公开(公告)号：DE60122872D1

公开(公告)日：2006-10-19

申请号：DE60122872

申请日：2001-05-02

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： WANG YUN-YU ,  JAMMY RAJARAO ,  KIMBALL J ,  KOTECKI E ,  LIAN JENNY ,  LIN CHENTING ,  MILLER A ,  NAGEL NICOLAS ,  SHEN HUA ,  WILDMAN S

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/8242

Abstract: A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

公开(公告)号：DE102004016963A1

公开(公告)日：2004-11-18

申请号：DE102004016963

申请日：2004-04-06

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： WISE MICHAEL ,  LIMB YOUNG ,  WONG KWONG HON ,  LIAN JENNY ,  NAGEL NICOLAS

IPC: B32B9/04 ,  B32B15/04 ,  H01L21/02 ,  H01L21/8239 ,  H01L21/8242

Abstract: Si, Al, Al plus TiN, and IrO2 are used as adhesion layers to prevent peeling of noble metal electrodes, such as Pt, from a silicon dioxide (SiO 2 ) substrate in capacitor structures of memory devices.

公开(公告)号：WO2004059728A2

公开(公告)日：2004-07-15

申请号：PCT/EP0314415

申请日：2003-12-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRUCHHAUS RAINER ,  GERNHARDT STEFAN ,  HILLIGER ANDREAS ,  LIAN JINGYU ,  NAGEL NICOLAS ,  WELLHAUSEN UWE

IPC: H01L21/8246 ,  H01L23/00 ,  H01L21/02 ,  H01L21/8239 ,  H01L27/105

CPC classification number: H01L27/11502 ,  H01L23/562 ,  H01L27/11507 ,  H01L27/1159 ,  H01L29/7842 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2924/00

Abstract: A semiconductor chip in which stress on the effective stress on the substrate is reduced in order to reduce bowing. To reduce the effective stress, a stress compensation layer is provided on the backside of the chip. The stress compensating layer produces a stress opposite of that produced by the IC. Thus the overall or effective stress on the substrate is reduced.

Abstract translation: 为了减少弯曲，半导体芯片减小了对基板上的有效应力的应力。 为了降低有效应力，在芯片的背面设置应力补偿层。 应力补偿层产生与IC产生的应力相反的应力。 因此，降低了基板上的整体或有效应力。

公开(公告)号：WO2004051743A2

公开(公告)日：2004-06-17

申请号：PCT/EP0313411

申请日：2003-11-28

Applicant: INFINEON TECHNOLOGIES AG ,  WELLHAUSEN UWE ,  NAGEL NICOLAS ,  BRUCHHAUS RAINER ,  GERNHARDT STEFAN

Inventor： WELLHAUSEN UWE ,  NAGEL NICOLAS ,  BRUCHHAUS RAINER ,  GERNHARDT STEFAN

IPC: G06F1/04 ,  H01L21/02 ,  H01L23/00 ,  H01L23/552 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L23/552 ,  H01L27/11502 ,  H01L28/57 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Reduced radiation damage to an IC feature is disclosed. At least a portion of the feature which is sensitive to radiation is covered by a radiation protection layer. The radiation protection layer protects the feature from being damaged to radiation during, for example, processing of the IC. In one embodiment, the radiation protection layer comprises a noble metal, oxides, alloys, or compounds thereof.

Abstract translation: 公开了降低对IC特征的辐射损伤。 对辐射敏感的特征的至少一部分被辐射防护层覆盖。 辐射防护层在例如IC的处理期间保护特征不被辐射损坏。 在一个实施例中，辐射防护层包括贵金属，氧化物，合金或其化合物。

公开(公告)号：WO2004068539A3

公开(公告)日：2005-02-10

申请号：PCT/SG2004000018

申请日：2004-01-19

Applicant: INFINEON TECHNOLOGIES AG ,  TOSHIBA KK ,  ZHUANG HAOREN ,  EGGER ULRICH ,  TOMIOKA KAZUHIRO ,  LIAN JINGYU ,  NAGEL NICOLAS ,  HILLIGER ANDREAS ,  BEITEL GERHARD

Inventor： ZHUANG HAOREN ,  EGGER ULRICH ,  TOMIOKA KAZUHIRO ,  LIAN JINGYU ,  NAGEL NICOLAS ,  HILLIGER ANDREAS ,  BEITEL GERHARD

IPC: H01L20060101 ,  H01L21/02 ,  H01L21/311 ,  H01L21/8246 ,  H05K5/00

CPC classification number: H01L28/55 ,  H01L21/31116 ,  H01L28/57

Abstract: The present invention provides a sidewall oxygen diffusion barrier and method for fabricating the sidewall oxygen diffusion barrier to reduce the diffusion of oxygen to contact plugs during CW hole reactive ion etch processing of a ferroelectric capacitor of an FeRAM device. In one embodiment the sidewall barrier is formed from a substrate fence, while in another embodiment the sidewall barrier is formed by etching back an oxygen barrier.

Abstract translation: 本发明提供一种侧壁氧扩散阻挡层和用于制造侧壁氧扩散阻挡层的方法，以在FeRAM器件的铁电电容器的CW孔反应离子蚀刻处理期间减少氧气对接触插塞的扩散。 在一个实施例中，侧壁屏障由衬底栅栏形成，而在另一个实施例中，通过蚀刻回氧屏障来形成侧壁屏障。

公开(公告)号：WO2004027841A3

公开(公告)日：2004-08-12

申请号：PCT/EP0310117

申请日：2003-09-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEITEL GERHARD ,  HILLIGER ANDREAS ,  MOON BUM-KI ,  NAGEL NICOLAS

IPC: H01G4/228 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/115

CPC classification number: H01L27/11502 ,  H01L21/76895 ,  H01L27/11507 ,  H01L28/60

Abstract: A capacitor with improved reliability is disclosed. The capacitor includes a bottom electrode, a top electrode, and an intermediate layer therebetween. A contact, which is electrically coupled to the top electrode, is provided. At least a portion of the contact is offset from the capacitor. By offsetting the contact from the top electrode, the etch damage to the top electrode is reduced, thereby reducing or eliminating the need for the anneal to repair the etch damage.

Abstract translation: 公开了具有可靠性提高的电容器。 电容器包括底部电极，顶部电极和它们之间的中间层。 提供了电耦合到顶部电极的触点。 触点的至少一部分偏离电容器。 通过抵消与顶部电极的接触，对顶部电极的蚀刻损伤减小，从而减少或消除了退火以修复蚀刻损伤的需要。

公开(公告)号：WO03092051A2

公开(公告)日：2003-11-06

申请号：PCT/EP0304079

申请日：2003-04-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEITEL GERHARD-ADOLF ,  NAGEL NICOLAS ,  MOON BUM-KI

IPC: H01L27/105 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108 ,  H01L27/115

CPC classification number: H01L28/55 ,  H01L27/11502

Abstract: An improved barrier stack for reducing plug oxidation in capacitor-over-plug structures is disclosed. The barrier stack is formed on a non-conductive adhesion layer of titanium oxide. The barrier stack includes first and second barrier layers wherein the second barrier layer covers the top surface and sidewalls of the first barrier layer. In one embodiment, the first barrier layer comprises Ir and the second barrier layer comprises IrOx. Above the barrier stack is formed a capacitor.

Abstract translation: 公开了一种用于减少电容器插头结构中的插塞氧化的改进的阻挡层。 势垒堆叠形成在氧化钛的非导电性粘合层上。 势垒堆叠包括第一和第二阻挡层，其中第二阻挡层覆盖第一阻挡层的顶表面和侧壁。 在一个实施例中，第一阻挡层包括Ir，第二阻挡层包含IrOx。 势垒叠层上方形成电容器。

公开(公告)号：DE10131626B4

公开(公告)日：2006-07-27

申请号：DE10131626

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENKE MATTHIAS ,  BRUCHHAUS RAINER ,  ENDERS GERHARD ,  HARTNER WALTER ,  MIKOLAJICK THOMAS ,  NAGEL NICOLAS ,  ROEHNER MICHAEL

IPC: H01L21/8239 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507

公开(公告)号：DE10393793T5

公开(公告)日：2005-10-20

申请号：DE10393793

申请日：2003-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GERNHARDT STEFAN ,  NAGEL NICOLAS ,  WELLHAUSEN UWE ,  BRUCHHAUS RAINER

IPC: G06F1/04 ,  H01L21/02 ,  H01L23/00 ,  H01L23/552 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

Abstract: Reduced radiation damage to an IC feature is disclosed. At least a portion of the feature which is sensitive to radiation is covered by a radiation protection layer. The radiation protection layer protects the feature from being damaged to radiation during, for example, processing of the IC. In one embodiment, the radiation protection layer comprises a noble metal, oxides, alloys, or compounds thereof.

公开(公告)号：AU2003294742A8

公开(公告)日：2004-06-23

申请号：AU2003294742

申请日：2003-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GERNHARDT STEFAN ,  NAGEL NICOLAS ,  WELLHAUSEN UWE ,  BRUCHHAUS RAINER

IPC: G06F1/04 ,  H01L21/02 ,  H01L23/00 ,  H01L23/552 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

Abstract: Reduced radiation damage to an IC feature is disclosed. At least a portion of the feature which is sensitive to radiation is covered by a radiation protection layer. The radiation protection layer protects the feature from being damaged to radiation during, for example, processing of the IC. In one embodiment, the radiation protection layer comprises a noble metal, oxides, alloys, or compounds thereof.