Abstract: The magnetic component uses at least two different layers of magnetic material for carrying and amplifying the magnetic flux. The use of two different layers which may, however, have the same material composition allows the magnetic conductors to form a magnetic circuit with a locally matched domain alignment. The magnetic component accordingly allows considerable improvements to be achieved in the component parameter, in particular a considerable increase in the Q-factor.

公开(公告)号：DE10158798A1

公开(公告)日：2003-06-18

申请号：DE10158798

申请日：2001-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTUNG WOLFGANG ,  RUEGEMER ANGELIKA ,  HERZUM CHRISTIAN ,  AHRENS CARSTEN ,  LOSEHAND REINHARD

IPC: H01L21/334 ,  H01L29/94 ,  H01L27/08

Abstract: A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

公开(公告)号：DE10330838B4

公开(公告)日：2005-08-25

申请号：DE10330838

申请日：2003-07-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHRENS CARSTEN ,  POMPL STEFAN ,  BARTL ULF ,  WERTHMANN HUBERT ,  HARTUNG WOLFGANG ,  PEICHL RAIMUND ,  EISENER BERND ,  HERZUM CHRISTIAN

IPC: H01L21/329 ,  H01L29/417 ,  H01L29/872

Abstract: An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

公开(公告)号：DE10330838A1

公开(公告)日：2005-02-10

申请号：DE10330838

申请日：2003-07-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHRENS CARSTEN ,  POMPL STEFAN ,  BARTL ULF ,  WERTHMANN HUBERT ,  HARTUNG WOLFGANG ,  PEICHL RAIMUND ,  EISENER BERND ,  HERZUM CHRISTIAN

IPC: H01L21/329 ,  H01L29/417 ,  H01L29/872

Abstract: An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

公开(公告)号：AU2002356602A1

公开(公告)日：2003-06-10

申请号：AU2002356602

申请日：2002-11-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LOSEHAND REINHARD ,  RUEGEMER ANGELIKA ,  AHRENS CARSTEN ,  HARTUNG WOLFGANG ,  HERZUM CHRISTIAN

IPC: H01L21/334 ,  H01L29/94

Abstract: A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

公开(公告)号：DE102004063497A1

公开(公告)日：2005-08-11

申请号：DE102004063497

申请日：2004-12-24

Applicant: INFINEON TECHNOLOGIES AG ,  LEIBNIZ INST FUER FESTKOERPER ,  CAESAR STIFTUNG

Inventor： QUANDT ECKHARD ,  FROMMBERGER MICHAEL ,  TEWES MICHAEL ,  HARTUNG WOLFGANG ,  LOSEHAND REINHARD ,  MCCORD GEOFFREY

IPC: G01L1/12 ,  H01F10/08 ,  H01F10/26 ,  H01F17/06 ,  H01L41/00 ,  H01F3/02 ,  G01B7/24 ,  G01L9/16 ,  H01L41/06

Abstract: A magnetic element, especially a core or yoke, in which the element has an anisotropic thin magnetic layer, especially of a thickness of less than 0.1 mm. The thin layer has at least two discrete layers arranged one over the other, where the individual layers are each magnetically anisotropic and the easy magnetic axes of anisotropy each point in different directions. Independent claims are included for the following (1) a coil on a substrate; (2) a toroid with a magnetic element; (3) a sensor with magnetic element.

公开(公告)号：DE10160829A1

公开(公告)日：2003-06-26

申请号：DE10160829

申请日：2001-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTUNG WOLFGANG ,  HEUERMANN HOLGER ,  LOSEHAND REINHARD ,  AHRENS CARSTEN

IPC: H01L27/06 ,  H01L29/417 ,  H01L29/868 ,  H01L27/04

Abstract: The invention concerns a diode circuit having a PIN structure (10), the semiconductor N being an embedded layer (32) whereon the region I (34) is deposited by epitaxial deposit, and an intermediate layer (P) (36) being introduced into the epitaxial layer. A metallization (38) of the semiconductor layer P and a metallization (44, 46) of the semiconductor layer N (32) are located on the same main surface of the semiconductor substrate (20) such that it is possible to incorporate comprising an integrated capacitor (14), and integrated resistor (12) and/or an integrated inductor (16).

公开(公告)号：DE102007019811A1

公开(公告)日：2008-11-06

申请号：DE102007019811

申请日：2007-04-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GLAS ALEXANDER ,  HARTUNG WOLFGANG ,  SCHRENK MICHAEL ,  KLEIN WOLFGANG ,  KEBINGER HERBERT

IPC: H01L27/06 ,  H01L23/488 ,  H01L23/60 ,  H03H7/01

Abstract: The circuit (100) has a contact (110) for electrically attaching a circuit, and a coil, which is arranged around the contact. An inner lying coil connection (122) of the coil (120) is arranged, and is electrically coupled with the contact. A circuit element is provided, where the coil is arranged around the circuit element, and a connection of the circuit element is electrically coupled with the contact. The connection forms the contact of the circuit element. An independent claim is also included for a chip integrated filter circuit.

公开(公告)号：DE10311059A1

公开(公告)日：2004-10-07

申请号：DE10311059

申请日：2003-03-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHRENS CARSTEN ,  EISENER BERND ,  HARTUNG WOLFGANG ,  HERZUM CHRISTIAN

IPC: H01L21/329 ,  H01L21/762 ,  H01L29/868 ,  H01Q1/38 ,  H01Q1/00

Abstract: Process for preparation of a semiconductor structure with troughs arranged in regions of different electrical conductivity comprises: substrate preparation, application of a first masking layer, etching of troughs, filling of these with an oxide layer, application and structuring of a second masking layer, removal of the oxide layer, removal of the second masking layer, and doping of the region surrounding the region not coated with the second masking layer. Independent claims are included for: (1) a semiconductor integrated circuit consisting of at least one PIN-diode (21) and a capacitor (23); (2) an antenna switch (20) consisting of at least one resistor (22), an inductance (24), a capacitor (23), and a PIN-diode; (3) a process for production of a PIN-diode.